Misfit dislocation structure and thermal boundary conductance of GaN/AlN interfaces

Heavily boron-doped silicon buried epitaxial layers are becoming increasingly important in the fabrication of thin membranes, three dimensional structures in silicon and latch-up free CMOS circuits. Si(Ge,B) co-doping has been utilized to compensate the B-induced lattice contraction in Si and hence buried high conducting layers which are strain-free and lattice matched to the Si substrate have been realized. The utilization of isoelectronic Ge also alters the point defect distribution in silicon resulting in reduced dopant diffusion which is an added advantage in realizing shallow junctions and reduced interfacial transition width in epitaxial layers. This contribution addresses the evolution of misfit dislocation structure and B precipitation behavior in heavily B-doped buried Si epitaxial layers. In addition, the effect of Ge co-doping on B solubility in Si will be discussed.Silicon epitaxial layers were grown at 1080°C by chemical vapor deposition on 4-inch diameter p-type (100) substrates (10 and 0.04 Ω-cm) employing the SiH2Cl2-B2H6-GeH4-H2 chemical system. Single 5 μm thick epilayers and 2 μm buried layers with 4 μm intrinsic cap layers (10 Ω-cm) were grown.

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The Effect of The Initial Nucleation Temperature on The Misfit Dislocation Structure of InP-on-GaAs Heterostructures

MRS Proceedings ◽

10.1557/proc-263-461 ◽

1992 ◽

Vol 263 ◽

Cited By ~ 3

Author(s):

Ferenc Riesz ◽

G. Radnoczi ◽

B. Pecz ◽

K. Rakennus ◽

T. Hakkarainen ◽

...

Keyword(s):

Dislocation Structure ◽

Misfit Dislocation ◽

Strain Relaxation ◽

Initial Growth ◽

Misfit Stress ◽

X Ray ◽

Transmission Electron ◽

Initial Nucleation ◽

Island Type ◽

Indirect Information

ABSTRACTThe misfit dislocation structure of vicinal InP-on-GaAs heterostructures is studied by transmission electron microscopy (TEM). An island type growth is identified. The misfit stress is not fully relaxed at the interface. X-ray measurements on strain relaxation and epilayer misorientation are also reported, and the latter results are explained with the asymmetric introduction of 6Ø° dislocations at island edges. Comparing the results, it is concluded that x-ray data supply additional, although indirect, information on initial growth which is hardly detectable by TEM.

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Misfit dislocation structure at a Si/SixGe1−xstrained‐layer interface

Journal of Applied Physics ◽

10.1063/1.339597 ◽

1987 ◽

Vol 62 (5) ◽

pp. 1710-1712 ◽

Cited By ~ 50

Author(s):

Krishna Rajan ◽

Mike Denhoff

Keyword(s):

Dislocation Structure ◽

Misfit Dislocation ◽

Layer Interface

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The dislocation structure of a 10° [110] tilt boundary in silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100074446 ◽

1983 ◽

Vol 41 ◽

pp. 114-115

Author(s):

B. Cunningham ◽

D.G. Ast

Keyword(s):

Dislocation Structure ◽

Tilt Angle ◽

Imaging Technique ◽

Diamond Lattice ◽

Tilt Boundary ◽

Formation Mechanisms ◽

Diffraction Contrast ◽

Lattice Fringe ◽

Tilt Boundaries ◽

Chemically Vapor Deposited

There have Been a number of studies of low-angle, θ < 4°, [10] tilt boundaries in the diamond lattice. Dislocations with Burgers vectors a/2<110>, a/2<112>, a<111> and a<001> have been reported in melt-grown bicrystals of germanium, and dislocations with Burgers vectors a<001> and a/2<112> have been reported in hot-pressed bicrystals of silicon. Most of the dislocations were found to be dissociated, the dissociation widths being dependent on the tilt angle. Possible dissociation schemes and formation mechanisms for the a<001> and a<111> dislocations from the interaction of lattice dislocations have recently been given.The present study reports on the dislocation structure of a 10° [10] tilt boundary in chemically vapor deposited silicon. The dislocations in the boundary were spaced about 1-3nm apart, making them difficult to resolve by conventional diffraction contrast techniques. The dislocation structure was therefore studied by the lattice-fringe imaging technique.

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Mechanical Properties and Dislocation Structure of Single Crystal Cdte Deformed in Compression at 300°C

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010009292x ◽

1976 ◽

Vol 34 ◽

pp. 592-593

Author(s):

Ernest L. Hall ◽

J. B. Vander Sande

Keyword(s):

Mechanical Properties ◽

Single Crystal ◽

Dislocation Structure ◽

Room Temperature ◽

Elevated Temperatures ◽

Strain Curve ◽

Optical Devices ◽

Semiconductor Compound ◽

Wide Range ◽

Sample Orientation

The present paper describes research on the mechanical properties and related dislocation structure of CdTe, a II-VI semiconductor compound with a wide range of uses in electrical and optical devices. At room temperature CdTe exhibits little plasticity and at the same time relatively low strength and hardness. The mechanical behavior of CdTe was examined at elevated temperatures with the goal of understanding plastic flow in this material and eventually improving the room temperature properties. Several samples of single crystal CdTe of identical size and crystallographic orientation were deformed in compression at 300°C to various levels of total strain. A resolved shear stress vs. compressive glide strain curve (Figure la) was derived from the results of the tests and the knowledge of the sample orientation.

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