Zinc tin oxide metal semiconductor field effect transistors and their improvement under negative bias (illumination) temperature stress

Applied Physics Letters ◽

10.1063/1.4976196 ◽

2017 ◽

Vol 110 (7) ◽

pp. 073502 ◽

Author(s):

G. T. Dang ◽

T. Kawaharamura ◽

M. Furuta ◽

M. W. Allen

Keyword(s):

Temperature Stress ◽

Tin Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Negative Bias ◽

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High-performance flexible zinc tin oxide field-effect transistors

Applied Physics Letters ◽

10.1063/1.2120895 ◽

2005 ◽

Vol 87 (19) ◽

pp. 193503 ◽

Author(s):

W. B. Jackson ◽

R. L. Hoffman ◽

G. S. Herman

Keyword(s):

Tin Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

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Improved Degradation and Recovery Characteristics of SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Negative-Bias Temperature Stress

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cc21 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CC21

Author(s):

Do-Young Choi ◽

Chang-Woo Sohn ◽

Hyun Chul Sagong ◽

Eui-Young Jung ◽

Chang Yong Kang ◽

...

Keyword(s):

Metal Oxide ◽

Temperature Stress ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Bias Temperature Stress

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Effect of sputter power on the photobias stability of zinc-tin-oxide field-effect transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4832329 ◽

2014 ◽

Vol 32 (1) ◽

pp. 011202 ◽

Author(s):

Bong Seob Yang ◽

Seungha Oh ◽

Yoon Jang Kim ◽

Sang Jin Han ◽

Hong Woo Lee ◽

...

Keyword(s):

Tin Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

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Defect Generation and Severity Comparison of Negative Bias Temperature Stress-Induced Degradation on 90 nm p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Different Oxide Thicknesses

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dc26 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DC26

Author(s):

Shuang-Yuan Chen ◽

Chia-Hao Tu

Keyword(s):

Metal Oxide ◽

Temperature Stress ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Defect Generation ◽

Bias Temperature Stress

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Negative bias-and-temperature stress-assisted activation of oxygen-vacancy hole traps in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4927619 ◽

2015 ◽

Vol 118 (4) ◽

pp. 044507 ◽

Author(s):

D. P. Ettisserry ◽

N. Goldsman ◽

A. Akturk ◽

A. J. Lelis

Keyword(s):

Silicon Carbide ◽

Oxygen Vacancy ◽

Metal Oxide ◽

Temperature Stress ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Activation Of Oxygen

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Actions of negative bias temperature instability (NBTI) and hot carriers in ultra-deep submicron p-channel metal–oxide–semiconductor field-effect transistors (PMOSFETs)

Chinese Physics ◽

10.1088/1009-1963/16/7/052 ◽

2007 ◽

Vol 16 (7) ◽

pp. 2111-2115 ◽

Author(s):

Liu Hong-Xia ◽

Hao Yue

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Negative Bias ◽

Hot Carriers ◽

Negative Bias Temperature Instability ◽

Bias Temperature Instability

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Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination

Applied Physics Letters ◽

10.1063/1.2715141 ◽

2007 ◽

Vol 90 (12) ◽

pp. 123502 ◽

Author(s):

C. J. Cochrane ◽

P. M. Lenahan ◽

J. P. Campbell ◽

G. Bersuker ◽

A. Neugroschel

Keyword(s):

Hafnium Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Negative Bias ◽

Trapping Centers

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Fabrication and characterisation of transparent-gate field effect transistors using indium tin oxide

IEE Proceedings - Optoelectronics ◽

10.1049/ip-opt:19960083 ◽

1996 ◽

Vol 143 (1) ◽

pp. 7-11 ◽

Author(s):

A.H. Khalid ◽

A.A. Rezazadeh

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Field Effect ◽

Field Effect Transistors

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Improved negative bias illumination instability of sol-gel gallium zinc tin oxide thin film transistors

Applied Physics Letters ◽

10.1063/1.3646388 ◽

2011 ◽

Vol 99 (15) ◽

pp. 152102 ◽

Author(s):

Seok-Jun Seo ◽

Jun Hyuck Jeon ◽

Young Hwan Hwang ◽

Byeong-Soo Bae

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Thin Film Transistors ◽

Sol Gel ◽

Oxide Thin Film ◽

Negative Bias ◽

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Depth localization of positive charge trapped in silicon oxynitride field effect transistors after positive and negative gate bias temperature stress

Applied Physics Letters ◽

10.1063/1.3586780 ◽

2011 ◽

Vol 98 (18) ◽

pp. 183506 ◽

Author(s):

M. Toledano-Luque ◽

B. Kaczer ◽

Ph. J. Roussel ◽

J. Franco ◽

L. Å. Ragnarsson ◽

...

Keyword(s):

Temperature Stress ◽

Field Effect ◽

Positive Charge ◽

Field Effect Transistors ◽

Silicon Oxynitride ◽

Gate Bias ◽

Bias Temperature Stress ◽

Depth Localization

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