scholarly journals Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

AIP Advances ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 055307 ◽  
Author(s):  
Evan M. Cornuelle ◽  
Tyler A. Growden ◽  
David F. Storm ◽  
Elliott R. Brown ◽  
Weidong Zhang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Current Density ◽  
Growth Temperature ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Peak Current Density ◽  
Peak Current ◽  
Tunneling Diodes

High Speed InAs/AlSb and In0.53Ga0.47As/AlAs Resonant Tunneling Diodes

1992 ◽  
Vol 281 ◽  
Author(s):  
D. H. Chow ◽  
J. N. Schulman ◽  
E. ÖZBAY ◽  
D. M. Bloom
Keyword(s):  
Current Density ◽  
Resonant Tunneling ◽  
High Speed ◽  
Resonant Tunneling Diodes ◽  
Peak Current Density ◽  
Switching Speed ◽  
Tunneling Model ◽  
Band Bending ◽  
Peak Current ◽  
Tunneling Diodes

ABSTRACTWe report a comparison of InAs/AlSb and In0.53Ga0.47As/AlAs resonant tunneling diodes (RTDs) for high speed switching applications. Theoretical simulations are performed for both heterostructure systems using a two band tunneling model, which includes the effects of strain and band bending. Experimental peak current densities are observed to agree well with the calculated values over the range 1×104 A/cm2 to 5× 105 A/cm2. In both types of structures, the maximum peak current density (directly related to switching speed) is determined by device heating. In this regard, InAs/AlSb RTDs are found to be slightly superior to In0.53Ga0.47As/AlAs RTDs due to the low contact and series resistances of InAs. However, higher peak-to-valley ratios and swing voltages are obtained in the In0.53Ga0.47As/AlAs devices up to their maximum attainable peak current density (3.1×105 A/cm2 in this study). Both heterostructure systems yield RTDs with estimated switching times near 1 ps.

431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes

2018 ◽  
Vol 112 (3) ◽  
pp. 033508 ◽  
Author(s):  
Tyler A. Growden ◽  
Weidong Zhang ◽  
Elliott R. Brown ◽  
David F. Storm ◽  
Katurah Hansen ◽  
...  
Keyword(s):  
Current Density ◽  
Resonant Tunneling ◽  
Tunneling Current ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

Analysis of the Use of Molecular Resonant Tunneling Diodes for Local Refresh of Dynamic Random Access Memory Cells

2001 ◽  
Vol 679 ◽  
Author(s):  
Jonas Berg ◽  
Stefan Bengtsson ◽  
Per Lundgren
Keyword(s):  
Electrical Properties ◽  
Resonant Tunneling ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Storage Capacitor ◽  
Resonant Tunneling Diodes ◽  
Memory Cells ◽  
Access Memory ◽  
Tunneling Diodes

ABSTRACTSimulations have been made to analyze the use of molecular resonant tunneling diodes for local refresh of DRAM (Dynamic Random Access Memory) cells. Local refresh can be provided by a latch consisting of a pair of resonant tunneling diodes connected to the storage capacitor of the cell. Such a solution would significantly reduce the standby power consumption of the DRAM cell. We have compared the requirements on the resonant tunneling diodes for proper refresh operation with the electrical properties of published molecules with resonant IV-curves. The simulations show that no molecules with resonant electrical properties published so far in the literature have properties making them useful for this particular application. This is true also for low temperature operation. The issues of maximum tolerable series resistance and of maximum tolerable fluctuations in the number of attached molecules have also been addressed. Our results show that the focus for development of molecules with resonant electrical properties should be to find molecules with resonance for lower applied voltages and lower current levels than the molecules published so far. If the synthesis of new molecules with attractive properties is successful the merging of silicon technology and molecular electronics, for instance for new generations of DRAM cells, is a realistic future path of microelectronics.

The design of GaAs/AlAs resonant tunneling diodes with peak current densities over 2×105A cm−2

1991 ◽  
Vol 69 (5) ◽  
pp. 3345-3350 ◽  
Author(s):  
E. Wolak ◽  
E. Özbay ◽  
B. G. Park ◽  
S. K. Diamond ◽  
David M. Bloom ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Peak Current ◽  
Tunneling Diodes ◽  
Current Densities
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