Ultrahigh-temperature rapid thermal oxidation of 4H-SiC(0001) surfaces and oxidation temperature dependence of SiO2/SiC interface properties

This paper reviews our recent work on ultrahigh-temperature oxidation of 4H-SiC(0001) surfaces. Our rapid thermal oxidation experiments demonstrated the reaction-limited linear growth at temperatures ranging from 1200 to 1600°C. The Arrhenius plot of linear growth rate of thermal oxidation can be fitted by a linear line, and the activation energy of oxide growth in dry O2 oxidation was estimated to be 2.9 eV. We also found that unintentional oxidation during the cooling down process severely degrades SiO2/SiC interface properties, resulting in positive flatband voltage shift (VFB) and hysteresis in capacitance-voltage (C-V) characteristics regardless of oxidation temperature. By effectively suppressing oxide growth during the cooling process, we have clarified that SiO2/SiC interface properties depend on oxidation temperature and the lowest interface state density was obtained for the oxide formed at 1450°C.

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Control of grown-in defects and oxygen precipitates in silicon wafers with DZ-IG structure by ultrahigh-temperature rapid thermal oxidation

Journal of Applied Physics ◽

10.1063/1.5011243 ◽

2018 ◽

Vol 123 (16) ◽

pp. 161591 ◽

Cited By ~ 4

Author(s):

Susumu Maeda ◽

Haruo Sudo ◽

Hideyuki Okamura ◽

Kozo Nakamura ◽

Koji Sueoka ◽

...

Keyword(s):

Thermal Oxidation ◽

Silicon Wafers ◽

Rapid Thermal Oxidation ◽

Ultrahigh Temperature ◽

Oxygen Precipitates

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SURFACE MORPHOLOGY AND X-RAY DIFFRACTION ANALYSIS FOR SILICON NANOCRYSTAL-BASED HETEROSTRUCTURES

Surface Review and Letters ◽

10.1142/s0218625x13500467 ◽

2013 ◽

Vol 20 (05) ◽

pp. 1350046 ◽

Cited By ~ 15

Author(s):

EVAN T. SALIM

Keyword(s):

Surface Morphology ◽

Thermal Oxidation ◽

Oxidation Process ◽

Oxidation Temperature ◽

Silicon Nanocrystal ◽

X Ray Diffraction ◽

X Ray ◽

Rapid Thermal Oxidation ◽

O Phase ◽

Thermal Oxidation Process

In this work, we studied the effect of rapid thermal oxidation process on the structural and surface morphology of silicon nanocrystal-based heterostructures. PLD technique was employed in combination with rapid thermal oxidation process to form multilayers heterostructures. Results show the dependence of the surface roughness and structure on the oxidation temperature. Best surface morphology was achieved at 723 K oxidation temperature, at which, the X-ray diffraction result ensured the formation of the Cu 2 O phase at (111) and (002) diffraction plain with uniform porous surface.

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Thermal oxidation temperature dependence of 4H-SiC MOS interface

Applied Surface Science ◽

10.1016/j.apsusc.2006.04.054 ◽

2006 ◽

Vol 253 (5) ◽

pp. 2416-2420 ◽

Cited By ~ 44

Author(s):

Hirofumi Kurimoto ◽

Kaoru Shibata ◽

Chiharu Kimura ◽

Hidemitsu Aoki ◽

Takashi Sugino

Keyword(s):

Temperature Dependence ◽

Thermal Oxidation ◽

Oxidation Temperature

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HCL Oxidation of High Dose Arsenic Implanted Silicon

MRS Proceedings ◽

10.1557/proc-54-567 ◽

1985 ◽

Vol 54 ◽

Author(s):

Seong Soo Choi ◽

M. Z. Numan ◽

T. G. Finstad ◽

W. K. Chu ◽

D. Fathy

Keyword(s):

Pattern Formation ◽

Temperature Dependence ◽

Thermal Oxidation ◽

Oxidation Rate ◽

Arsenic Concentration ◽

Oxidation Temperature ◽

High Dose ◽

P Type

ABSTRACTThermal oxidation of high dose arsenic implanted p-type <100> silicon has been performed in order to study arsenic snowplowing. Bubble pattern formation and local oxide bowing (mound) in relation to the arsenic concentration in silicon as well as an HC1 ambient have been observed for an oxidation temperature of 1050°C. Oxide peel off at an oxidation temperature of 950°C for an atmosphere with an HC1 ambient has been observed. In addition, an anomaly in the temperature dependence of the oxidation rate independent of an HC1 ambient has been found.

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Interface properties of the Si(100)–SiO2 system formed by rapid thermal oxidation

Microelectronics Reliability ◽

10.1016/s0026-2714(99)00270-x ◽

2000 ◽

Vol 40 (4-5) ◽

pp. 645-648 ◽

Cited By ~ 5

Author(s):

B.J O’Sullivan ◽

P.K Hurley ◽

A Mathewson ◽

J.H Das ◽

A.D Daniel

Keyword(s):

Thermal Oxidation ◽

Interface Properties ◽

Sio2 System ◽

Rapid Thermal Oxidation

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Improved reliability characteristics of submicrometer nMOSFETs with oxynitride gate dielectric prepared by rapid thermal oxidation in N/sub 2/O

IEEE Electron Device Letters ◽

10.1109/55.116929 ◽

1991 ◽

Vol 12 (9) ◽

pp. 495-497 ◽

Cited By ~ 41

Author(s):

H. Hwang ◽

W. Ting ◽

D.-L. Kwong ◽

J. Lee

Keyword(s):

Thermal Oxidation ◽

Gate Dielectric ◽

Rapid Thermal Oxidation ◽

Reliability Characteristics

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Rapid Thermal Oxidation of Lightly Doped Silicon in N2O

MRS Proceedings ◽

10.1557/proc-342-181 ◽

1994 ◽

Vol 342 ◽

Cited By ~ 4

Author(s):

S.C. Sun ◽

L.S. Wang ◽

F.L. Yeh ◽

T.S. Lai ◽

Y.H. Lin

Keyword(s):

Growth Rate ◽

Thermal Oxidation ◽

Charge Trapping ◽

Interface State ◽

Constant Current ◽

Mos Capacitor ◽

Rapid Thermal Oxidation ◽

Doped Silicon ◽

State Generation ◽

First Time

ABSTRACTIn this paper, a detailed study is presented for the growth kinetics of rapid thermal oxidation of lightly-doped silicon in N2O and O2 on (100), (110), and (111) oriented substrates. It was found that (110)-oriented Si has the highest growth rate in both N2O and dry O2, and (100) Si has the lowest rate. There is no “crossover” on the growth rate of rapid thermal N2O oxidation between (110) Si and (111) Si as compared to oxides grown in furnace N2O. Pressure dependence of rapid thermal N2O oxidation is reported for the first time. MOS capacitor results show that the low-pressure (40 Torr) N2O-grown oxides have much less interface state generation and charge trapping under constant current stress as compared to oxides grown in either 760 Torr N2O or O2 ambient.

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