Current‐voltage characteristics of In0.53Ga0.47As/In0.52Al0.48As resonant tunneling barrier structures grown by molecular beam epitaxy
2013 ◽
Vol 34
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pp. 1217-1219
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1990 ◽
Vol 19
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pp. 575-580
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2000 ◽
Vol 47
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pp. 1707-1714
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Keyword(s):