Thermal poling of alkaline earth boroaluminosilicate glasses with intrinsically high dielectric breakdown strength

2012 ◽  
Vol 111 (8) ◽  
pp. 083519 ◽  
Author(s):  
Nicholas J. Smith ◽  
Michael T. Lanagan ◽  
Carlo G. Pantano
2015 ◽  
Vol 2015 (CICMT) ◽  
pp. 000116-000120 ◽  
Author(s):  
Takuya Hoshina ◽  
Mikio Yamazaki ◽  
Hiroaki Takeda ◽  
Takaaki Tsurumi

We precisely measured the dielectric breakdown strength of SrTiO3, CaTiO3, and CaZrO3 ceramics as a function of temperature, and revealed the dielectric breakdown mechanism of the ceramics. For the dielectric breakdown test, ceramics specimens with a lot of round-bottom holes were prepared. Using the specimens, the breakdown positions were stabilized and a reliability of breakdown strength was improved as well as the measurement efficiency. As a result of the dielectric breakdown tests, it was found that the dielectric breakdown strength decreased with increasing permittivity at room temperature and the permittivity dependence of breakdown strength obeyed Griffith type energy release rate model. At high temperature above 100ºC, the dielectric breakdown mechanism of SrTiO3 and CaTiO3 ceramics was explained by an intrinsic breakdown model. In contrast, an intrinsic dielectric breakdown of CaZrO3 ceramics didn't occur in the measurement temperature range up to 210ºC. To obtain a high dielectric breakdown strength at high temperature, the dielectric permittivity is required to be low to some extent and the defect concentration of oxygen vacancies should be minimized in the perovskite-structured oxide.


2003 ◽  
Vol 433-436 ◽  
pp. 725-730 ◽  
Author(s):  
Satoshi Tanimoto ◽  
Masakatsu Hoshi ◽  
Norihiko Kiritani ◽  
Hideyo Okushi ◽  
Kazuo Arai

Polymer ◽  
2014 ◽  
Vol 55 (24) ◽  
pp. 6212-6219 ◽  
Author(s):  
Frederikke Bahrt Madsen ◽  
Liyun Yu ◽  
Anders Egede Daugaard ◽  
Søren Hvilsted ◽  
Anne Ladegaard Skov

2019 ◽  
Vol 7 (26) ◽  
pp. 8120-8130 ◽  
Author(s):  
Chi Zhang ◽  
Ying Chen ◽  
Mingxing Zhou ◽  
Xin Li ◽  
Lei Wang ◽  
...  

The pursuit of electronic materials and devices with high dielectric breakdown strength (DBS), and the clarification of the dielectric breakdown mechanism are of great importance to scientific research and industry applications.


1991 ◽  
Vol 241 ◽  
Author(s):  
U. K. Mishra ◽  
R. M. Kolbas

ABSTRACTMaterials grown at a low temperature by MBE and subsequently annealed at a high temperature have an excess amount of Arsenic and have demonstrated high dielectric breakdown strength and low carrier lifetime. These properties have found applications in analog and switching power applications, in picosecond pulse generation, in device isolation and in the selective intermixing of heterostructures. This paper reviews these applications.


Author(s):  
Muhammad Qusyairie Saari ◽  
Julie Juliewatty Mohamed ◽  
Muhammad Azwadi Sulaiman ◽  
Mohd Fariz Abd Rahman ◽  
Zainal Arifin Ahmad ◽  
...  

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