Study of the current-voltage characteristics of n-on-p junction fabricated by pr oton-implanted molecular beam epitaxial Hg1-xCdxTe

AbstractCurrent-voltage characteristics of Au contacts formed on buried implanted oxide silicon-on-insulator structures and molecular beam epitaxially grown GaAs on (1012) sapphire and silicon-on-sapphire substrates indicate that the dominant transport mechanism in these films is space-charge-limited current conduction in the presence of deep-level states. The deep-level parameters, determined using an analysis of the current-voltage characteristics, appear to be sensitive to the nature of crystallographic defects present in the grown layers. Conduction in the GaAs film on SOS was dominated by one discrete state located ~ 0.28eV below the conduction band-edge, which is close to the El center uniquely observed in the molecular beam epitaxially grown GaAs-on-Si. Discrete levels are also observed in annealed buried implanted oxide silicon-on-insulator films. In contrast, the GaAs films deposited directly on (1012) sapphire substrates and rapid-thermally annealed high-dose As implanted buried oxide SOI films appear to have a continuous distribution of states. The distributed states in GaAs films deposited directly on sapphire probably arise from the electrical activity of the double-position boundaries present in this material system.

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Study of Ohmic Contacts on P-Type ZnSe and ZnSe Epitaxial Layers Grown by Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-281-727 ◽

1992 ◽

Vol 281 ◽

Author(s):

C. Piskoti ◽

B. Mykolajenko ◽

M. Vaziri

Keyword(s):

Molecular Beam Epitaxy ◽

Ohmic Contact ◽

Ohmic Contacts ◽

Molecular Beam ◽

Metal Contact ◽

Epitaxial Layers ◽

Preliminary Results ◽

Current Voltage ◽

Current Voltage Characteristics ◽

P Type

ABSTRACTTo study the formation of ohmic contacts, several metals have been deposited on p-types ZnTe and ZnSe epitaxial layers. The metals were deposited on the layers either by simple evaporation or by electroplating. The current-voltage characteristics associated with each metal contact were measured. The preliminary results of these measurements indicate that electroplating is a better technique for making ohmic contact to these layers.

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The Properties of n-ZnO/p-SiC Heterojunctions and their Potential Applications for Devices

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.1571 ◽

2006 ◽

Vol 527-529 ◽

pp. 1571-1574 ◽

Cited By ~ 1

Author(s):

Cole W. Litton ◽

Ya.I. Alivov ◽

D. Johnstone ◽

Ümit Özgür ◽

V. Avrutin ◽

...

Keyword(s):

Room Temperature ◽

Molecular Beam ◽

Reverse Bias ◽

Zno Films ◽

Turn On ◽

Forward Current ◽

Current Voltage ◽

Potential Applications ◽

Current Voltage Characteristics ◽

P Type

Heteroepitaxial n-ZnO films have been grown on commercial p-type 6H-SiC substrates by plasma-assisted molecular-beam epitaxy, and n-ZnO/p-SiC heterojunction mesa structures have been fabricated and their photoresponse properties have been studied. Current-voltage characteristics of the structures had a very good rectifying diode-like behavior with a leakage current less than 2 x 10-4 A/cm2 at -10 V, a breakdown voltage greater than 20 V, a forward turn on voltage of ∼5 V, and a forward current of ∼2 A/cm2 at 8 V. Photosensitivity of the diodes, when illuminated from ZnO side, was studied at room temperature and photoresponsivity of as high as 0.045 A/W at -7.5 V reverse bias was observed for photon energies higher than 3.0 eV.

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Optimization of p-type contacts to InGaN-based laser diodes and light emitting diodes grown by plasma assisted molecular beam epitaxy

Optica Applicata ◽

10.37190/oa200215 ◽

2020 ◽

Vol 50 (2) ◽

Author(s):

Krzesimir Nowakowski-Szkudlarek ◽

Grzegorz Muziol ◽

Mikolaj Żak ◽

Mateusz Hajdel ◽

Marcin Siekacz ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Contact Layer ◽

Light Emitting ◽

Mg Doping ◽

Current Voltage ◽

Type Contact ◽

Current Voltage Characteristics ◽

P Type ◽

Diode Current

We investigated the influence of the In0.17Ga0.83N:Mg contact layer grown by plasma assisted molecular beam epitaxy on the resistivity of p-type Ni/Au contacts. We demonstrate that the Schottky barrier width for p-type contact is less than 5 nm. We compare circular transmission line measurements with a p-n diode current-voltage characteristics and show that discrepancies between these two methods can occur if surface quality is deteriorated. It is found that the most efficient contacts to p-type material consist of In0.17Ga0.83N:Mg contact layer with Mg doping level as high as 2 × 1020 cm–3.

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Capacitance‐voltage and current‐voltage characteristics of molecular beam epitaxially grownp+‐GaAs/AlAs/n‐GaAs heterostructures

Applied Physics Letters ◽

10.1063/1.96553 ◽

1986 ◽

Vol 48 (5) ◽

pp. 365-366 ◽

Cited By ~ 10

Author(s):

J. A. Cooper ◽

Q‐D. Qian ◽

M. R. Melloch

Keyword(s):

Molecular Beam ◽

Current Voltage ◽

Capacitance Voltage ◽

Current Voltage Characteristics

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Current‐voltage characteristics of In0.53Ga0.47As/In0.52Al0.48As resonant tunneling barrier structures grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.99504 ◽

1988 ◽

Vol 52 (4) ◽

pp. 314-316 ◽

Cited By ~ 29

Author(s):

Yoshihiro Sugiyama ◽

Tsuguo Inata ◽

Shunichi Muto ◽

Yoshiaki Nakata ◽

Satoshi Hiyamizu

Keyword(s):

Molecular Beam Epitaxy ◽

Resonant Tunneling ◽

Molecular Beam ◽

Tunneling Barrier ◽

Current Voltage ◽

Current Voltage Characteristics

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Molecular Beam Epitaxial Growth and Characterization of GaAs on Sapphire and Silicon-on-Sapphire Substrates

MRS Proceedings ◽

10.1557/proc-144-195 ◽

1988 ◽

Vol 144 ◽

Cited By ~ 4

Author(s):

T. P. Humphreys ◽

C. J. Miner ◽

N. R. Parikh ◽

K. Das ◽

M. K. Summerville ◽

...

Keyword(s):

Electron Microscopy ◽

Molecular Beam ◽

Optical Analysis ◽

Molecular Beam Epitaxial ◽

Sapphire Substrates ◽

Transmission Electron ◽

Current Voltage ◽

Semiconductor Contacts ◽

Molecular Beam Epitaxial Growth

ABSTRACTEpitaxial GaAs layers have been grown by molecular beam epitaxy on (1012) sapphire and silicon-on-sapphire substrates. The grown layers were characterized by optical and transmission electron microscopy; Rutherford backscattering/channeling of 2.1 MeV He+ ions; Raman spectroscopy; Hall mobility measurements; photoluminescence spectroscopy and current-voltage measurements from metal-semiconductor contacts. The extensive microstructural, electrical and optical analysis of the GaAs layers indicates that the films deposited on silicon-on-sapphire are superior to those grown directly on (1012) sapphire substrates.

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