Comparative study of thin poly‐Si films grown by ion implantation and annealing with spectroscopic ellipsometry, Raman spectroscopy, and electron microscopy

1992 ◽  
Vol 72 (8) ◽  
pp. 3648-3658 ◽  
Author(s):  
S. Boultadakis ◽  
S. Logothetidis ◽  
S. Ves
Keyword(s):  
Electron Microscopy ◽  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Comparative Study ◽  
Spectroscopic Ellipsometry ◽  
Si Films

Polymorphous Silicon Films Produced in Large Area Reactors by PECVD at 27.12 MHz and 13.56 MHz

2003 ◽  
Vol 762 ◽  
Author(s):  
H. Águas ◽  
L. Raniero ◽  
L. Pereira ◽  
E. Fortunato ◽  
P. Roca i Cabarrocas ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Spectroscopic Ellipsometry ◽  
Conductivity Measurements ◽  
Large Area ◽  
Structural Characterisation ◽  
Hydrogen Dilution ◽  
Infrared And Raman Spectroscopy ◽  
Impedance Probe ◽  
Si Films ◽  
Probe Measurements

AbstractThis work refers to a study performed on polymorphous silicon (pm-Si:H) at excitation frequencies of 13.56 and 27.12 MHz in a large area PECVD reactor. The plasma was characterised by impedance probe measurements, aiming to identify the plasma conditions that lead to produce pm-Si:H films. The films produced were characterised by spectroscopic ellipsometry, infrared and Raman spectroscopy and hydrogen exodiffusion experiments, which are techniques that permit the structural characterisation of the pm-Si films and to study the possible differences between the films deposited at 13.56 and 27.12 MHz. Conductivity measurements were also performed to determine the transport properties of the films produced. The set of data obtained show that the 27.12 MHz pm-Si:H can be grown at higher rates with less hydrogen dilution and power density, being the resulting films denser, chemically more stable and with improved performances than the pm-Si:H films grown at 13.56 MHz.

Transmission Electron Microscopy and Spectroscopic Ellipsometry Studies of Damage Layer Induced by Large Tilt Angle Ion Implantation

1996 ◽  
Vol 143 (8) ◽  
pp. 2636-2640
Author(s):  
Zhiping He ◽  
Filadelfo Cristiano ◽  
Zuyao Zhou ◽  
Youhua Qian ◽  
Liangyao Chen ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Spectroscopic Ellipsometry ◽  
Tilt Angle ◽  
Damage Layer ◽  
Transmission Electron

scholarly journals Thermal Annealing of High Dose P Implantation in 4H-SiC

2019 ◽  
Vol 963 ◽  
pp. 399-402 ◽  
Author(s):  
Cristiano Calabretta ◽  
Massimo Zimbone ◽  
Eric G. Barbagiovanni ◽  
Simona Boninelli ◽  
Nicolò Piluso ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Epitaxial Layer ◽  
Point Defects ◽  
High Dose ◽  
Double Step ◽  
Post Annealing ◽  
Transmission Electron

In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminescence (PL), Raman spectroscopy and transmission electron microscopy (TEM). The aim of this work was to test the effectiveness of double step annealing to reduce the density of point defects generated during the annealing of a P implanted 4H-SiC epitaxial layer. The outcome of this work evidences that neither the first 1 hour isochronal annealing at 1650 - 1700 - 1750 °C, nor the second one at 1500 °C for times between 4 hour and 14 hour were able to recover a satisfactory crystallinity of the sample and achieve dopant activations exceeding 1%.

Lateral Solid Phase Epitaxy of Evaporated Amorphous Si Films onto SiO2 Patterns

1983 ◽  
Vol 25 ◽  
Author(s):  
H. Yamamoto ◽  
H. Ishiwara ◽  
S. Furukawa ◽  
M. Tamura ◽  
T. Tokuyama
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Si Films ◽  
Kinetics Of

ABSTRACTLateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films vacuum-evaporated on Si substrates with SiO2 patterns has been investigated, in which the film first grows vertically in the regions directly contacted to the Si substrates and then grows laterally onto SiO2 patterns. It has been found from transmission electron microscopy and Nomarski optical microscopy that use of dense a-Si films, which are formed by evaporation on heated substrates and subsequent amorphization by Si+ ion implantation, is essentially important for L-SPE. The maximum L-SPE length of 5–6μm was obtained along the <010> direction after 10hourannealing at 600°C. The kinetics of the L-SPE growth has also been investigated.

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