Nanocrystalline Si/SiO2 core-shell network with intense white light emission fabricated by hot-wire chemical vapor deposition

This work demonstrated a growth of well-aligned NiSi/SiC core-shell nanowires by a one-step process of hot-wire chemical vapor deposition on Ni-coated crystal silicon substrates at different thicknesses. The NiSi nanoparticles (60 to 207 nm) acted as nano-templates to initially inducing the growth of these core-shell nanowires. These core-shell nanowires were structured by single crystalline NiSi and amorphous SiC as the cores and shells of the nanowires, respectively. It is proposed that the precipitation of the NiSi/SiC are followed according to the nucleation limited silicide reaction and the surface-migration respectively for these core-shell nanowires. The electrical performance of the grown NiSi/SiC core-shell nanowires was characterized by the conducting AFM and it is found that the measured conductivities of the nanowires were higher than the reported works that might be enhanced by SiC shell layer on NiSi nanowires. The high conductivity of NiSi/SiC core-shell nanowires could potentially improve the electrical performance of the nanowires-based devices for harsh environment applications such as field effect transistors, field emitters, space sensors, and electrochemical devices.

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Photo- and Electroluminescence of Hydrogenated Nanocrystalline Si Prepared by Plasma Enhanced Chemical Vapor Deposition Techniques

Materials Science Forum ◽

10.4028/www.scientific.net/msf.510-511.958 ◽

2006 ◽

Vol 510-511 ◽

pp. 958-961 ◽

Cited By ~ 1

Author(s):

Jae Hyun Shim ◽

Nam Hee Cho

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Light Emission ◽

Chemical Vapor ◽

Maximum Intensity ◽

Pl Spectra ◽

Quantum Confinement Effects ◽

P Type ◽

Hydrogenated Amorphous ◽

Nanocrystalline Si

We studied photoluminescence (PL) and electroluminescence (EL) properties of hydrogenated nanocystalline silicon (nc-Si:H) thin films prepared by applying the plasma enhanced chemical vapor deposition (PECVD) techniques. . A prototype of ITO/nc-Si:H/P-type Si wafer/Al EL devices was illustrated with its fundamental electrical and optical features. The nc-Si:H films exhibited PL spectra in a wavelength range of 350 ~ 700 nm with the maximum intensity at ~ 530 nm, which is attributed to quantum confinement effects (QCE) owing to the presence of nanocrystalline Si. The EL device produced EL spectra with their maximum intensity at ~ 525 nm which are similar to the PL spectra. The light emission is attributed to radiative recombination related to nanocrystalline Si contained in the hydrogenated amorphous Si (a-Si:H).

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Study of the growth, and effects of filament to substrate distance on the structural and optical properties of Si/SiC core–shell nanowires synthesized by hot-wire chemical vapor deposition

Materials Chemistry and Physics ◽

10.1016/j.matchemphys.2014.06.045 ◽

2014 ◽

Vol 147 (3) ◽

pp. 974-981 ◽

Cited By ~ 14

Author(s):

Boon Tong Goh ◽

Saadah Abdul Rahman

Keyword(s):

Optical Properties ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Core Shell ◽

Hot Wire ◽

Structural And Optical Properties ◽

Substrate Distance ◽

Shell Nanowires

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High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.10(3).03001 ◽

2018 ◽

Vol 10 (3) ◽

pp. 03001-1-03001-6 ◽

Cited By ~ 2

Author(s):

Bharat Gabhale ◽

◽

Ashok Jadhawar ◽

Ajinkya Bhorde ◽

Shruthi Nair ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Tungsten Carbide ◽

Band Gap ◽

Vapor Deposition ◽

Chemical Vapor ◽

Hot Wire ◽

Cvd Method ◽

High Band

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Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽

10.3390/cryst10040237 ◽

2020 ◽

Vol 10 (4) ◽

pp. 237

Author(s):

M. Abul Hossion ◽

B. M. Arora

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Polycrystalline Silicon ◽

Silicon Film ◽

Chemical Vapor ◽

Hot Wire ◽

Deposition Technique ◽

Boron Doped ◽

Vapor Deposition Technique ◽

Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

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