Origin of the Excellent Thermal Stability of Al/Si-Based Ohmic Contacts to p-Type LPE 4H-SiC

2001 ◽  
Vol 353-356 ◽  
pp. 251-254 ◽  
Author(s):  
Liliana Kassamakova ◽  
Roumen Kakanakov ◽  
Ivan Kassamakov ◽  
Konstantinos Zekentes ◽  
Katerina Tsagaraki ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ohmic Contacts ◽  
Excellent Thermal Stability ◽  
P Type ◽  
Thermal Stability Of

Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC

2015 ◽  
Vol 117 (2) ◽  
pp. 025703 ◽  
Author(s):  
Hailong Yu ◽  
Xufang Zhang ◽  
Huajun Shen ◽  
Yidan Tang ◽  
Yun Bai ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ohmic Contacts ◽  
P Type ◽  
Thermal Stability Of

Thermal Stability of Ohmic Contacts to n-InxGa1−xN

1995 ◽  
Vol 395 ◽  
Author(s):  
A. Duibha ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
J. W. Lee ◽  
P. H. Holloway ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Electron Spectroscopy ◽  
Ohmic Contacts ◽  
Electrical Characteristics ◽  
Microstructural Properties ◽  
Excellent Thermal Stability ◽  
Annealing Temperatures ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
Thermal Stability Of

ABSTRACTThe microstructural properties and interdiffusion reactions of Au/Ge/Ni, Ti/Pt/Au, WSix and AuBe contacts on GaN and In0.5Ga0.5N have been examined using Scanning Electron Microscopy and Auger Electron Spectroscopy. The WSix contacts possess excellent thermal stability and retained good structural properties at annealing temperatures as high as 800°C on GaN. The electrical characteristics of WSix contacts on In0.5Ga0.5N had a specific contact resistivity of 1.48×10−5Ωcm2 and an excellent surface morphology following annealing at 700°C. The increase in contact resistance observed at higher temperatures was attributed to intermixing of metal and semiconductor. In contrast the Ti/Pt/Au and Au/Ge/Ni contacts were stable only to ≤ 500°C. AuBe contacts had the poorest thermal stability, with substantial reaction with GaN occurring even at 400°C. The WSix contact appears to be an excellent choice for high temperature GaN electronics applications.

Optimization of Pd/Zn/Pd/Au Ohmic Contacts to p-Type inGaAs/ InP

1994 ◽  
Vol 337 ◽  
Author(s):  
Patrick W Leech ◽  
Geoffrey K. Reeves
Keyword(s):  
Thermal Stability ◽  
Electrical Properties ◽  
Contact Resistance ◽  
Ohmic Contacts ◽  
Critical Thickness ◽  
Specific Contact Resistance ◽  
Zn Doping ◽  
Specific Contact ◽  
P Type ◽  
Thermal Stability Of

ABSTRACTThe electrical properties of Pd/Zn/Pd/Au based ohmic contacts to p-type In0 47Ga0 53As/ InP with an interposed superlattice of 50Å In047Gao 53As/ 50 Å InP have been investigated. In this study, several configurations of the Pd/Zn/Pd/Au metallization were fabricated with varying thicknesses of the Zn and interfacial Pd layers in the range 0 to 400 Å. The lowest values of specific contact resistance, ρc, were 1.2 x 10-5 Ω cm2 as-deposited and 7.5 x 106 Ω cm2 for samples annealed at 500 °C. In the as-deposited structures, ρc was reduced by an increase in thickness of both the Zn and Pd layers to 300 Å. For annealed samples, a critical thickness of the Zn ≥ 50 Å and Pd ≥ 100 Å layers was required in order to significantly reduce the magnitude of ρc. These results are consistent with a model of Pd/Zn contacts based on Zn doping of the interface. Studies of thermal stability of the contacts at 400 °C and 500 °C have shown that the Zn/Pd/Au and Pd/Zn/Pd/Au configurations were significanty lower in ρc at extended ageing times than the Pd/Au contacts.

Improved light reflectance and thermal stability of Ag-based ohmic contacts on p-type GaN with La additive

2013 ◽  
Vol 57 ◽  
pp. 51-57 ◽  
Author(s):  
I-Chen Chen ◽  
Bo-Yuan Cheng ◽  
Wen-Cheng Ke ◽  
Cheng-Huang Kuo ◽  
Li-Chuan Chang
Keyword(s):  
Thermal Stability ◽  
Ohmic Contacts ◽  
Light Reflectance ◽  
P Type ◽  
Thermal Stability Of

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

scholarly journals Influences of Bath Chemistry and Plating Variables on Characteristics of Electroless Ni–P Films on Si Wafers from Alkaline Citrate Solutions

2018 ◽  
Vol 2018 ◽  
pp. 1-11 ◽  
Author(s):  
Naiming Miao ◽  
Jinjin Jiang ◽  
Wangping Wu
Keyword(s):  
Thermal Stability ◽  
Chemical Composition ◽  
Deposition Rate ◽  
Electroless Nickel ◽  
Monocrystalline Silicon ◽  
P Content ◽  
Almost All ◽  
P Type ◽  
Electroless Ni ◽  
Thermal Stability Of

Electroless nickel–phosphorus (Ni–P) films were produced on the surface of p-type monocrystalline silicon in the alkaline citrate solutions. The influences of bath chemistry and plating variables on the chemical composition, deposition rate, morphology, and thermal stability of electroless Ni–P films on silicon wafers were studied. The as-deposited Ni–P films were almost all medium- and high-P deposits. The concentrations of Ni2+ and citric ions influenced the deposition rate of the films but did not affect P content in the deposits. With increasing H2PO2− content, the P content and deposition rate were steadily increased. The pH and plating temperature had a significant effect on the chemical composition and the deposition rate of the films. The thermal stability of the medium-P film was better than that of the high-P deposit. At the same time, the proposed mechanism of Ni–P films on monocrystalline silicon substrates in the alkaline bath solution was discussed and addressed.

Thermal Stability of Solid Aluminum Electrolytic Capacitors with Conductive Polyaniline Counter Electrode

2012 ◽  
Vol 512-515 ◽  
pp. 1018-1021
Author(s):  
Xu Fei Zhu ◽  
Long Fei Jiang ◽  
Wei Xing Qi ◽  
Chao Lu ◽  
Ye Song
Keyword(s):  
Thermal Stability ◽  
Counter Electrode ◽  
Electrolytic Capacitor ◽  
Aluminum Electrolytic Capacitor ◽  
Dodecylbenzenesulfonic Acid ◽  
Excellent Thermal Stability ◽  
High Frequencies ◽  
Solid Aluminum ◽  
Good Thermal Stability ◽  
Thermal Stability Of

To overcome the risk of electrolyte leakage and the shortcoming of higher impedance at high frequencies for the conventional aluminum electrolytic capacitor impregnated with electrolyte solutions, solid aluminum electrolytic capacitor employing conducting polyaniline (PANI) as a counter electrode was developed. The as-fabricated solid capacitors have very low impedances at high frequencies and excellent thermal stability. The superior performances can be ascribed to high conductivity and good thermal stability of the camphorsulfonic acid (CSA)-dodecylbenzenesulfonic acid (DBSA) co-doped PANI.

Thermal stability of WAlN/WAlON/Al2O3-based solar selective absorber coating

MRS Advances ◽  
2016 ◽  
Vol 1 (41) ◽  
pp. 2807-2813 ◽  
Author(s):  
Atasi Dan ◽  
Kamanio Chattopadhyay ◽  
Harish C. Barshilia ◽  
Bikramjit Basu
Keyword(s):  
Thermal Stability ◽  
Stainless Steel ◽  
Stainless Steel Substrate ◽  
Steel Substrate ◽  
Rf Magnetron Sputtering ◽  
Thermal Conversion ◽  
Solar Absorptance ◽  
Excellent Thermal Stability ◽  
Oxidation In Air ◽  
Thermal Stability Of

AbstractThe solar absorptance property of W/WAlN/WAlON/Al2O3-based coatings, deposited by DC/RF magnetron sputtering on stainless steel substrate was studied by measuring the reflectance spectra in the wavelength range of 250 - 2500 nm. The effect of thermal annealing on the optical properties of the solar selective absorber coatings was investigated. Annealing the coatings at 450°C for 150 hrs in air did not show any significant change in the spectral properties of the absorber coating indicating the excellent thermal stability of the coating. The W layer acts as infrared reflective layer and diffusion barrier on stainless steel substrate. The top Al2O3 layer serves as dense shield to protect the under layers from oxidation in air. In summary, the present study indicates the potential application of W/WAlN/WAlON/Al2O3-based selective coatings in high temperature photo thermal conversion systems.

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