Saturation velocity and in‐plane field effect on the velocity in bubble garnet films

1980 ◽  
Vol 51 (8) ◽  
pp. 4346-4351 ◽  
Author(s):  
Shigeo Honda ◽  
Nobuo Fukuda ◽  
Tetsuzo Kusuda
Keyword(s):  
Field Effect ◽  
Plane Field ◽  
Saturation Velocity ◽  
Garnet Films

Evaluation of Low-Temperature Saturation Velocity in $\beta$ -(AlxGa1–x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors

2019 ◽  
Vol 66 (3) ◽  
pp. 1574-1578 ◽  
Author(s):  
Yuewei Zhang ◽  
Zhanbo Xia ◽  
Joe Mcglone ◽  
Wenyuan Sun ◽  
Chandan Joishi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Saturation Velocity

scholarly journals Orthogonal Electric Control of the Out‐Of‐Plane Field‐Effect in 2D Ferroelectric α‐In 2 Se 3

2020 ◽  
Vol 6 (7) ◽  
pp. 2000061 ◽  
Author(s):  
Yue Li ◽  
Chen Chen ◽  
Wei Li ◽  
Xiaoyu Mao ◽  
Heng Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Plane Field ◽  
Electric Control ◽  
Out Of Plane

Saturation velocity phenomena in implanted garnet films

1985 ◽  
Vol 57 (12) ◽  
pp. 5396-5399 ◽  
Author(s):  
I. Pintér ◽  
L. Bódis ◽  
V. G. Kleparski
Keyword(s):  
Saturation Velocity ◽  
Garnet Films

Routes to Low-Energy Magnetic Electronics

SPIN ◽  
2019 ◽  
Vol 09 (02) ◽  
pp. 1940004 ◽  
Author(s):  
Alexander Pyatakov ◽  
Alexey Kaminskiy ◽  
Eugeny Lomov ◽  
Wei Ren ◽  
Shixun Cao ◽  
...  
Keyword(s):  
Image Processing ◽  
Field Effect ◽  
Low Energy ◽  
Magnetic Memory ◽  
Biologically Inspired ◽  
Processing Scheme ◽  
Garnet Films ◽  
Induced Magnetic Anisotropy ◽  
Low Energy Consumption ◽  
Iron Garnet

Various routes to low energy consumption magnetic electronics and magnetic memory are reviewed including field effect spintronics, magnetoelectric magnonics and straintronics. The new idea of biologically inspired straintronic image processing scheme as well as the new experimental results on electric field induced magnetic anisotropy modulation in iron garnet films are presented.

Behavior of bloch lines in epitaxial garnet films subjected to an in-plane field

1986 ◽  
Vol 62 (2-3) ◽  
pp. 233-240 ◽  
Author(s):  
Xiao-tong Yu ◽  
Bao-shan Han ◽  
Bo-zang Li ◽  
Fu-cho Pu
Keyword(s):  
Plane Field ◽  
Garnet Films ◽  
Bloch Lines

Ballistic Saturation Velocity of Quasi-2D Low-Dimensional Nanoscale Field Effect Transistor (FET)

2009 ◽  
Author(s):  
Ismail Saad ◽  
M. Taghi Ahmadi ◽  
A. R. Munawar ◽  
Razali Ismail ◽  
V. K. Arora ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Saturation Velocity ◽  
Effect Transistor ◽  
Low Dimensional

Resonances and domain wall structure transformation in uniaxial garnet films in in-plane field

1990 ◽  
Vol 143 (4-5) ◽  
pp. 264-266
Author(s):  
F.G. Bar'yakhtar ◽  
A.M. Grishin ◽  
A.V. Zinovuk ◽  
L.I. Prikhod'ko
Keyword(s):  
Domain Wall ◽  
Wall Structure ◽  
Structure Transformation ◽  
Plane Field ◽  
Garnet Films ◽  
Domain Wall Structure

A numerical model of electrical characteristics for the monolayer graphene field effect transistors

2019 ◽  
Vol 86 (3) ◽  
pp. 30101
Author(s):  
Xiang-Jie Xiao ◽  
Piao-Rong Xu ◽  
Gen-Hua Liu ◽  
Hui-Ying Zhou ◽  
Jian-Jun Li ◽  
...  
Keyword(s):  
Numerical Model ◽  
Carrier Density ◽  
Field Effect ◽  
Numerical Solutions ◽  
Field Effect Transistors ◽  
Current Model ◽  
Drain Current ◽  
Monolayer Graphene ◽  
Saturation Velocity ◽  
Region Model

A numerical model of carrier saturation velocity and drain current for the monolayer graphene field effect transistors (GFETs) is proposed by considering the exponential distribution of potential fluctuations in disordered graphene system. The carrier saturation velocity of GFET is investigated by the two-region model, and it is found to be affected not only by the carrier density, but also by the graphene disorder. The numerical solutions of the carrier density and carrier saturation velocity in the disordered GFETs yield clear and physical-based results. The simulated results of the drain current model show good consistency with the reported experimental data.

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