Quasi-Schottky Diodes on (n)In.53Ga.47as with Barrier Heights of 0.6 eV

1991 ◽  
Vol 240 ◽  
Author(s):  
M. Marso ◽  
P. Kordoš ◽  
R. Meyer ◽  
H. Lüth
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Surface Layers ◽  
Fully Depleted ◽  
Barrier Heights ◽  
Effective Barrier ◽  
Basic Parameters ◽  
And Control

ABSTRACTThe modification and control of the Schottky barrier height on (n)InGaAs is an important tool at the device preparation as the barrier height is very low, øB° = 0.2 eV. We report about the Schottky barrier enhancement on (n)InGaAs by thin fully depleted surface layers of high doped (p+)InGaAs. Structures with different thicknesses of (p+)InGaAs in the range from 8 to 80 nm were grown by LP MOVPE technique and quasi-Schottky diodes with different contact areas were prepared using titanium as a barrier metal. I-V and I-T characteristics were measured and analysed to obtain basic parameters of prepared diodes, i. e. ideality factor n, effective barrier height øB, series resistance Rgand reverse current density JR (1V). The barrier height enhancement increases with the thickness of the (p+)-layer. Effective barrier heights of øB>0.6 eV, i.e. higher than reported until now, can be obtained with the surface layers of (p+)InGaAs with thicknesses exceeding 25 nm.

scholarly journals Schottky diodes based on 4H-SiC epitaxial layers

2021 ◽  
Vol 2103 (1) ◽  
pp. 012235
Author(s):  
A M Strel’chuk ◽  
E V Kalinina
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Alternative Explanation ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Epitaxial Layers ◽  
Barrier Heights ◽  
Current Voltage ◽  
Significant Spread

Abstract Forward and reverse current-voltage (IV) characteristics of Cr-SiC (4H) Schottky diodes based on epitaxial layers with doping (1-3)· 1015 cm-3 were studied in the temperature range of 300-550 K. It is shown that in many cases the IV characteristics are close to ideal, but a significant spread of the forward IV characteristics of diodes manufactured in the same way on the same epitaxial layer was found, probably due to the spread of the Schottky barrier heights reaching 0.3 eV. Heating of the diode, as well as packaging, can also change the Schottky barrier height. An alternative explanation suggests the presence of a powerful shunt.

Evolution of Ti Schottky Barrier Heights on n-Type GaN with Annealing

1996 ◽  
Vol 449 ◽  
Author(s):  
Michèle T. Hirsch ◽  
Kristin J. Duxstad ◽  
E. E. Haller
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Electron Beam Evaporation ◽  
Organic Vapor ◽  
Barrier Heights ◽  
Effective Barrier ◽  
Mott Model ◽  
Current Voltage ◽  
Metal Organic ◽  
Ti Films

ABSTRACTWe report the effect of mild annealing on Ti Schottky diodes on n-type GaN. The Ti films were deposited by electron beam evaporation on n-type GaN grown by metal organic vapor deposition. We determine the effective barrier height Ф60 by current-voltage measurements as a function of temperature. The as-deposited Ti contacts show rectifying behavior with low barrier heights Ф60 ≤ 200meV. At annealing temperatures as low as 60°C we observe an increase of the barrier height to values of 250meV. After annealing at 230°C and above a stable barrier height of 450meV is measured. The increase in barrier height is not due to any macroscopic interfacial reaction. The origin of the observed changes are discussed in terms of the Schottky-Mott model and possible microscopic interfacial reactions.

Schottky Barrier Heights of PT Silicides on SiGe

1993 ◽  
Vol 320 ◽  
Author(s):  
J.R. Jimenez ◽  
X. Xiao ◽  
J.C. Sturm ◽  
P.W. Pellegrini ◽  
M. Chi
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diodes ◽  
Infrared Detector ◽  
Schottky Barriers ◽  
Band Offset ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Metal Thickness ◽  
Deposited Metal

ABSTRACTSilicide/SiGe Schottky barriers are of importance for applications in infrared detectors and SiGe contacts, as well as for fundamental studies of metal-semiconductor interfaces. We have fabricated silicide/SiGe Schottky diodes by the reaction of evaporated Pt and Ir films on p-SiGe alloys with a thin Si capping layer. The onset of metal-SiGe reactions was controlled by the deposited metal thickness. The Schottky barrier heights were determined from internal photoemission. Pt-SiGe and Ir-SiGe reacted diodes have barrier heights that are higher than the corresponding silicide/p-Si diodes. PtSi/Si/SiGe diodes, on the other hand, have lower “barrier heights” that decrease with increasing Ge concentration. The smaller barrier heights in such silicide/Si/SiGe diodes are due to tunneling through the unconsumed Si layer. Equations are derived accounting for this tunneling contribution, and lead to an extracted “barrier height” that is the Si barrier height reduced by the Si/SiGe band offset. Highly bias-tunable barrier heights are obtained (e.g. 0.30 eV to 0.12 eV) by allowing the SiGe/Si band offset to extend higher in energy than the Schottky barrier, leading to a cut-off-wavelength-tunable silicide/SiGe/Si Schottky diode infrared detector.

W/Si Schottky Diodes: Effect of Metal Deposition Conditions on the Barrier Height

1994 ◽  
Vol 356 ◽  
Author(s):  
M. Mamor ◽  
E. Finkman ◽  
F. Meyer ◽  
K. Bouziane
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
X Ray Diffraction ◽  
Experimental Conditions ◽  
X Ray ◽  
Barrier Heights ◽  
P Type ◽  
Deposition Conditions

AbstractThe Schottky barrier heights (ΦB) for W/Si Schottky diodes have been determined from I–V measurements. The effects of the sputter deposition conditions of the W-films were studied. X-ray diffraction was used to examine the structure and the lattice parameters of the W-films while the stress was determined by using a profilometer from the measurement of the curvature of the substrate after metallization. The resistivity is determined by using a four-point probe. A compressive-to-tensile stress transition is associated with the transformation of the ±—W-phase into the (β—W-phase as the working gas pressure is increased. These effects, which are frequently observed, coïncide with a significant increase of the W-film resistivity and a change (△ΦB≈50 meV) in the Schottky barrier height on n-type. On the other hand, the barrier height on the p-type remains constant under all the experimental conditions investigated. These results are discussed in terms of effects of strain and structure of W-films on the work function of the W, as well as in terms of modification of the pinning position of the Fermi level or else change in the value of the Richardson constant.

Acceptor Delta-Doping for Schottky Barrier Enhancement on n-Type GaAs

1990 ◽  
Vol 181 ◽  
Author(s):  
S. J. Pearton ◽  
F. Ren ◽  
C. R. Abernathy ◽  
A. Katz ◽  
W. S. Hobson ◽  
...  
Keyword(s):  
Barrier Height ◽  
Control Sample ◽  
Schottky Contacts ◽  
Applied Bias ◽  
Fully Depleted ◽  
Barrier Heights ◽  
Effective Barrier ◽  
Delta Doping ◽  
Current Conduction ◽  
Increasing Temperature

ABSTRACTThe incorporation of thin C- or Zn-doped layers under metal Schottky contacts on n-type GaAs can lead to significant enhancements in the effective barrier height. A single C δ-doped layer (p = 1.3 × 1020 cm–3) within 100 Å of the surface leads to a barrier height of ∼0.9 eV, a significant increase over the value for a control sample (∼0.75 eV). The use of two sequential δ-doped layers can lead either to a further enhancement in barrier height, or a decrease depending on whether these layers are fully depleted at zero applied bias. The temperature dependence of current conduction in barrier-enhanced diodes was measured. Both the ideality factor and breakdown voltage degrade with increasing temperature. Zinc δ-doping in a similar fashion produces barrier heights of 0.81 eV for one spike and 0.95 eV for two spikes.

Quantum mechanical tunnelling: the missing term to achieve sub-kJ mol−1 barrier heights

2021 ◽  
Author(s):  
Sebastian Kozuch ◽  
Tim Schleif ◽  
Amir Karton
Keyword(s):  
Barrier Height ◽  
Quantum Mechanical ◽  
Effective Barrier Height ◽  
Quantum Tunnelling ◽  
Barrier Heights ◽  
Effective Barrier

Quantum tunnelling can lower the effective barrier height, creating a discrepancy between experiment and theory.

Increased effective barrier heights in Schottky diodes by molecular‐beam epitaxy of CoSi2and Ga‐doped Si on Si(111)

1988 ◽  
Vol 64 (8) ◽  
pp. 4082-4085 ◽  
Author(s):  
R. W. Fathauer ◽  
T. L. Lin ◽  
P. J. Grunthaner ◽  
P. O. Andersson ◽  
J. M. Iannelli ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Schottky Diodes ◽  
Barrier Heights ◽  
Effective Barrier

Passivation of Gaas by Novel P2S5/(NH4)2Sx Sulfurization Techniques

1992 ◽  
Vol 281 ◽  
Author(s):  
J. T. Hsieh ◽  
C. Y. Sun ◽  
H. L. Hwang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Surface Passivation ◽  
Schottky Diodes ◽  
Lower Surface ◽  
State Density ◽  
Surface Band ◽  
Band Bending ◽  
Barrier Heights ◽  
Effective Barrier ◽  
Metal Work

ABSTRACTA new surface passivation technique using P2S5/(NH4)2S on GaAs was investigated, and the results are compared with those of the (NH4)2Sx treatment. With this new surface treatment, the effective barrier heights for both Al- and Au—GaAs Schottky diodes were found to vary with the metal work functions, which is a clear evidence of the lower surface state density. Results of I—V measurements show that P2S5/(NH4)2S—passivated diodes have lower reverse leakage current and higher effective barrier height than those of the (NH4)2Sx -treated ones. Auger Electron Spectroscopy, X—ray photoelectron spectroscopy and Raman scattering measurements were done to characterize the surfaces including their compositions and surface band bending. In this paper, interpretations on this novel passivation effect is also provided.

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