Deep Level Transient Spectroscopy Analysis of 10 MeV Proton and 1 MeV Electron Irradiation-Induced Defects in p-InGaP and InGaP-based Solar Cells

Positron annihilation lifetime (PAL) spectroscopy，photo-induced current transient spectroscopy (PICTS) and thermally stimulated current (TSC) have been employed to study the formation of compensation defects and their evolvement under iron phosphide (IP) ambience or pure phosphide (PP) ambience. In the formation of IP SI-InP, the diffusion of Fe atoms suppresses the formation of some open-volume defects. As to PP SI-InP, VInH4 complexes dissociate into acceptor vacancies VInHn(n-3)(n=0,1,2,3), which compensate residual donor type defects and make the sample semi-insulating. Electron irradiation-induced deep level defects have been studied by TSC in PP and IP SI-InP, respectively. In contrast to a high concentration of irradiation-induced defects in as-grown and PP annealed InP, IP SI-InP has a very low concentration of defects.

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M-Center in Neutron Irradiated 4H-SiC

10.20944/preprints202110.0423.v1 ◽

2021 ◽

Author(s):

Ivana Capan ◽

Tomislav Brodar ◽

Takahiro Makino ◽

Vladimir Radulovic ◽

Luka Snoj

Keyword(s):

Fast Neutron ◽

Neutron Irradiation ◽

Deep Level Transient Spectroscopy ◽

Proton Irradiation ◽

Deep Level ◽

Fast Neutron Irradiation ◽

Transient Spectroscopy ◽

Induced Defects ◽

Irradiation Induced Defects ◽

Metastable Defect

We report on metastable defects introduced in n-type 4H-SiC material by epithermal and fast neutron irradiation. The epithermal and fast neutron irradiation defects in 4H-SiC are much less explored compared to electron or proton irradiation induced defects. In addition to silicon vacancy (Vsi) and carbon antisite-carbon vacancy (CAV) complex, the neutron irradiation has introduced four deep level defects, all arising from the metastable defect, the M-center. The metastable deep level defects were investigated by deep level transient spectroscopy (DLTS), high-resolution Laplace DLTS (L-DLTS) and isothermal DLTS. The existence of the fourth deep level M4, recently observed in ion implanted 4H-SiC, has been additionally confirmed in neutron irradiated samples. The isothermal DLTS technique has been proven as a useful tool for studying the metastable defects.

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Hydrogen Decoration of Vacancy Related Complexes in Hydrogen Implanted Silicon

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.178-179.192 ◽

2011 ◽

Vol 178-179 ◽

pp. 192-197 ◽

Cited By ~ 5

Author(s):

Helge Malmbekk ◽

Lasse Vines ◽

Edouard V. Monakhov ◽

Bengt Gunnar Svensson

Keyword(s):

Conduction Band ◽

Deep Level Transient Spectroscopy ◽

Minority Carrier ◽

Deep Level ◽

Conduction Band Edge ◽

Absolute Concentrations ◽

Transient Spectroscopy ◽

P Type ◽

Induced Defects ◽

Irradiation Induced Defects

Interaction between hydrogen (H) and irradiation induced defects in p-type silicon (Si) have been studied in H implanted pn-junctions, using deep level transient spectroscopy (DLTS), as well as minority carrier transient spectroscopy (MCTS). Two H related levels at Ev+0.27 eV and Ec-0.32 eV have been observed (Ev and Ec denote the valence and conduction band edge, respectively). Both levels form after a 10 min anneal at 125C, concurrent with the release of H from the boron-hydrogen (B-H) complex. The correlated formation rates and absolute concentrations of the two levels support the notion that they are due to the same defect. In addition, a level at Ec-0.45 eV is observed and discussed in terms of vacancy-hydrogen related defects.

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Deep-level transient spectroscopy analysis of proton-irradiated n+/p InGaP solar cells

Physica B Condensed Matter ◽

10.1016/s0921-4526(01)00935-8 ◽

2001 ◽

Vol 308-310 ◽

pp. 1181-1184 ◽

Cited By ~ 5

Author(s):

N. Dharmarasu ◽

M. Yamaguchi ◽

A. Khan ◽

T. Takamoto ◽

T. Ohshima ◽

...

Keyword(s):

Solar Cells ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Spectroscopy Analysis ◽

Transient Spectroscopy

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On the Effect of Lead on Irradiation Induced Defects in Silicon

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.108-109.373 ◽

2005 ◽

Vol 108-109 ◽

pp. 373-378 ◽

Cited By ~ 10

Author(s):

Marie-Laure David ◽

Eddy Simoen ◽

Cor Claeys ◽

V.B. Neimash ◽

M. Kras'ko ◽

...

Keyword(s):

Cross Section ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Group Iv ◽

Conduction Band Edge ◽

Czochralski Silicon ◽

Transient Spectroscopy ◽

Induced Defects ◽

Irradiation Induced Defects ◽

Pb Doping

Different group IV impurities (Pb, C, and Sn) have been introduced in the melt during the growth of n-type Czochralski silicon. The samples have been irradiated with 1 MeV electrons to a fluence of 4x1015cm-2. The irradiation-induced defects have been studied by Deep Level Transient Spectroscopy (DLTS). It is shown that the formation of one of the irradiation-induced deep level is avoided by the Pb-doping. This level is located at 0.37 eV from the conduction band edge (EC) and shows an apparent capture cross-section of 7x10-15cm2. In addition, another irradiation induced deep level located at EC - 0.32 eV has been studied in more details.

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Ion Implantation and 1 MeV Electron Irradiation of 4H-SiC---Comparison Studies

MRS Proceedings ◽

10.1557/proc-815-j1.4 ◽

2004 ◽

Vol 815 ◽

Cited By ~ 1

Author(s):

A. O. Evwaraye ◽

S. R. Smith ◽

W. C. Mitchel ◽

G. C. Farlow ◽

M. A. Capano

Keyword(s):

Electron Irradiation ◽

Deep Level Transient Spectroscopy ◽

Room Temperature ◽

Deep Level ◽

Schottky Diodes ◽

Annealing Behavior ◽

Argon Ions ◽

Transient Spectroscopy ◽

Induced Defects ◽

Post Implantation

AbstractArgon ions (Ar+) were implanted into n-type 4H-SiC epitaxial layers at 600 °C. The energy of the ions was 160 keV and at a dose of 2 × 1016 cm−2. After post-implantation annealing at 1600 °C, Schottky diodes were fabricated on the ion implanted samples. Bulk n-type 4H-SiC samples were irradiated at room temperature with 1 MeV electrons at doses of 1 × 1016 to 5.1 × 1017 el/cm2. The current density of the beam was 0.91 μA/cm2. Deep Level Transient Spectroscopy (DLTS) was used to characterize the induced defects. DLTS studies of Ar+ implanted samples showed six defect levels at EC – 0.18 eV, EC – 0.23eV, EC – 0.31eV, EC – 0.38 eV, EC – 0.72 eV, and EC – 0.81 eV. Z1/Z2 defect is the dominant defect in the electron irradiated sample and anneals out completely after 10 minutes at 1000 °C. However, Z1/Z2 defect in Ar+ implanted samples was stable up to 1600 °C. It is suggested that the annealing behavior of Z1/Z2 depends on the source of its formation.

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