scholarly journals Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties

Electronics ◽  
2021 ◽  
Vol 10 (24) ◽  
pp. 3096
Author(s):  
P. Vigneshwara Raja ◽  
Nandha Kumar Subramani ◽  
Florent Gaillard ◽  
Mohamed Bouslama ◽  
Raphaël Sommet ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Dispersion ◽  
Drain Current ◽  
Surface Region ◽  
Electron Trap ◽  
High Electron ◽  
Trap States ◽  
Dispersion Properties ◽  
Donor States ◽  
Surface Donor

The buffer and surface trapping effects on low-frequency (LF) Y-parameters of Fe-doped AlGaN/GaN high-electron mobility transistors (HEMTs) are analyzed through experimental and simulation studies. The drain current transient (DCT) characterization is also carried out to complement the trapping investigation. The Y22 and DCT measurements reveal the presence of an electron trap at 0.45–0.5 eV in the HEMT structure. On the other hand, two electron trap states at 0.2 eV and 0.45 eV are identified from the LF Y21 dispersion properties of the same device. The Y-parameter simulations are performed in Sentaurus TCAD in order to detect the spatial location of the traps. As an effective approach, physics-based TCAD models are calibrated by matching the simulated I-V with the measured DC data. The effect of surface donor energy level and trap density on the two-dimensional electron gas (2DEG) density is examined. The validated Y21 simulation results indicate the existence of both acceptor-like traps at EC –0.45 eV in the GaN buffer and surface donor states at EC –0.2 eV in the GaN/nitride interface. Thus, it is shown that LF Y21 characteristics could help in differentiating the defects present in the buffer and surface region, while the DCT and Y22 are mostly sensitive to the buffer traps.

Drain current transient and low-frequency dispersion characterizations in AlGaN/GaN HEMTs

2016 ◽  
Vol 8 (4-5) ◽  
pp. 663-672 ◽  
Author(s):  
Agostino Benvegnù ◽  
Davide Bisi ◽  
Sylvain Laurent ◽  
Matteo Meneghini ◽  
Gaudenzio Meneghesso ◽  
...  
Keyword(s):  
Deep Level ◽  
Low Frequency ◽  
Frequency Dispersion ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Current Transient ◽  
High Electron ◽  
Large Signal ◽  
Class Ab ◽  
Electron Mobility Transistors

This paper presents a detailed trap investigation based on combined pulsed I/V measurements, drain current transient (DCT) measurements and low-frequency dispersion measurements of transconductance (LF Y21) and output conductance (LF Y22). DCT characterization is carried out over a 7-decade time scale. LF Y21and Y22measurements are carried out over the frequency range from 100 Hz to 1 GHz. These combined measurements were performed at several temperatures for AlGaN/GaN high electron mobility transistors under class AB bias condition and allowed the extraction of the activation energy (Ea) and the capture cross section (σc) of the identified traps. Extensive measurements of these characteristics as a function of device bias are reported in this work to understand the dynamic trap behavior. This paper demonstrated a correlation between LF small-signal (LF Y21and Y22) and large-signal voltage steps (DCT) results. These measurements allow identifying the same 0.64 eV deep level, attributed to a native defect of GaN, possibly located in the buffer layer.

Electron trap states and low frequency noise in tunnel junctions

1987 ◽  
Vol 23 (2) ◽  
pp. 1658-1661 ◽  
Author(s):  
C. Rogers ◽  
R. Buhrman ◽  
W. Gallagher ◽  
S. Raider ◽  
A. Kleinsasser ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Low Frequency ◽  
Electron Trap ◽  
Frequency Noise ◽  
Trap States ◽  
Low Frequency Noise

Highlighting trapping phenomena in microwave GaN HEMTs by low-frequencyS-parameters

2015 ◽  
Vol 7 (3-4) ◽  
pp. 287-296 ◽  
Author(s):  
Clément Potier ◽  
Jean-Claude Jacquet ◽  
Christian Dua ◽  
Audrey Martin ◽  
Michel Campovecchio ◽  
...  
Keyword(s):  
Cross Section ◽  
Low Frequency ◽  
Frequency Dispersion ◽  
High Electron Mobility Transistors ◽  
Buffer Layers ◽  
High Electron ◽  
Carbon Doped ◽  
Electron Mobility Transistors ◽  
S Parameter ◽  
Gan Hemts

This paper presents an original characterization method of trapping phenomena in gallium nitride high electron mobility transistors (GaN HEMTs). This method is based on the frequency dispersion of the output-admittance that is characterized by low-frequency S-parameter measurements. As microwave performances of GaN HEMTs are significantly affected by trapping effects, trap characterization is essential for this power technology. The proposed measurement setup and the trap characterization method allow us to determine the activation energy Ea and the capture cross-section σnof the identified traps. Three original characterizations are presented here to investigate the particular effects of bias, ageing, and light, respectively. These measurements are illustrated through different technologies such as AlGaN/GaN and InAlN/GaN HEMTs with non-intentionally doped or carbon doped GaN buffer layers. The extracted trap signatures are intended to provide an efficient feedback to the technology developments

scholarly journals AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

Micromachines ◽  
2020 ◽  
Vol 11 (12) ◽  
pp. 1131
Author(s):  
Justinas Jorudas ◽  
Artūr Šimukovič ◽  
Maksym Dub ◽  
Maciej Sakowicz ◽  
Paweł Prystawko ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Hybrid Material ◽  
Low Frequency ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Noise Characteristics ◽  
Noise Measurements

We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN–SiC hybrid material was developed in order to improve thermal management and to reduce trapping effects. Fabricated Schottky barrier diodes (SBDs) demonstrated an ideality factor n at approximately 1.7 and breakdown voltages (fields) up to 780 V (approximately 0.8 MV/cm). Hall measurements revealed a thermally stable electron density at N2DEG = 1 × 1013 cm−2 of two-dimensional electron gas in the range of 77–300 K, with mobilities μ = 1.7 × 103 cm2/V∙s and μ = 1.0 × 104 cm2/V∙s at 300 K and 77 K, respectively. The maximum drain current and the transconductance were demonstrated to be as high as 0.5 A/mm and 150 mS/mm, respectively, for the transistors with gate length LG = 5 μm. Low-frequency noise measurements demonstrated an effective trap density below 1019 cm−3 eV−1. RF analysis revealed fT and fmax values up to 1.3 GHz and 6.7 GHz, respectively, demonstrating figures of merit fT × LG up to 6.7 GHz × µm. These data further confirm the high potential of a GaN–SiC hybrid material for the development of thin high electron mobility transistors (HEMTs) and SBDs with improved thermal stability for high-frequency and high-power applications.

Low-frequency dispersion properties of plasmas with variable-charge impurities

2000 ◽  
Vol 7 (2) ◽  
pp. 461-465 ◽  
Author(s):  
K. N. Ostrikov ◽  
S. V. Vladimirov ◽  
M. Y. Yu ◽  
G. E. Morfill
Keyword(s):  
Low Frequency ◽  
Frequency Dispersion ◽  
Dispersion Properties ◽  
Variable Charge

scholarly journals Quantitative analysis of electrically active defects in Au/AlGaN/GaN HEMTs structure using capacitance–frequency and DLTS measurements

2021 ◽  
Author(s):  
Nargis Bano ◽  
Ijaz Hussain ◽  
Eman Al-Ghamdi ◽  
M. Saeed Ahmad
Keyword(s):  
Time Constant ◽  
Point Defects ◽  
Deep Level ◽  
Surface States ◽  
High Electron Mobility Transistor ◽  
Interface States ◽  
Electron Trap ◽  
Nitrogen Vacancy ◽  
High Electron ◽  
Trap States

Abstract Electrical trap states in the AlGaN-based high-electron-mobility transistor (HEMT) structures limit the performances of devices. In this study, we present a comprehensive study of the electrical trap states in AlGaN/GaN HEMT structures and examine their influence on the device performance. We performed capacitance–frequency and conductance–frequency measurements to determine the time constant and the density of the interface states. The density of the interface states was calculated to be 2 × 1010 cm−2 eV−1, and the time constant of the interface states was 1 μs. Deep-level transient spectroscopy showed the presence of one electron trap E1 (negative peak) and three hole-like traps P1, P2, and P3 (positive peaks). The thermal activation energies for E1, P1, P2, and P3 traps were calculated to be 1.19, 0.64, 0.95, and 1.32 eV, respectively. The electron trap E1 and the hole-like traps P1, P2 and P3 were observed to originate from the point defects or their complexes in the material. The hole-like traps reflected the changes created in the population of the surface states owing to the capture of the surface states; these traps originated from the point defects related to the nitrogen vacancy.

Surface Passivation of GaAs Power FETs

1999 ◽  
Vol 573 ◽  
Author(s):  
Tsuyoshi Tanaka ◽  
Hidetoshi Furukawa ◽  
Kazuo Miyatsuji ◽  
Daisuke Ueda
Keyword(s):  
Surface Passivation ◽  
Frequency Dispersion ◽  
Drain Current ◽  
Electron Trap ◽  
Intermodulation Distortion ◽  
Passivation Layer ◽  
The Other ◽  
Trapping Effect ◽  
Trapping Effects

ABSTRACTThe surface passivation of GaAs power FET has been investigated. Intermodulation distortion of GaAs power FET was found to be affected by frequency dispersion which originates from electron trap at the surface in the vicinity of the gate. There are two ways to suppress the frequency dispersion. One is reducing electron trap itself by using surface passivation, the other is making surface insensitive to the surface trapping effect. We found the FET with undoped InGaP layers on the n-GaAs channel is free from surface trapping effects. The undoped InGaP layer acts as an ideal passivation layer for the channel, since it shows only 2% frequency dispersion of drain current at 1MHz compared to DC condition.

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Magnetic Permeability and Relaxation Frequency in High Frequency Magnetic Materials.

2001 ◽  
Vol 674 ◽  
Author(s):  
M.I. Rosales ◽  
H. Montiel ◽  
R. Valenzuela
Keyword(s):  
High Frequency ◽  
Domain Walls ◽  
Magnetocrystalline Anisotropy ◽  
Low Frequency ◽  
Frequency Dispersion ◽  
Anisotropy Constant ◽  
Relaxation Frequency ◽  
Resonance Relaxation ◽  
Frequency Behavior

ABSTRACTAn investigation of the frequency behavior of polycrystalline ferrites is presented. It is shown that the low frequency dispersion (f < 10 MHz) of permeability is associated with the bulging of pinned domain walls, and has a mixed resonance-relaxation character, closer to the latter. It is also shown that there is a linear relationship between the magnetocrystalline anisotropy constant, K1, and the relaxation frequency. The slope of this correlation depends on the grain size. Such a relationship could allow the determination of this basic parameter from polycrystalline samples.

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