scholarly journals Observation of the crystalline orientation dependence of the semiconductor–metal transition for thermal oxidation induced VO2 films over amorphous quartz glasses

AIP Advances ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 125232
Author(s):  
Mengtao Gong ◽  
Fei Huang ◽  
Shouqin Tian ◽  
Xiujian Zhao ◽  
Baoshun Liu
Keyword(s):  
Thermal Oxidation ◽  
Orientation Dependence ◽  
Crystalline Orientation ◽  
Amorphous Quartz ◽  
Quartz Glasses

Crystalline orientation dependence of electrical properties of Mn Germanide/Ge(111) and (001) Schottky contacts

2011 ◽  
Vol 88 (5) ◽  
pp. 605-609 ◽  
Author(s):  
Tsuyoshi Nishimura ◽  
Osamu Nakatsuka ◽  
Shingo Akimoto ◽  
Wakana Takeuchi ◽  
Shigeaki Zaima
Keyword(s):  
Electrical Properties ◽  
Orientation Dependence ◽  
Schottky Contacts ◽  
Crystalline Orientation

Thermal Agglomeration of Ultrathin Silicon-on-Insulator Layers: Crystalline Orientation Dependence

2008 ◽  
Vol 47 (3) ◽  
pp. 1461-1464 ◽  
Author(s):  
Youjun Fan ◽  
Ratno Nuryadi ◽  
Zainal A. Burhanudin ◽  
Michiharu Tabe
Keyword(s):  
Orientation Dependence ◽  
Silicon On Insulator ◽  
Crystalline Orientation ◽  
Insulator Layers

Crystalline orientation dependence of nanomechanical properties of Pb(Zr0.52Ti0.48)O3 thin films

2005 ◽  
Vol 86 (16) ◽  
pp. 162903 ◽  
Author(s):  
Qing-Ming Wang ◽  
Yongping Ding ◽  
Qingming Chen ◽  
Minhua Zhao ◽  
Jinrong Cheng
Keyword(s):  
Thin Films ◽  
Orientation Dependence ◽  
Crystalline Orientation ◽  
Nanomechanical Properties

First-principles calculations of orientation dependence of Si thermal oxidation based on Si emission model

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FB06 ◽  
Author(s):  
Takuya Nagura ◽  
Shingo Kawachi ◽  
Kenta Chokawa ◽  
Hiroki Shirakawa ◽  
Masaaki Araidai ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
First Principles ◽  
Orientation Dependence ◽  
Emission Model ◽  
First Principles Calculations

Applications of Photoelectron Microscopy

1976 ◽  
Vol 34 ◽  
pp. 506-507
Author(s):  
William J. Baxter
Keyword(s):  
Electron Microscopy ◽  
Thermal Decomposition ◽  
Chemical Composition ◽  
Ultraviolet Radiation ◽  
Thin Layer ◽  
Edge Effects ◽  
Electron Optics ◽  
Surface Layers ◽  
Crystalline Orientation ◽  
Fluorescent Screen

In this form of electron microscopy, photoelectrons emitted from a metal by ultraviolet radiation are accelerated and imaged onto a fluorescent screen by conventional electron optics. image contrast is determined by spatial variations in the intensity of the photoemission. The dominant source of contrast is due to changes in the photoelectric work function, between surfaces of different crystalline orientation, or different chemical composition. Topographical variations produce a relatively weak contrast due to shadowing and edge effects.Since the photoelectrons originate from the surface layers (e.g. ∼5-10 nm for metals), photoelectron microscopy is surface sensitive. Thus to see the microstructure of a metal the thin layer (∼3 nm) of surface oxide must be removed, either by ion bombardment or by thermal decomposition in the vacuum of the microscope.

Voltage and Orientation Dependence of Characteristic X-Ray Production in Thin Crystals

1985 ◽  
Vol 43 ◽  
pp. 414-415
Author(s):  
G. Thomas ◽  
K. M. Krishnan ◽  
Y. Yokota ◽  
H. Hashimoto
Keyword(s):  
Standing Wave ◽  
Incident Beam ◽  
Orientation Dependence ◽  
Incident Plane Wave ◽  
Crystalline Materials ◽  
X Ray ◽  
Incident Plane ◽  
Crystal Unit Cell ◽  
Beam Orientation ◽  
Acceleration Voltage

For crystalline materials, an incident plane wave of electrons under conditions of strong dynamical scattering sets up a standing wave within the crystal. The intensity modulations of this standing wave within the crystal unit cell are a function of the incident beam orientation and the acceleration voltage. As the scattering events (such as inner shell excitations) that lead to characteristic x-ray production are highly localized, the x-ray intensities in turn, are strongly determined by the orientation and the acceleration voltage. For a given acceleration voltage or wavelength of the incident wave, it has been shown that this orientation dependence of the characteristic x-ray emission, termed the “Borrmann effect”, can also be used as a probe for determining specific site occupations of elemental additions in single crystals.

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