Optical and electrophysical properties of lndolo[3,2-b]carbazole based thin-film structures

2020 ◽  
Author(s):  
K. E. Trofimova ◽  
A. V. Ishchenko ◽  
R. A. Irgashev ◽  
N. A. Kazin ◽  
I. A. Weinstein
Keyword(s):  
Thin Film ◽  
Electrophysical Properties

Influence of Annealing on the Electrophysical Properties of Copper Oxide (II) Thin Film, Prepared by Sol-Gel Method

2020 ◽  
Vol 28 ◽  
pp. 48-52 ◽  
Author(s):  
Dmitriy Sergeevich Permyakov ◽  
Stanislav Ivanovich Rembeza ◽  
Tatiana Gennadevna Menshikova ◽  
Vladimir Evgenevich Polkovnikov ◽  
Maksim Aleksandrovich Belykh
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Electrical Resistance ◽  
Isopropyl Alcohol ◽  
Sol Gel ◽  
Copper Acetate ◽  
Electrophysical Properties ◽  
Gel Method ◽  
Sol Gel Method ◽  
Conductivity Type

This article discusses the effect of annealing time at temperatures of 400 and 500 ° C on the electrophysical properties of CuO films prepared by the sol-gel method based on isopropyl alcohol, copper acetate and diethylamine. The film thickness was 440 nm. Phase composition, electrical resistance, conductivity type, optical properties of films are determined.

Structure and electrophysical properties of thin-film SnO2–In2O3 heterostructures

2019 ◽  
Vol 30 (13) ◽  
pp. 11859-11867 ◽  
Author(s):  
O. V. Zhilova ◽  
S. Yu. Pankov ◽  
A. V. Sitnikov ◽  
Yu. E. Kalinin ◽  
M. N. Volochaev ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrophysical Properties

On the Possibility of the Creation of Radically New Type Detectors of Particles and Radiation Based on High-Tc Superconductors

1997 ◽  
Vol 11 (25) ◽  
pp. 1123-1131 ◽  
Author(s):  
S. G. Gevorgyan ◽  
A. A. Movsisyan ◽  
G. D. Movsesyan ◽  
V. A. Shindyan ◽  
H. G. Shirinyan
Keyword(s):  
Thin Film ◽  
Magnetic Fields ◽  
Electrophysical Properties ◽  
High Tc Superconductors ◽  
High Tc ◽  
Diode Oscillator ◽  
New Type ◽  
Htsc Film ◽  
The Creation ◽  
Tunnel Diode Oscillator

Some aspects of high-T c superconductors (HTSC) electrophysical properties, which could be successfully applied to the detection of particles and radiation are discussed. The possibilities and the perspectives of the creation of completely new type detectors of elementary particles and ionizing radiation, based on HTSC materials, are considered. At this, the use of the unusual open-flat measuring (pick-up) coils made of, in particular, the HTSC materials, as a detecting element in known tunnel diode oscillator technique it seems of considerable promise and may find also a number of other applications in different areas of science and technology. The results of the HTSC thin-film structures real use for the detection of the visible and infrared spectrum radiations as well as constant magnetic fields and also direct currents passing through the HTSC film structures are presented. Three designs of these detectors are proposed suitable for various applications. The achieved up-to-date sensitivity is about 10-11 Wt/cm2/Hz-1/2 for the 0.63 μm and 0.8 μm wavelength radiations, about 0.1 mOe/cm2/Hz-1/2 for the constant magnetic fields and about 0.1 μA/cm2/Hz-1/2 for the direct currents passing through the HTSC thin-film structures. Capabilities of new detectors are evaluated and possible directions of further essential improvement of their parameters are also suggested.

scholarly journals Concentration and Size Effects in Electrophysical Properties of Thin Films Based on Permalloy and Silver

2020 ◽  
Vol 21 (2) ◽  
pp. 238-242
Author(s):  
I. M. Pazukha ◽  
D. O. Shuliarenko ◽  
O. V. Pylypenko ◽  
M. S. Оvrutskyi ◽  
L. V. Odnodvorets
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Size Effects ◽  
Phase State ◽  
Diffraction Method ◽  
Electrophysical Properties ◽  
Wide Composition Range ◽  
X Ray ◽  
Concentration Dependences ◽  
Evaporation Technique

Complex study of electrophysical properties (the electrical resistivity r and the temperature coefficient of resistance (TCR) b) of thin-film samples based on ferromagnetic alloy Ni80Fe20 (permalloy) and noble metal Ag in a wide composition range and within the range of thickness 20-100 nm done. Thin films were obtained by the method of electron-beam co-evaporation technique at room temperature. Their composition was investigated using the method of X-ray spectrometry. The phase state was analyzed by the electron diffraction method. It was demonstrated that the crystal structure of thin films stays unchanged during the annealing process to 500 K. The size and concentration dependences of r and b values were obtained. The corresponding maximum and minimum at the concentration of Ag atoms of 50-60 at.% observed at the dependences r(cAg) and b(cAg). Size dependences r(d) and b(d) associated with the size effects in thin-film materials.

scholarly journals Coherent quantum states in the laser-induced thin film nanocluster structures: optical and electrophysical properties

2017 ◽  
Vol 161 ◽  
pp. 01001
Author(s):  
S. Arakelian ◽  
A. Kucherik ◽  
S. Kutrovskaya ◽  
A. Osipov ◽  
A. Istratov ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum States ◽  
Electrophysical Properties ◽  
Coherent Quantum

Some Properties of Thin Film Structures on the Base of ZnO Obtained by MOCVD Method

2013 ◽  
Vol 200 ◽  
pp. 3-9 ◽  
Author(s):  
Nina M. Roshchina ◽  
Petro S. Smertenko ◽  
Volodymyr G. Stepanov ◽  
Lyudmyla V. Zavyalova ◽  
Oksana Lytvyn
Keyword(s):  
Thin Film ◽  
Atmospheric Pressure ◽  
Zno Films ◽  
Zno Thin Film ◽  
Electrophysical Properties ◽  
Si Substrates ◽  
Structure And Morphology ◽  
Flow Mechanisms ◽  
Charge Flow ◽  
Composition Structure

The ZnO thin film structures were obtained by MOCVD method under atmospheric pressure onto Si substrates heated up to 250-350 оС. The film thickness varied from 0.4 – 0.5 µm. The phase composition, structure and morphology of ZnO films as well as electrophysical properties of ZnO/Si heterojunction on their base were investigated. The possible charge flow mechanisms in ZnO/Si heterojunction are discussed.

scholarly journals Вольт-амперные характеристики и фотоэлектрический эффект гетероструктур фуллерен С-=SUB=-60-=/SUB=--4-метилфенилгидразон N-изоамилизатина

2019 ◽  
Vol 45 (19) ◽  
pp. 40
Author(s):  
А.Н. Гусев ◽  
А.С. Мазинов ◽  
А.И. Шевченко ◽  
А.С. Тютюник ◽  
В.С. Гурченко ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Organic Matter ◽  
Ir Spectroscopy ◽  
Fullerene C60 ◽  
Electrophysical Properties ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
C60 Films

The results of using N-isoamylisatin 4-methylphenylhydrazone to optimize fullerene-based heterostructures have been presented. The technique of obtaining, microscopy, as well as the results of IR spectroscopy and the study of the electrophysical properties of thin films of this hydrazone together with fullerene C60 have been described. The addition of the considered organic matter to fullerene films made it possible to increase the photoconductivity by 2 orders of magnitude compared to C60 films. The obtained thin-film structures have rectifying light-current-voltage characteristics.

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