Growth and structural property studies on NiSi/SiC core-shell nanowires by hot-wire chemical vapor deposition

2014 ◽  
Vol 570 ◽  
pp. 243-248 ◽  
Author(s):  
Nur Fatin Farhanah Binti Nazarudin ◽  
Siti Nur Azieani Binti Azizan ◽  
Saadah Abdul Rahman ◽  
Boon Tong Goh
Keyword(s):  
Chemical Vapor Deposition ◽  
Structural Property ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Core Shell ◽  
Hot Wire ◽  
Shell Nanowires

scholarly journals Solid-State Limited Nucleation of NiSi/SiC Core-Shell Nanowires by Hot-Wire Chemical Vapor Deposition

Materials ◽  
2019 ◽  
Vol 12 (4) ◽  
pp. 674 ◽  
Author(s):  
Mahdi Alizadeh ◽  
Najwa binti Hamzan ◽  
Poh Choon Ooi ◽  
Muhammad Firdaus bin Omar ◽  
Chang Fu Dee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Electrical Performance ◽  
Core Shell ◽  
Hot Wire ◽  
Crystal Silicon ◽  
Surface Migration ◽  
Shell Nanowires

This work demonstrated a growth of well-aligned NiSi/SiC core-shell nanowires by a one-step process of hot-wire chemical vapor deposition on Ni-coated crystal silicon substrates at different thicknesses. The NiSi nanoparticles (60 to 207 nm) acted as nano-templates to initially inducing the growth of these core-shell nanowires. These core-shell nanowires were structured by single crystalline NiSi and amorphous SiC as the cores and shells of the nanowires, respectively. It is proposed that the precipitation of the NiSi/SiC are followed according to the nucleation limited silicide reaction and the surface-migration respectively for these core-shell nanowires. The electrical performance of the grown NiSi/SiC core-shell nanowires was characterized by the conducting AFM and it is found that the measured conductivities of the nanowires were higher than the reported works that might be enhanced by SiC shell layer on NiSi nanowires. The high conductivity of NiSi/SiC core-shell nanowires could potentially improve the electrical performance of the nanowires-based devices for harsh environment applications such as field effect transistors, field emitters, space sensors, and electrochemical devices.

Nanocrystalline Si/SiO2 core-shell network with intense white light emission fabricated by hot-wire chemical vapor deposition

2015 ◽  
Vol 106 (17) ◽  
pp. 171912 ◽  
Author(s):  
Y. Matsumoto ◽  
A. Dutt ◽  
G. Santana-Rodríguez ◽  
J. Santoyo-Salazar ◽  
M. Aceves-Mijares
Keyword(s):  
Chemical Vapor Deposition ◽  
White Light ◽  
Vapor Deposition ◽  
Light Emission ◽  
Chemical Vapor ◽  
White Light Emission ◽  
Core Shell ◽  
Hot Wire ◽  
Nanocrystalline Si

scholarly journals InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition

2017 ◽  
Vol 864 ◽  
pp. 012001
Author(s):  
Xianghai Ji ◽  
Xiaoguang Yang ◽  
Wenna Du ◽  
Huayong Pan ◽  
Shuai Luo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Core Shell ◽  
Si Substrates ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Shell Nanowires

scholarly journals Phase Change Ge-Rich Ge–Sb–Te/Sb2Te3 Core-Shell Nanowires by Metal Organic Chemical Vapor Deposition

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3358
Author(s):  
Arun Kumar ◽  
Raimondo Cecchini ◽  
Claudia Wiemer ◽  
Valentina Mussi ◽  
Sara De Simone ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Core Shell ◽  
The Core ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Shell Nanowires

Ge-rich Ge–Sb–Te compounds are attractive materials for future phase change memories due to their greater crystallization temperature as it provides a wide range of applications. Herein, we report the self-assembled Ge-rich Ge–Sb–Te/Sb2Te3 core-shell nanowires grown by metal-organic chemical vapor deposition. The core Ge-rich Ge–Sb–Te nanowires were self-assembled through the vapor–liquid–solid mechanism, catalyzed by Au nanoparticles on Si (100) and SiO2/Si substrates; conformal overgrowth of the Sb2Te3 shell was subsequently performed at room temperature to realize the core-shell heterostructures. Both Ge-rich Ge–Sb–Te core and Ge-rich Ge–Sb–Te/Sb2Te3 core-shell nanowires were extensively characterized by means of scanning electron microscopy, high resolution transmission electron microscopy, X-ray diffraction, Raman microspectroscopy, and electron energy loss spectroscopy to analyze the surface morphology, crystalline structure, vibrational properties, and elemental composition.

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