Fabrication of hetero-junction diode using NiO thin film on ITO/glass substrate

2016 ◽  
Author(s):  
Sonali Soni ◽  
Vinay Sharma ◽  
Bijoy K. Kuanr
2014 ◽  
Vol 2 (46) ◽  
pp. 19867-19872 ◽  
Author(s):  
Chang Woo Kim ◽  
Young Seok Son ◽  
Amol Uttam Pawar ◽  
Myoung Jong Kang ◽  
Jin You Zheng ◽  
...  

A one axis-oriented p-type NiO monolayer film with a (111) dominant facet on ITO glass was fabricated for use as a photocathodic electrode.


2019 ◽  
Vol 290 ◽  
pp. 199-207 ◽  
Author(s):  
Dauda Abubakar ◽  
Naser Mahmoud Ahmed ◽  
Shahrom Mahmud

The study is based on the use of NiO as an extended gate of field effect transistor (EGFET) using ITO/glass as a substrate for the sensitivity of pH sensor membrane. The NiO thin film was synthesis by wet and dry thermal oxidation method of Nickel metal thin film deposited by RF sputtering. The sensitivity of the NiO membrane was measured and comparatively analysed against the two different oxidation methods. Structural and morphological properties were investigated for both thin films. The sensitivities measurements of the two membranes were made as pH sensors. The results confirmed that NiO membrane grown by dry oxidation had much better sensitivity (87 μA/pH and 54 mV/pH) compared to wet oxidation membrane sample (52 μA/pH and 48 mV/pH).


2005 ◽  
Vol 114 (3-4) ◽  
pp. 227-233 ◽  
Author(s):  
Sung Mook Chung ◽  
Sang Hyuk Han ◽  
Kuk Hyun Song ◽  
Eung Soo Kim ◽  
Young Jin Kim

2015 ◽  
Vol 11 (5) ◽  
pp. 430-437 ◽  
Author(s):  
Jung-Chuan Chou ◽  
Cheng-Jung Yang ◽  
Yi-Hung Liao ◽  
Pei-An Ho ◽  
Hsueh-Tao Chou ◽  
...  

2013 ◽  
Vol 770 ◽  
pp. 315-318
Author(s):  
A. Sansomboon ◽  
T. Jungwon ◽  
P. Pasitsuparoad ◽  
K. Subannajui ◽  
T. Osotchan

Multilayer poly (3-hexylthiophene)-CNT/C60 thin films on ITO glass substrate was fabricated regarding to the function of each layer. Poly (3-hexylthiophene) (P3HT) is used as a donor layer and fullerene (C60) is used as an acceptor layer of the device. The carbon-nanotube (CNT) is homogeneously mixed in the donor layer to increase charge transportability. The structures of poly (3-hexylthiophene), poly (3-hexylthiophene)-CNT were fabricated in comparison of poly (3-hexylthiophene)-CNT/C60 thin films. The P3HT-CNT bulk heterojunction was deposited on ITO glass substrate by spin coating technique and then the C60 thin film was deposited on the P3HT by thermal evaporating technique. The I-V characteristic of ITO/P3HT-CNT/Al and ITO/P3HT-CNT/C60/Al were investigated in the monochromatic light. The result showed that the ITO/P3HT-CNT/Al structures respond with red and green light, and the ITO/P3HT-CNT/C60/Al structure responds with blue light. The UV absorption was measured and the result was consistence with the I-V characterization.


Author(s):  
Jagadeesh Babu Bellam ◽  
Gangadhar Kandikunta ◽  
Bhargavi Manupati ◽  
Saha Debabrata ◽  
PP. George ◽  
...  

2006 ◽  
Vol 301 ◽  
pp. 41-44 ◽  
Author(s):  
Tomoya Ohno ◽  
Masayuki Fujimoto ◽  
Hisao Suzuki

This paper describes the deposition of PZT thin films on soda-lime glass substrate with ITO bottom electrode by CSD (Chemical Solution Deposition). The transmittance of the obtained PZT thin film on ITO/glass substrate was about 60 % in the visible light region. The deposited transparent PZT thin film exhibited the ferroelectricity of Pr=36.3 μC/cm2 and Ec=71.3 kV/cm. In addition, the piezoelectric property of the resultant PZT thin film was relatively large and exhibited the measured effective d33 of 120 pC/N after the polarization.


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