Field effect mobility model in organic thin film transistor

A fully transparent conformal organic thin-film field-effect transistor array is obtained based on an ultrathin embedded metal-grid electrode and a solution-processed C8-BTBT film.

Download Full-text

Organic Thin Film Transistor Using a Photo-Curable Organic/Inorganic Hybrid Material as a Gate Dielectric

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2008.ic38 ◽

2008 ◽

Vol 8 (9) ◽

pp. 4561-4564 ◽

Cited By ~ 3

Author(s):

Do-Hoon Hwang ◽

Yong Suk Yang ◽

Jeong-Ik Lee ◽

Seong Hyun Kim ◽

Oun-Ho Park ◽

...

Keyword(s):

Thin Film ◽

Field Effect ◽

Gate Dielectric ◽

Thin Film Transistor ◽

Dissipation Factor ◽

Organic Thin Film ◽

Organic Thin Film Transistor ◽

Metal Insulator Metal ◽

Oligomeric Silsesquioxane ◽

Photo Acid Generator

A polyhedral oligomeric silsesquioxane derivative (POSS-OXT) containing photo-curable 4-membered cyclic oxetane functional groups was used as a gate dielectric of organic field effect transistor. The POSS-OXT was cross-linked and completely solidified by UV irradiation in the presence of a selected photo acid generator, and pinhole free uniform thin film was obtained. We fabricated a metal/insulator/metal device of Au/POSS-OXT (300 nm)/Au with area of 0.7 mm2 and the measured leakage current and capacitance of the device to evaluate the insulating properties of the POSS-OXT thin film. The maximum current was about 0.25 nA when 40 V was applied to the device. The observed values of the capacitance per unit area and dissipation factor were 11.4 nF/cm2 and 0.025, respectively. We fabricated an organic thin film transistor with pentacene as the active semiconductor and the photo-cross-linked POSS-OXT as an insulator. A field effect carrier mobility of 0.03 cm2/V·s was obtained with the device.

Download Full-text

Modelling and Simulation Approach for Organic Thin-Film Transistors Using MATLAB Simulation

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1107.514 ◽

2015 ◽

Vol 1107 ◽

pp. 514-519

Author(s):

Umar Faruk Shuib ◽

Khairul Anuar Mohamad ◽

Afishah Alias ◽

Tamer A. Tabet ◽

Bablu K. Gosh ◽

...

Keyword(s):

Thin Film ◽

Low Cost ◽

Thin Film Transistor ◽

Drain Current ◽

Mobility Model ◽

Channel Length ◽

Analytical Models ◽

Organic Thin Film ◽

Organic Thin Film Transistor ◽

Organic Transistor

As organic transistors are preparing to make improvements towards flexible and low cost electronics applications, the analytical models and simulation methods were demanded to predict the optimized performance and circuit design. In this paper, we investigated the analytical model of an organic transistor device and simulate the output and transfer characteristics of the device using MATLAB tools for different channel length (L) of the organic transistor. In the simulation, the Pool-Frenkel mobility model was used to represent the conductive channel of organic transistor. The different channel length has been simulated with the value of 50 μm, 10 μm and 5 μm. This research paper analyses the performance of organic thin film transistor (TFT) for top contact bottom gate device. From the simulation, drain current of organic transistor was increased as the channel length decreased. Other extraction value such sub-threshold and current on/off ratio is 0.41 V and 21.1 respectively. Thus, the simulation provides significant extraction of information about the behaviour of the organic thin film transistor.

Download Full-text

Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽

10.3390/electronics10020200 ◽

2021 ◽

Vol 10 (2) ◽

pp. 200

Author(s):

Do Won Kim ◽

Hyeon Joong Kim ◽

Changmin Lee ◽

Kyoungdu Kim ◽

Jin-Hyuk Bae ◽

...

Keyword(s):

Thin Film ◽

Field Effect ◽

Thin Film Transistor ◽

Sol Gel ◽

Precursor Concentration ◽

Sno2 Thin Film ◽

Field Effect Mobility ◽

Si Substrates ◽

Channel Layer ◽

Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

Download Full-text