Nonalloyed Ohmic contacts ton‐GaAs by molecular beam epitaxy

ABSTRACTTo study the formation of ohmic contacts, several metals have been deposited on p-types ZnTe and ZnSe epitaxial layers. The metals were deposited on the layers either by simple evaporation or by electroplating. The current-voltage characteristics associated with each metal contact were measured. The preliminary results of these measurements indicate that electroplating is a better technique for making ohmic contact to these layers.

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Summary Abstract: Ge/Si heterojunction Ohmic contacts formed by molecular beam epitaxy

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.583593 ◽

1986 ◽

Vol 4 (2) ◽

pp. 661

Author(s):

M. J. Hafich

Keyword(s):

Molecular Beam Epitaxy ◽

Ohmic Contacts ◽

Molecular Beam

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Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.4738768 ◽

2012 ◽

Vol 101 (3) ◽

pp. 032109 ◽

Cited By ~ 25

Author(s):

Faiza Afroz Faria ◽

Jia Guo ◽

Pei Zhao ◽

Guowang Li ◽

Prem Kumar Kandaswamy ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Ohmic Contacts ◽

Molecular Beam ◽

Low Resistance ◽

Si Doping

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Low-resistance Ohmic contacts for high-power GaN field-effect transistors obtained by selective area growth using plasma-assisted molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.2234566 ◽

2006 ◽

Vol 89 (4) ◽

pp. 042101 ◽

Cited By ~ 16

Author(s):

Seung Jae Hong ◽

Kyekyoon (Kevin) Kim

Keyword(s):

Molecular Beam Epitaxy ◽

High Power ◽

Field Effect ◽

Ohmic Contacts ◽

Molecular Beam ◽

Field Effect Transistors ◽

Selective Area Growth ◽

Low Resistance ◽

Selective Area ◽

Area Growth

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Low-Resistivity Non-Alloyed Ohmic Contacts to p- and n-Gaas Using In-Situ Integrated Process

MRS Proceedings ◽

10.1557/proc-337-287 ◽

1994 ◽

Vol 337 ◽

Author(s):

M. Hong ◽

D. Vakhshoori ◽

J. P. Mannaerts ◽

J. Kwo

Keyword(s):

Molecular Beam Epitaxy ◽

Ohmic Contacts ◽

Molecular Beam ◽

Integrated System ◽

Integrated Process ◽

Low Resistivity ◽

Uniform Doping

ABSTRACTVery low-resistivity non-alloyed ohmic contacts (Rc) to both p- and n-GaAs were realized using molecular beam epitaxy (MBE) in a vacuum integrated system. Three different metals of Au, Ag, and Nb were in-situ deposited on (1) p+-GaAs which was heavily Be-doped either in a uniform doping or with a 5-doping scheme; and (2) n+-GaAs which was doped in a 5-pair Si δ-doping with a spacer GaAs-Si 2.5 nm thick. In both cases, low Rc values of ≤ (1-5) x 10-7 Ω-cm2 were achieved.

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