Deep level transient spectroscopy of high‐energy heavy ion irradiation‐induced defects inn‐type germanium

The defects formation in ion-irradiated 4H-SiC was investigated and correlated with the electrical properties of Schottky diodes. The diodes were irradiated with 1 MeV Si+-ions, at fluences ranging between 1×109cm-2 and 1.8×1013cm-2. After irradiation, the current-voltage characteristics of the diodes showed an increase of the leakage current with increasing ion fluence. The reverse I-V characteristics of the irradiated diodes monitored as a function of the temperature showed an Arrhenius dependence of the leakage, with an activation energy of 0.64 eV. Deep level transient spectroscopy (DLTS) allowed to demonstrate that the Z1/Z2 center of 4H-SiC is the dominant defect in the increase of the leakage current in the irradiated material.

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M-Center in Neutron Irradiated 4H-SiC

10.20944/preprints202110.0423.v1 ◽

2021 ◽

Author(s):

Ivana Capan ◽

Tomislav Brodar ◽

Takahiro Makino ◽

Vladimir Radulovic ◽

Luka Snoj

Keyword(s):

Fast Neutron ◽

Neutron Irradiation ◽

Deep Level Transient Spectroscopy ◽

Proton Irradiation ◽

Deep Level ◽

Fast Neutron Irradiation ◽

Transient Spectroscopy ◽

Induced Defects ◽

Irradiation Induced Defects ◽

Metastable Defect

We report on metastable defects introduced in n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation induced defects. In addition to silicon vacancy (Vsi) and carbon antisite-carbon vacancy (CAV) complex, the neutron irradiation has introduced four deep level defects, all arising from the metastable defect, the M-center. The metastable deep level defects were investigated by deep level transient spectroscopy (DLTS), high-resolution Laplace DLTS (L-DLTS) and isothermal DLTS. The existence of the fourth deep level M4, recently observed in ion implanted 4H-SiC, has been additionally confirmed in neutron irradiated samples. The isothermal DLTS technique has been proven as a useful tool for studying the metastable defects.

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Heavy ion irradiation induced defects in Zircaloy-4

Physica Scripta ◽

10.1088/1402-4896/abe3bf ◽

2021 ◽

Vol 96 (4) ◽

pp. 045008

Author(s):

M Izerrouken ◽

R Hazem ◽

U Yahsi ◽

S E Naceri ◽

C Tav ◽

...

Keyword(s):

Ion Irradiation ◽

Heavy Ion ◽

Heavy Ion Irradiation ◽

Induced Defects ◽

Irradiation Induced Defects

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Hydrogen Decoration of Vacancy Related Complexes in Hydrogen Implanted Silicon

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.178-179.192 ◽

2011 ◽

Vol 178-179 ◽

pp. 192-197 ◽

Cited By ~ 5

Author(s):

Helge Malmbekk ◽

Lasse Vines ◽

Edouard V. Monakhov ◽

Bengt Gunnar Svensson

Keyword(s):

Conduction Band ◽

Deep Level Transient Spectroscopy ◽

Minority Carrier ◽

Deep Level ◽

Conduction Band Edge ◽

Absolute Concentrations ◽

Transient Spectroscopy ◽

P Type ◽

Induced Defects ◽

Irradiation Induced Defects

Interaction between hydrogen (H) and irradiation induced defects in p-type silicon (Si) have been studied in H implanted pn-junctions, using deep level transient spectroscopy (DLTS), as well as minority carrier transient spectroscopy (MCTS). Two H related levels at Ev+0.27 eV and Ec-0.32 eV have been observed (Ev and Ec denote the valence and conduction band edge, respectively). Both levels form after a 10 min anneal at 125C, concurrent with the release of H from the boron-hydrogen (B-H) complex. The correlated formation rates and absolute concentrations of the two levels support the notion that they are due to the same defect. In addition, a level at Ec-0.45 eV is observed and discussed in terms of vacancy-hydrogen related defects.

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Defects in High Energy Ion Irradiated 4H-SiC

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.397 ◽

2009 ◽

Vol 615-617 ◽

pp. 397-400 ◽

Cited By ~ 3

Author(s):

Gaetano Izzo ◽

Grazia Litrico ◽

Andrea Severino ◽

Gaetano Foti ◽

Francesco La Via ◽

...

Keyword(s):

Leakage Current ◽

Deep Level Transient Spectroscopy ◽

Ion Irradiation ◽

Deep Level ◽

High Energy ◽

Conduction Band Edge ◽

Transmission Electron ◽

Current Voltage ◽

Transient Spectroscopy ◽

Fluence Range

The defects produced by 7.0 MeV C+ irradiation in 4H-SiC epitaxial layer were followed by Deep Level Transient Spectroscopy, current-voltage measurements and Transmission Electron Microscopy in a large fluence range (109-51013 ions/cm2). At low fluence (109 -1010 ions/cm2), the formation of three main level defects located at 0.68 eV, 0.98 eV and 1.4 eV below the conduction band edge is detected. The trap concentration increases with ion fluence suggesting that these levels are associated to the point defects generated by ion irradiation. In this fluence range the leakage current of the diodes does not change. At higher fluence an evolution of defects occurs, as the concentration of traps at 0.68 eV and 1.4 eV decreases, while the intensity of the level at 0.98 eV remains constant. In this fluence range complex defects are formed and an increase of a factor five in the leakage current is measured.

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