Comment on ‘‘Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights’’ [J. Appl. Phys.61, 5159 (1987)]

The electrical characteristics of Cr / p – Si (100) Schottky barrier diodes have been measured in the temperature range of 100–300 K. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. The conventional Richardson plot exhibits non-linearity below 200 K with the linear portion corresponding to activation energy 0.304 eV and Richardson constant (A*) value of 5.41×10-3 Acm-2 K -2 is determined from the intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 Acm-2 K -2 for p-type Si . It is demonstrated that these anomalies result due to the barrier height inhomogeneities prevailing at the metal-semiconductor interface. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Cr/p – Si Schottky barrier diode can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furthermore, the value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier heights.

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Double exponential I–V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-type Schottky barrier diodes in wide temperature range

Applied Physics A ◽

10.1007/s00339-016-0558-x ◽

2016 ◽

Vol 122 (12) ◽

Cited By ~ 30

Author(s):

Çiğdem Ş. Güçlü ◽

Ahmet Faruk Özdemir ◽

Şemsettin Altindal

Keyword(s):

Schottky Barrier ◽

Gaussian Distribution ◽

Wide Temperature Range ◽

Schottky Barrier Diodes ◽

Temperature Range ◽

Barrier Heights ◽

Double Exponential ◽

Double Gaussian Distribution

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Al/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights

Chinese Physics B ◽

10.1088/1674-1056/20/8/087305 ◽

2011 ◽

Vol 20 (8) ◽

pp. 087305 ◽

Cited By ~ 7

Author(s):

Yue-Hu Wang ◽

Yi-Men Zhang ◽

Yu-Ming Zhang ◽

Qing-Wen Song ◽

Ren-Xu Jia

Keyword(s):

Schottky Barrier ◽

Schottky Barrier Diodes ◽

Barrier Heights

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Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.927 ◽

2006 ◽

Vol 527-529 ◽

pp. 927-930 ◽

Cited By ~ 3

Author(s):

Tomonori Nakamura ◽

Toshiyuki Miyanagi ◽

Isaho Kamata ◽

Hidekazu Tsuchida

Keyword(s):

Schottky Barrier ◽

Annealing Temperature ◽

Schottky Contact ◽

Schottky Contacts ◽

Electrical Characteristics ◽

Schottky Barrier Diodes ◽

Barrier Heights ◽

Excess Current ◽

Low Leakage ◽

Low Leakage Current

We compared the electrical characteristics of 4H-SiC(0001) and (000-1) Schottky barrier diodes (SBDs), and derived the Schottky barrier heights (Hbs) of Ta, W, Mo, and Pd on {0001}. We investigated the annealing temperature dependence of Hbs in Mo and the W Schottky contacts for (0001) and (000-1). The Hbs are increased by annealing, except for the W Schottky contact on (0001). The yields of 0.25 cm2 as-deposited Mo-SBDs were 93.3% for (0001) and 71.1% for (000-1), respectively. We also demonstrated over 1 cm2 (0001) as-deposited Mo-SBD with a low leakage current, an excellent ideality factor, and no excess current, encouraging the enlargement of the active area in the SBD.

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Quasi-Schottky Diodes on (n)In.53Ga.47as with Barrier Heights of 0.6 eV

MRS Proceedings ◽

10.1557/proc-240-449 ◽

1991 ◽

Vol 240 ◽

Author(s):

M. Marso ◽

P. Kordoš ◽

R. Meyer ◽

H. Lüth

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Schottky Diodes ◽

Reverse Current ◽

Surface Layers ◽

Fully Depleted ◽

Barrier Heights ◽

Effective Barrier ◽

Basic Parameters ◽

And Control

ABSTRACTThe modification and control of the Schottky barrier height on (n)InGaAs is an important tool at the device preparation as the barrier height is very low, øB° = 0.2 eV. We report about the Schottky barrier enhancement on (n)InGaAs by thin fully depleted surface layers of high doped (p+)InGaAs. Structures with different thicknesses of (p+)InGaAs in the range from 8 to 80 nm were grown by LP MOVPE technique and quasi-Schottky diodes with different contact areas were prepared using titanium as a barrier metal. I-V and I-T characteristics were measured and analysed to obtain basic parameters of prepared diodes, i. e. ideality factor n, effective barrier height øB, series resistance Rgand reverse current density JR (1V). The barrier height enhancement increases with the thickness of the (p+)-layer. Effective barrier heights of øB>0.6 eV, i.e. higher than reported until now, can be obtained with the surface layers of (p+)InGaAs with thicknesses exceeding 25 nm.

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