Disorder and epitaxial strain control of metamagnetic transition, large saturation magnetization, and magneto-terahertz properties of YMn0.5Cr0.5O3 polycrystals and thin films

NiZn-ferrite thin films were deposited onto silicon and glass substrates by radio frequency magnetron sputtering at room temperature. The effects of the relative oxygen flow ratio on the structure and magnetic properties of the thin films were investigated. The study results reveal that the films deposited under higher relative oxygen flow ratio show a better crystallinity. Static magnetic measurement results indicated that the saturation magnetization of the films was greatly affected by the crystallinity, grain dimension, and cation distribution in the NiZn-ferrite films. The NiZn-ferrite thin films with a maximum saturation magnetization of 151 emucm-3, which is about 40% of the bulk NiZn ferrite, was obtained under relative oxygen flow ratio of 60%.

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An advancement in the synthesis of unique soft magnetic CoCuFeNiZn high entropy alloy thin films

Scientific Reports ◽

10.1038/s41598-021-87786-8 ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

Chokkakula L. P. Pavithra ◽

Reddy Kunda Siri Kiran Janardhana ◽

Kolan Madhav Reddy ◽

Chandrasekhar Murapaka ◽

Joydip Joardar ◽

...

Keyword(s):

Thin Films ◽

Saturation Magnetization ◽

Functional Materials ◽

Single Step ◽

High Entropy Alloy ◽

High Saturation Magnetization ◽

Soft Magnetic ◽

High Entropy ◽

High Saturation ◽

Electrochemical Approach

AbstractDiscovery of advanced soft-magnetic high entropy alloy (HEA) thin films are highly pursued to obtain unidentified functional materials. The figure of merit in current nanocrystalline HEA thin films relies in integration of a simple single-step electrochemical approach with a complex HEA system containing multiple elements with dissimilar crystal structures and large variation of melting points. A new family of Cobalt–Copper–Iron–Nickel–Zinc (Co–Cu–Fe–Ni–Zn) HEA thin films are prepared through pulse electrodeposition in aqueous medium, hosts nanocrystalline features in the range of ~ 5–20 nm having FCC and BCC dual phases. The fabricated Co–Cu–Fe–Ni–Zn HEA thin films exhibited high saturation magnetization value of ~ 82 emu/g, relatively low coercivity value of 19.5 Oe and remanent magnetization of 1.17%. Irrespective of the alloying of diamagnetic Zn and Cu with ferromagnetic Fe, Co, Ni elements, the HEA thin film has resulted in relatively high saturation magnetization which can provide useful insights for its potential unexplored applications.

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Strain Control of Phase Transition and Exchange Bias in Flexible Heusler Alloy Thin Films

ACS Applied Materials & Interfaces ◽

10.1021/acsami.1c03701 ◽

2021 ◽

Author(s):

Yechao Ling ◽

Yong Hu ◽

Haobo Wang ◽

Ben Niu ◽

Jiawei Chen ◽

...

Keyword(s):

Thin Films ◽

Phase Transition ◽

Exchange Bias ◽

Heusler Alloy ◽

Strain Control

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Giant Tuning of Electronic and Thermoelectric Properties by Epitaxial Strain in p-Type Sr-Doped LaCrO3 Transparent Thin Films

ACS Applied Electronic Materials ◽

10.1021/acsaelm.1c00425 ◽

2021 ◽

Author(s):

Dong Han ◽

Rahma Moalla ◽

Ignasi Fina ◽

Valentina M. Giordano ◽

Marc d’Esperonnat ◽

...

Keyword(s):

Thin Films ◽

Thermoelectric Properties ◽

Epitaxial Strain ◽

P Type

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Strain-stabilized superconductivity

Nature Communications ◽

10.1038/s41467-020-20252-7 ◽

2021 ◽

Vol 12 (1) ◽

Author(s):

J. P. Ruf ◽

H. Paik ◽

N. J. Schreiber ◽

H. P. Nair ◽

L. Miao ◽

...

Keyword(s):

Thin Films ◽

Materials Science ◽

Condensed Matter ◽

Quantum States ◽

Low Energy ◽

Superconducting Transition ◽

Superconducting Properties ◽

Detailed Understanding ◽

Epitaxial Strain ◽

Promising Strategy

AbstractSuperconductivity is among the most fascinating and well-studied quantum states of matter. Despite over 100 years of research, a detailed understanding of how features of the normal-state electronic structure determine superconducting properties has remained elusive. For instance, the ability to deterministically enhance the superconducting transition temperature by design, rather than by serendipity, has been a long sought-after goal in condensed matter physics and materials science, but achieving this objective may require new tools, techniques and approaches. Here, we report the transmutation of a normal metal into a superconductor through the application of epitaxial strain. We demonstrate that synthesizing RuO2 thin films on (110)-oriented TiO2 substrates enhances the density of states near the Fermi level, which stabilizes superconductivity under strain, and suggests that a promising strategy to create new transition-metal superconductors is to apply judiciously chosen anisotropic strains that redistribute carriers within the low-energy manifold of d orbitals.

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Influencing the Structural, Vibrational and Electronic Properties of Pulsed Laser Deposited PrNi0.95Cu0.05O3 Thin Films by Tuning Epitaxial Strain

Thin Solid Films ◽

10.1016/j.tsf.2021.138877 ◽

2021 ◽

pp. 138877

Author(s):

Ekta Yadav ◽

Kavita Soni ◽

S. Harisankar ◽

S. Prabhu ◽

K.R. Mavani

Keyword(s):

Thin Films ◽

Electronic Properties ◽

Pulsed Laser ◽

Epitaxial Strain

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Effect of epitaxial strain on the magneto-electric coupling of YMnO3 thin films

Journal of Applied Physics ◽

10.1063/1.3168423 ◽

2009 ◽

Vol 106 (1) ◽

pp. 014109 ◽

Cited By ~ 9

Author(s):

A. K. Singh ◽

M. Snure ◽

A. Tiwari ◽

S. Patnaik

Keyword(s):

Thin Films ◽

Electric Coupling ◽

Epitaxial Strain

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Effect of epitaxy and lattice mismatch on saturation magnetization of γ′-Fe4N thin films

Applied Physics Letters ◽

10.1063/1.2940599 ◽

2008 ◽

Vol 92 (22) ◽

pp. 222507 ◽

Cited By ~ 47

Author(s):

Shahid Atiq ◽

Hyun-Seok Ko ◽

Saadat Anwar Siddiqi ◽

Sung-Chul Shin

Keyword(s):

Thin Films ◽

Saturation Magnetization ◽

Lattice Mismatch

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Fabrication of Ultra Thick Ferromagnetic Structures in Silicon

Microelectromechanical Systems ◽

10.1115/imece2004-61909 ◽

2004 ◽

Cited By ~ 1

Author(s):

Debbie G. Jones ◽

Albert P. Pisano

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Scanning Electron Microscopy ◽

Saturation Magnetization ◽

Silicon Wafer ◽

Fabrication Process ◽

Sem Images ◽

Deep Reactive Ion Etching ◽

Scanning Electron

A novel fabrication process is presented to create ultra thick ferromagnetic structures in silicon. The structures are fabricated by electroforming NiFe into silicon templates patterned with deep reactive ion etching (DRIE). Thin films are deposited into photoresist molds for characterization of an electroplating cell. Results show that electroplated films with a saturation magnetization above 1.6 tesla and compositions of approximately 50/50 NiFe can be obtained through agitation of the electrolyte. Scanning electron microscopy (SEM) images show that NiFe structures embedded in a 500 μm thick silicon wafer are realized and the roughening of the mold sidewalls during the DRIE aids in adhesion of the NiFe to the silicon.

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Comparison Between In-situ Annealing and External Annealing For Barium Ferrite Thin Films Made by RF Magnetron Sputtering

MRS Proceedings ◽

10.1557/proc-875-o4.22 ◽

2005 ◽

Vol 875 ◽

Author(s):

A. R. Abuzir ◽

W. J. Yeh

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Saturation Magnetization ◽

Barium Ferrite ◽

Rf Magnetron Sputtering ◽

Silicon Substrates ◽

Axis Orientation ◽

Average Value ◽

Ferrite Thin Films

AbstractDue to their large magnetic anisotropy perpendicular to the film plane, barium ferrite thick films (BaFe12O19, or BaM) with c-axis orientation are attractive candidates for microwave applications [1,2]. Barium ferrite thin films on silicon substrates without under layer have been deposited under various conditions by RF magnetron sputtering. The structure of the as-grown films is amorphous. External annealing in air has been done at 950°C for ten minutes to crystallize the films. C-axis oriented thin films with squareness of about 0.87 and coercivity of about 3.8KOe are obtained.Thick BaM films with c-axis orientation are difficult to achieve with one single deposition. Multilayer technique looks promising to grow thick films [3]. The external annealing process is difficult to incorporate with the multilayer procedure. An in-situ annealing procedure has been developed to obtain films, which can be used as the basic component for future multilayer deposition. Barium ferrites are first magnetron sputtered on bare silicon substrates in Ar + O2 atmosphere at substrate temperature of 500-600°C, the deposition pressure was kept about 0.008 torr. After the deposition, the temperature of the substrate is immediately increased to about 860°C for ten minutes in 140 torr of argon (80%) and oxygen (20%) mixture of gas, which was introduced into the chamber without breaking the vacuum. With the in-situ process, c-axis oriented thin films of 0.88 squareness and coercivity value of about 4.3KOe are obtained.Both annealing methods seem to have the similar effect on the perpendicular squareness and coercivity at various film thicknesses. The average value of the saturation magnetization Ms obtained from the in-situ annealing using multilayer technique is higher than that of the external one. We have grown films up to 1.0 micron thickness using the multilayer technique, in which three layers of 0.3 μm thickness each are deposited until the final thickness is reached. After the deposition of each layer, it was in-situ annealed before starting the deposition of the next layer. With the multilayer technique, coercivity of about 3.5 KOe and average value of the saturation magnetization Ms of about 4.0 K Gauss is obtained.

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