Combinatorial optimization of atomically controlled growth for oxide films by the carrousel type laser molecular beam epitaxy

2001 ◽  
Vol 700 ◽  
Author(s):  
R. Takahashi ◽  
Y. Matsumoto ◽  
H. Koinuma ◽  
M. Lippmaa ◽  
M. Kawasaki
Keyword(s):  
Molecular Beam ◽  
Ybco Film ◽  
High Sensitivity ◽  
High Energy ◽  
In Situ Monitoring ◽  
Laser Deposition ◽  
Crystal Habit ◽  
Laser Focusing ◽  
The One

AbstractA new combinatorial pulsed laser deposition system has been developed for rapid optimization of epitaxial growth process by using a carrousel type masking plate. Under in-situ monitoring of growing surface with reflection high energy electron diffraction, eight films with different compositions or preparation parameters can be fabricated on a single substrate. By using this system, we have succeeded in the one lot optimization of YBa2Cu3O7-d(YBCO), PrGaO3, SrO and BaO film growths on the B-site (TiO2) terminated SrTiO3(001) substrates. Key results from these experiments include the high sensitivity of YBCO film crystallinity to the laser focusing as well as of growth behavior of epitaxial SrO and BaO films to the crystal habit with the underlying atomic layers.

In-situ monitoring by reflective high energy electron diffraction during pulsed laser deposition

1999 ◽  
Vol 138-139 ◽  
pp. 17-23 ◽  
Author(s):  
Dave H.A Blank ◽  
Guus J.H.M Rijnders ◽  
Gertjan Koster ◽  
Horst Rogalla
Keyword(s):  
Electron Diffraction ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Energy ◽  
Energy Electron ◽  
In Situ Monitoring ◽  
Laser Deposition ◽  
High Energy Electron

In Situ Simulation by RHEED and Photoemission of GaAs (001) β2(2x4) Reconstructed Surface

2011 ◽  
Vol 312-315 ◽  
pp. 132-137
Author(s):  
Hamid Khachab ◽  
Yamani Abdelkafi ◽  
Abderrahmane Belghachi
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
High Energy ◽  
Atomic Scale ◽  
In Situ Monitoring ◽  
High Energy Electron ◽  
Precise Control ◽  
Homoepitaxial Growth ◽  
Reconstructed Surface

In situ monitoring of surface processes and understanding of growth processes are important in achieving precise control of crystal growth. Therefore, many surface monitoring techniques are used during crystal growth by molecular beam epitaxy (MBE). The most popular is reflection high-energy electron diffraction (RHEED) and photoemission current which provides information on the morphology during the growing surface. The photoemission oscillation technique has been successfully used in situ to monitor the growth of materials and to control the thickness as well as the roughness of the deposited layer. In this paper, we report results of atomic scale simulations used to study the dynamics of homoepitaxial growth of GaAs(001) β2(2x4) reconstructed surface and, in particular, the RHEED oscillations of the photoemission current.

Rheed Intensity Monitored Growth of Bi-Sr-Ca-Cu-O Superconductors

1992 ◽  
Vol 275 ◽  
Author(s):  
Shigeki Sakai ◽  
Yuji Kasai ◽  
Peter Bodin ◽  
Hirofumi Matsuhata
Keyword(s):  
Electron Diffraction ◽  
Growth Process ◽  
Molecular Beam ◽  
Superconducting Films ◽  
High Energy ◽  
Energy Electron ◽  
In Situ Monitoring ◽  
High Energy Electron ◽  
Image Enhancing

ABSTRACTTo make Bi2Sr2CaCu2O8 superconducting films with top insulating SrTiO3, we use the molecular beam epitaxy technique (MBE) with in situ monitoring by reflection high-energy electron diffraction (RHEED). A new (RHEED)image enhancing technique, difference reflection high-energy electron diffraction (DRHEED) gave striking information on the growth process of each layer in the Bi:2212 compound as well as the rough and flat transition occurring during co-evaporated deposition of SrTi03.

A Study on the Growth of Cubic GaN Films Using an AlGaAs Buffer Layer Grown on GaAs (100) by Plasma-Assisted Molecular Beam Epitaxy

2000 ◽  
Vol 639 ◽  
Author(s):  
Ryuhei Kimura ◽  
Kiyoshi Takahashi ◽  
H. T. Grahn
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
High Energy ◽  
Rf Plasma ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Gan

ABSTRACTAn investigation of the growth mechanism for RF-plasma assisted molecular beam epitaxy of cubic GaN films using a nitrided AlGaAs buffer layer was carried out by in-situ reflection high energy electron diffraction (RHEED) and high resolution X-ray diffraction (HRXRD). It was found that hexagonal GaN nuclei grow on (1, 1, 1) facets during nitridation of the AlGaAs buffer layer, but a highly pure, cubic-phase GaN epilayer was grown on the nitrided AlGaAs buffer layer.

In Situ Monitoring of the Smear-Out of the Ge Profile in GAS Source SiGe MBE Using Rheed Intensity Oscillations

1992 ◽  
Vol 263 ◽  
Author(s):  
K. Werner ◽  
S. Butzke ◽  
J.W. Maes ◽  
O.F.Z. Schannen ◽  
J. Trommel ◽  
...  
Keyword(s):  
Growth Rate ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Catalytic Effect ◽  
Growth Conditions ◽  
In Situ Monitoring ◽  
Marked Contrast ◽  
Si Substrates ◽  
Gas Source

ABSTRACTWe have studied the deposition of GexSi1−x layers on (100) Si substrates by gas source molecular beam epitaxy (GSMBE) using disilane and germane.The investigation of RHEED intensity oscillations during growth reveals the well known rate enhancement obtained when adding a small amount of germane to the disilane flux. However, when exposing a previously deposited Ge layer to a pure disilane flux the growth rate during the first few monolayers remains at an enhanced value but returns to its homoepitaxial value after about 10 to 15 monolayers. This behaviour was observed under a variety of growth conditions. It is in marked contrast to the experience obtained in conventional Si/Ge MBE and suggests a catalytic effect of the particular surface present during GSMBE growth. We propose that this effect is caused by the surface segregation of Ge species and leads to a smear-out of the Ge profile in the layer.

In situ monitoring of electrical resistivity and plasma during pulsed laser deposition growth of ultra-thin silver films

2021 ◽  
Vol 130 (8) ◽  
pp. 085301
Author(s):  
M. Novotný ◽  
P. Fitl ◽  
S. A. Irimiciuc ◽  
J. Bulíř ◽  
J. More-Chevalier ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
In Situ Monitoring ◽  
Laser Deposition ◽  
Silver Films
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