scholarly journals Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire

2020 ◽  
Vol 38 (3) ◽  
pp. 032214
Author(s):  
David F. Storm ◽  
Tyler A. Growden ◽  
Evan M. Cornuelle ◽  
Prudhvi R. Peri ◽  
Thomas Osadchy ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Growth Temperature ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

scholarly journals Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

AIP Advances ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 055307 ◽  
Author(s):  
Evan M. Cornuelle ◽  
Tyler A. Growden ◽  
David F. Storm ◽  
Elliott R. Brown ◽  
Weidong Zhang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Current Density ◽  
Growth Temperature ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Peak Current Density ◽  
Peak Current ◽  
Tunneling Diodes

Analysis of the Use of Molecular Resonant Tunneling Diodes for Local Refresh of Dynamic Random Access Memory Cells

2001 ◽  
Vol 679 ◽  
Author(s):  
Jonas Berg ◽  
Stefan Bengtsson ◽  
Per Lundgren
Keyword(s):  
Electrical Properties ◽  
Resonant Tunneling ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Storage Capacitor ◽  
Resonant Tunneling Diodes ◽  
Memory Cells ◽  
Access Memory ◽  
Tunneling Diodes

ABSTRACTSimulations have been made to analyze the use of molecular resonant tunneling diodes for local refresh of DRAM (Dynamic Random Access Memory) cells. Local refresh can be provided by a latch consisting of a pair of resonant tunneling diodes connected to the storage capacitor of the cell. Such a solution would significantly reduce the standby power consumption of the DRAM cell. We have compared the requirements on the resonant tunneling diodes for proper refresh operation with the electrical properties of published molecules with resonant IV-curves. The simulations show that no molecules with resonant electrical properties published so far in the literature have properties making them useful for this particular application. This is true also for low temperature operation. The issues of maximum tolerable series resistance and of maximum tolerable fluctuations in the number of attached molecules have also been addressed. Our results show that the focus for development of molecules with resonant electrical properties should be to find molecules with resonance for lower applied voltages and lower current levels than the molecules published so far. If the synthesis of new molecules with attractive properties is successful the merging of silicon technology and molecular electronics, for instance for new generations of DRAM cells, is a realistic future path of microelectronics.

Nanofabricated SiO2-Si-SiO2 Resonant Tunneling Diodes

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Resonance Tunneling ◽  
Tunneling Diodes

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

scholarly journals Bursting and Excitability in Neuromorphic Resonant Tunneling Diodes

2021 ◽  
Vol 15 (3) ◽  
Author(s):  
Ignacio Ortega-Piwonka ◽  
Oreste Piro ◽  
José Figueiredo ◽  
Bruno Romeira ◽  
Julien Javaloyes
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes
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