Facile fabrication and photoelectrochemical properties of a one axis-oriented NiO thin film with a (111) dominant facet

2014 ◽  
Vol 2 (46) ◽  
pp. 19867-19872 ◽  
Author(s):  
Chang Woo Kim ◽  
Young Seok Son ◽  
Amol Uttam Pawar ◽  
Myoung Jong Kang ◽  
Jin You Zheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectrochemical Properties ◽  
Monolayer Film ◽  
Ito Glass ◽  
Nio Thin Film ◽  
Facile Fabrication ◽  
P Type

A one axis-oriented p-type NiO monolayer film with a (111) dominant facet on ITO glass was fabricated for use as a photocathodic electrode.

scholarly journals Correction: Facile fabrication and photoelectrochemical properties of a one axis-oriented NiO thin film with a (111) dominant facet

2015 ◽  
Vol 3 (1) ◽  
pp. 447-447 ◽  
Author(s):  
Chang Woo Kim ◽  
Young Seok Son ◽  
Amol Uttam Pawar ◽  
Myung Jong Kang ◽  
Jin You Zheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Photoelectrochemical Properties ◽  
Nio Thin Film ◽  
Facile Fabrication

Correction for ‘Facile fabrication and photoelectrochemical properties of a one axis-oriented NiO thin film with a (111) dominant facet’ by Chang Woo Kim et al., J. Mater. Chem. A, 2014, 2, 19867–19872.

The Study on the Effect of Wet and Dry Oxidation of Nickel Thin Film on Sensitivity of EGFET Based pH Sensor

2019 ◽  
Vol 290 ◽  
pp. 199-207 ◽  
Author(s):  
Dauda Abubakar ◽  
Naser Mahmoud Ahmed ◽  
Shahrom Mahmud
Keyword(s):  
Thin Film ◽  
Ph Sensor ◽  
Rf Sputtering ◽  
Morphological Properties ◽  
Nickel Metal ◽  
Sensor Membrane ◽  
Ito Glass ◽  
Dry Oxidation ◽  
Nio Thin Film ◽  
Membrane Sample

The study is based on the use of NiO as an extended gate of field effect transistor (EGFET) using ITO/glass as a substrate for the sensitivity of pH sensor membrane. The NiO thin film was synthesis by wet and dry thermal oxidation method of Nickel metal thin film deposited by RF sputtering. The sensitivity of the NiO membrane was measured and comparatively analysed against the two different oxidation methods. Structural and morphological properties were investigated for both thin films. The sensitivities measurements of the two membranes were made as pH sensors. The results confirmed that NiO membrane grown by dry oxidation had much better sensitivity (87 μA/pH and 54 mV/pH) compared to wet oxidation membrane sample (52 μA/pH and 48 mV/pH).

Resistive Switching and Current Conduction for Thermally Grown NiO Thin Film

2011 ◽  
Vol 687 ◽  
pp. 163-166 ◽  
Author(s):  
Chun Hung Lai ◽  
Chia Hung Chen ◽  
Chih Yi Liu
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Resistive Switching ◽  
High Resistance State ◽  
Positive Temperature ◽  
Ohmic Behavior ◽  
Current Voltage ◽  
Nio Thin Film ◽  
Resistance State ◽  
P Type

The unipolar resistive switching (URS) properties were investigated for NiO thin film prepared by thermal oxidation of the deposited Ni layer on Pt substrate. The turn-on voltage (Vset) shows apparent variation, at which switching from a high-resistance state (off) to a low-resistance state (on) occurs. The formation and rupture of a conducting channel are commonly proposed to explain the bistable conduction states, so called the filament model. The Vset polarity and instability are discussed in the light of the filament model and the results agree with the p-type carriers known in NiO film. Current-voltage data of the on-state conduction in full-log scale follow the ohmic behavior and the temperature dependence shows the relatively stable essence. The off-state current displays space-charge limited (SCL) relation at higher field and reveals a positive temperature dependence. The dominance of the off-state conduction for resistance swtich effect is emphasized and analyzed using the impedance spectroscopy.

Investigation of optical, electronic, and magnetic properties of p-type NiO thin film on different substrates

2021 ◽  
pp. 138800
Author(s):  
Dogan Kaya ◽  
Hafize Seda Aydınoğlu ◽  
Ebru Şenadım Tüzemen ◽  
Ahmet Ekicibil
Keyword(s):  
Thin Film ◽  
Magnetic Properties ◽  
Electronic And Magnetic Properties ◽  
Nio Thin Film ◽  
P Type

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

Thermodynamics and Microstructure Development in the Thin Film Reaction of Aluminum on Silicon Carbide

1995 ◽  
Vol 403 ◽  
Author(s):  
T. S. Hayes ◽  
F. T. Ray ◽  
K. P. Trumble ◽  
E. P. Kvam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Ohmic Contacts ◽  
Microstructure Development ◽  
P Type ◽  
Microstructural Studies

AbstractA refined thernodynamic analysis of the reaction between molen Al and SiC is presented. The calculations indicate much higher Si concentrations for saturation with respect to AkC 3 formation than previously reported. Preliminary microstructural studies confirm the formation of interfacial A14C3 for pure Al thin films on SiC reacted at 9000C. The implications of the calculations and experimental observations for the production of ohmic contacts to p-type SiC are discussed.

scholarly journals A Multi Objective Evolutionary Algorithm for the Parameters Extraction of Organic Thin Film Transistors Models

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 939
Author(s):  
Rosario Schiano Lo Moriello ◽  
Davide Ruggiero ◽  
Leopoldo Angrisani ◽  
Enzo Caputo ◽  
Francesco de Pandi ◽  
...  
Keyword(s):  
Thin Film ◽  
Evolutionary Algorithm ◽  
Design Stage ◽  
Model Parameters ◽  
Organic Transistors ◽  
Organic Thin Film ◽  
Multi Objective ◽  
Application Fields ◽  
Channel Lengths ◽  
P Type

Thanks to their peculiar features, organic transistors are proving to be a valuable alternative to traditional semiconducting devices in several application fields; however, before releasing their exploitation, simulating their behaviour through adequate circuital models could be advisable during the design stage of electronic circuits and/or boards. Consequently, accurately extracting the parameter value of those models is fundamental to developing useful libraries for hardware design environments. To face the considered problem, the authors present a method based on successive application of Single- and Multi-Objective Evolutionary Algorithm for the optimal tuning of model parameters of organic transistors on thin film (OTFT). In particular, parameters are first roughly estimated to assure the best fit with the experimental transfer characteristics; the estimates are successively refined through the multi-objective strategy by also matching the values of the experimental mobility. The performance of the method has been assessed by estimating the parameters value of both P-type and N-type OTFTs characterized by different values of channel lengths; the obtained results evidence that the proposed method can obtain suitable parameters values for all the considered channel lengths.

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