Optimization on thermoelectric characteristics of indium tin oxide/indium oxide thin film thermocouples based on screen printing technology

Indium tin oxide (ITO) thin-film thermocouples monitor the temperature of hot section components in gas turbines. As an in situ measuring technology, the main challenge of a thin-film thermocouple is its installation on complex geometric surfaces. In this study, an ITO thin-film thermocouple probe based on a sapphire microrod was used to access narrow areas. The performance of the probe, i.e., the thermoelectricity and stability, was analyzed. This novel sensor resolves the installation difficulties of thin-film devices.

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Effect of annealing on the thermoelectricity of indium tin oxide thin film thermocouples

Ceramics International ◽

10.1016/j.ceramint.2019.10.190 ◽

2020 ◽

Vol 46 (4) ◽

pp. 4602-4609 ◽

Cited By ~ 2

Author(s):

Xinhang Jin ◽

Binghe Ma ◽

Keli Zhao ◽

Zexun Zhang ◽

Jinjun Deng ◽

...

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Oxide Thin Film ◽

Thin Film Thermocouples

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Influence of Annealing on Solution-Processed Indium Oxide Thin-Film Transistors Under Ambient Air and Wet Conditions

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2591622 ◽

2016 ◽

Vol 63 (9) ◽

pp. 3558-3561 ◽

Cited By ~ 6

Author(s):

Bo Sung Kim ◽

Hyun Jae Kim

Keyword(s):

Thin Film ◽

Indium Oxide ◽

Thin Film Transistors ◽

Ambient Air ◽

Oxide Thin Film ◽

Solution Processed ◽

Indium Oxide Thin Film

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Indium oxide thin film based ammonia gas and ethanol vapour sensor

Bulletin of Materials Science ◽

10.1007/bf02711165 ◽

2005 ◽

Vol 28 (1) ◽

pp. 9-17 ◽

Cited By ~ 69

Author(s):

K. K. Makhija ◽

Arabinda Ray ◽

R. M. Patel ◽

U. B. Trivedi ◽

H. N. Kapse

Keyword(s):

Thin Film ◽

Indium Oxide ◽

Oxide Thin Film ◽

Ammonia Gas ◽

Ethanol Vapour ◽

Indium Oxide Thin Film

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Characteristics of Indium-Tin Oxide Thin Film Etched by Reactive Ion Etching

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.7057 ◽

1994 ◽

Vol 33 (Part 1, No. 12B) ◽

pp. 7057-7060 ◽

Cited By ~ 7

Author(s):

Meiso Yokoyama ◽

Jiin Wen Li ◽

Shui Hsiang Su ◽

Yan Kuin Su

Keyword(s):

Thin Film ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Reactive Ion Etching ◽

Oxide Thin Film ◽

Ion Etching

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High Performance Solution-Processed Indium Oxide Thin-Film Transistors

Journal of the American Chemical Society ◽

10.1021/ja804262z ◽

2008 ◽

Vol 130 (38) ◽

pp. 12580-12581 ◽

Cited By ~ 156

Author(s):

Hyun Sung Kim ◽

Paul D. Byrne ◽

Antonio Facchetti ◽

Tobin J. Marks

Keyword(s):

Thin Film ◽

Indium Oxide ◽

Thin Film Transistors ◽

High Performance ◽

Oxide Thin Film ◽

Solution Processed ◽

Indium Oxide Thin Film

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Bias Stress Stability of Solution-Processed Nano Indium Oxide Thin Film Transistor

Micromachines ◽

10.3390/mi12020111 ◽

2021 ◽

Vol 12 (2) ◽

pp. 111

Author(s):

Rihui Yao ◽

Xiao Fu ◽

Wanwan Li ◽

Shangxiong Zhou ◽

Honglong Ning ◽

...

Keyword(s):

Thin Film ◽

Indium Oxide ◽

Spin Coating ◽

Glass Substrate ◽

Annealing Temperature ◽

Oxide Thin Film ◽

Process Conditions ◽

Hydroxyl Groups ◽

Band Theory ◽

Indium Oxide Thin Film

In this paper, the effects of annealing temperature and other process parameters on spin-coated indium oxide thin film transistors (In2O3-TFTs) were studied. The research shows that plasma pretreatment of glass substrate can improve the hydrophilicity of glass substrate and stability of the spin-coating process. With Fourier transform infrared (FT-IR) and X-ray diffraction (XRD) analysis, it is found that In2O3 thin films prepared by the spin coating method are amorphous, and have little organic residue when the annealing temperature ranges from 200 to 300 °C. After optimizing process conditions with the spin-coated rotating speed of 4000 rpm and the annealing temperature of 275 °C, the performance of In2O3-TFTs is best (average mobility of 1.288 cm2·V−1·s−1, Ion/Ioff of 5.93 × 106, and SS of 0.84 V·dec−1). Finally, the stability of In2O3-TFTs prepared at different annealing temperatures was analyzed by energy band theory, and we identified that the elimination of residual hydroxyl groups was the key influencing factor. Our results provide a useful reference for high-performance metal oxide semiconductor TFTs prepared by the solution method.

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