Effects of tensile stress induced by silicon nitride passivation on electrical characteristics of AlGaN∕GaN heterostructure field-effect transistors
2005 ◽
Vol 86
(17)
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pp. 172101
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Chang Min Jeon
◽
Jong-Lam Lee
W.S. Tan
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G. Hill
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P.A. Houston
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M.W. Low
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P.J. Parbrook
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...
2004 ◽
Vol 33
(5)
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pp. 400-407
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W. S. Tan
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P. A. Houston
◽
G. Hill
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R. J. Airey
◽
P. J. Parbook
2006 ◽
Vol 24
(3)
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pp. 624-628
◽
S. P. McAlister
◽
J. A. Bardwell
◽
S. Haffouz
◽
H. Tang
2021 ◽
Vol 11
(8)
◽
pp. 085204
Yongxiong Yang
◽
Zhaojun Lin
◽
Mingyan Wang
◽
Heng Zhou
◽
Yang Liu
◽
...
2020 ◽
Vol 10
(7)
◽
pp. 075212
Guangyuan Jiang
◽
Yuanjie Lv
◽
Zhaojun Lin
◽
Yongxiong Yang
◽
Yang Liu
◽
...
2002 ◽
Vol 75
(3)
◽
pp. 387-389
◽
R.M. Chu
◽
Y.D. Zheng
◽
Y.G. Zhou
◽
P. Han
◽
B. Shen
◽
...
2014 ◽
Vol 116
(4)
◽
pp. 044507
◽
Chongbiao Luan
◽
Zhaojun Lin
◽
Yuanjie Lv
◽
Jingtao Zhao
◽
Yutang Wang
◽
...
2012 ◽
Vol 9
(3-4)
◽
pp. 911-914
◽
Martin Mikulics
◽
Hilde Hardtdegen
◽
Andreas Winden
◽
Alfred Fox
◽
Michel Marso
◽
...
Nitin Goyal
◽
Benjamin Iniguez
◽
Tor A. Fjeldly
2007 ◽
Vol 90
(12)
◽
pp. 123505
◽
H. F. Sun
◽
C. R. Bolognesi