Impact ionization coefficients and critical electric field in GaN

In this work, Monte Carlo model is developed to investigate the avalanche characteristics of GaN and Al0.45Ga0.55N avalanche photodiodes (APDs) using random ionization path lengths incorporating dead space effect. The simulation includes the impact ionization coefficients, multiplication gain and excess noise factor for electron- and hole-initiated multiplication with a range of thin multiplication widths. The impact ionization coefficient for GaN is higher than that of Al0.45Ga0.55N. For GaN, electron dominates the impact ionization at high electric field while hole dominate at low electric field whereas Al0.45Ga0.55N has hole dominate the impact ionization at higher field while electron dominate the lower field. In GaN APDs, electron-initiated multiplication is leading the multiplication gain at thinner multiplication widths while hole-initiated multiplication leads for longer widths. However for Al0.45Ga0.55N APDs, hole-initiated multiplication leads the multiplication gain for all multiplication widths simulated. The excess noise of electron-initiated multiplication in GaN APDs increases as multiplication widths increases while the excess noise decreases as the multiplication widths increases for hole-initiated multiplication. As for Al0.45Ga0.55N APDs, the excess noise for hole-initiated multiplication increases when multiplication width increases while the electron-initiated multiplication increases with the same gradient at all multiplication widths.

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OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients

Materials Science Forum ◽

10.4028/www.scientific.net/msf.717-720.545 ◽

2012 ◽

Vol 717-720 ◽

pp. 545-548 ◽

Cited By ~ 6

Author(s):

D.M. Nguyen ◽

Christophe Raynaud ◽

Mihai Lazar ◽

Gontran Pâques ◽

Sigo Scharnholz ◽

...

Keyword(s):

Electric Field ◽

Light Source ◽

Impact Ionization ◽

Optical Beam ◽

Induced Current ◽

Carrier Injection ◽

Field Range ◽

Avalanche Diodes ◽

Ionization Coefficients

Optical Beam Induced Current (OBIC) measurements have been performed on 4H-SiC avalanche diodes with very thin and highly doped avalanche region. The light source used in this study is an Ar-laser with a wavelength of 351 nm which results in a mixed carrier injection. From these measurements, impact ionization coefficients for 4H-SiC have been extracted in the electric field range from 3 to 4.8 MV/cm. In combination with ionization coefficients in our previous paper extracted from diodes with lowly doped avalanche region, we propose a set of parameters of impact ionization coefficients for 4H-SiC, applicable to a wide electric field range.

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Dependence of impact ionization coefficients on electric‐field profile and injection mode approximations

Journal of Applied Physics ◽

10.1063/1.355251 ◽

1993 ◽

Vol 74 (1) ◽

pp. 635-638

Author(s):

H. Luquet ◽

L. Gouskov ◽

M. Pérotin ◽

M. Karim ◽

A. Rmou ◽

...

Keyword(s):

Electric Field ◽

Impact Ionization ◽

Field Profile ◽

Injection Mode ◽

Electric Field Profile ◽

Ionization Coefficients

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Impact Ionization Coefficients in (AlₓGa₁₋ₓ)0.52In0.48P and AlₓGa₁₋ₓAs Lattice-Matched to GaAs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3086800 ◽

2021 ◽

pp. 1-6

Author(s):

Harry I. J. Lewis ◽

Liang Qiao ◽

Jeng Shiuh Cheong ◽

Aina N. A. P. Baharuddin ◽

Andrey B. Krysa ◽

...

Keyword(s):

Impact Ionization ◽

Ionization Coefficients ◽

Lattice Matched

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Temperature Dependence of Hole Impact Ionization Coefficient in 4H-SiC Photodiodes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.311 ◽

2009 ◽

Vol 615-617 ◽

pp. 311-314 ◽

Cited By ~ 4

Author(s):

W.S. Loh ◽

J.P.R. David ◽

B.K. Ng ◽

Stanislav I. Soloviev ◽

Peter M. Sandvik ◽

...

Keyword(s):

Phonon Scattering ◽

Impact Ionization ◽

Positive Temperature Coefficient ◽

Positive Temperature ◽

Different Temperatures ◽

Ionization Coefficients ◽

Increasing Temperature ◽

The Impact ◽

Good Agreement ◽

Ionization Rates

Hole initiated multiplication characteristics of 4H-SiC Separate Absorption and Multiplication Avalanche Photodiodes (SAM-APDs) with a n- multiplication layer of 2.7 µm were obtained using 325nm excitation at temperatures ranging from 300 to 450K. The breakdown voltages increased by 200mV/K over the investigated temperature range, which indicates a positive temperature coefficient. Local ionization coefficients, including the extracted temperature dependencies, were derived in the form of the Chynoweth expression and were used to predict the hole multiplication characteristics at different temperatures. Good agreement was obtained between the measured and the modeled multiplication using these ionization coefficients. The impact ionization coefficients decreased with increasing temperature, corresponding to an increase in breakdown voltage. This result agrees well with the multiplication characteristics and can be attributed to phonon scattering enhanced carrier cooling which has suppressed the ionization process at high temperatures. Hence, a much higher electric field is required to achieve the same ionization rates.

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Impact ionization coefficients in Si1−xGex

Applied Physics Letters ◽

10.1063/1.113134 ◽

1995 ◽

Vol 66 (2) ◽

pp. 204-205 ◽

Cited By ~ 5

Author(s):

J. Lee ◽

A. L. Gutierrez‐Aitken ◽

S. H. Li ◽

P. K. Bhattacharya

Keyword(s):

Impact Ionization ◽

Ionization Coefficients

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Stimulated and spontaneous far infra-red emission from uniaxially strained gapless Hg1−xCdxTe

Opto-Electronics Review ◽

10.2478/s11772-010-1036-5 ◽

2010 ◽

Vol 18 (3) ◽

Author(s):

S.G. Gasan-Zade ◽

M.V. Strikha ◽

G.A. Shepelskii

Keyword(s):

Electric Field ◽

Impact Ionization ◽

Strong Electric Field ◽

Radiative Transition ◽

Hot Electrons ◽

Acceptor Level ◽

Threshold Values ◽

Red Emission ◽

V Band ◽

Infra Red

AbstractThe intensive far infra-red irradiation in the range of 80–100 μm was observed in uniaxially strained gapless p-Hg1−xCdxTe (MCT) with x = 0.14 in the strong electric field. The inverse occupation in strained MCT is created because the hot electrons distribution occurs in the c-band under impact ionization, while the holes are localized near the v-band top. The probability of band-to-band radiative transition increases dramatically when the acceptor level becomes resonance in the v-band. At threshold values of strain and electric field (P = 2.5–2.7 kbar, E = 50–55 V/cm), increase in irradiation (by 3 orders of magnitude) and increase in current (by 4–6 times) occur.

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