Backside Nickel Based Ohmic Contacts to n-Type Silicon Carbide
2008 ◽
Vol 600-603
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pp. 635-638
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Keyword(s):
This work focuses on Ni ohmic contacts to the C-face (backside) of n-type 4H-SiC substrates. Low-resistive ohmic contacts to the wafer backside are important especially for vertical power devices. Ni contacts were deposited using E-beam evaporation and annealed at different temperatures (700-1050 °C) in RTP to obtain optimum conditions for forming low resistive ohmic contacts. Our results indicate that 1 min annealing at temperatures between 950 and 1000 °C provides high quality ohmic contacts with a contact resistivity of 2.3x10-5 Ωcm2. Also our XRD results show that different Ni silicide phases appear in this annealing temperature range.
2011 ◽
Vol 679-680
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pp. 465-468
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Keyword(s):
2015 ◽
Vol 191
◽
pp. 57-65
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2000 ◽
Vol 338-342
◽
pp. 1001-1004
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Keyword(s):
2020 ◽
Vol 25
(6)
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pp. 483-396
Keyword(s):
2002 ◽
Vol 31
(5)
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pp. 506-511
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2005 ◽
Vol 23
(6)
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pp. 2530
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Keyword(s):