scholarly journals Temperature frequency stability study of extensional mode N-doped silicon MEMS resonator

AIP Advances ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 015319
Author(s):  
Hasnet Ahmed ◽  
Payman Rajai ◽  
Mohammed Jalal Ahamed
Solar RRL ◽  
2021 ◽  
Author(s):  
Bruno Vicari Stefani ◽  
Moonyong Kim ◽  
Matthew Wright ◽  
Anastasia Soeriyadi ◽  
Dmitriy Andronikov ◽  
...  

2021 ◽  
Author(s):  
Amiya Kumar Naik ◽  
Narendra Kumar Jena ◽  
Subhadra Sahoo ◽  
Binod Kumar Sahu

2010 ◽  
Vol 2010 ◽  
pp. 1-5 ◽  
Author(s):  
A. Pomarico ◽  
A. Morea ◽  
P. Flora ◽  
G. Roselli ◽  
E. Lasalandra

MEMS resonators are today widely investigated as a desirable alternative to quartz resonators in real-time clock applications, because of their low-cost, integration capability properties. Nevertheless, MEMS resonators performances are still not competitive, especially in terms of frequency stability and device equivalent resistance (and, then, power consumption). We propose a new structure for a MEMS resonator, with a vertical-like transduction mechanism, which exhibits promising features. The vertical resonator can be fabricated with the low-cost, high performance THELMA technology, and it is designed to be efficiently frequency tunable. With respect to the commonly investigated lateral resonators, it is expected to have lower equivalent resistances and improved large-scale repeatability characteristics.


2019 ◽  
Vol 286 ◽  
pp. 123-132 ◽  
Author(s):  
Zeji Chen ◽  
Fengxiang Wang ◽  
Quan Yuan ◽  
Xiao Kan ◽  
Jinling Yang ◽  
...  

2017 ◽  
Vol 2017 (2) ◽  
pp. 57-60
Author(s):  
O.V. Kyrylenko ◽  
◽  
V.V. Pavlovsky ◽  
А.О. Steliuk ◽  
O.V. Lenga ◽  
...  

Author(s):  
Fengxiang Wang ◽  
Quan Yuan ◽  
Xiao Kan ◽  
Zeji Chen ◽  
Jinling Yang ◽  
...  

Author(s):  
H. Takaoka ◽  
M. Tomita ◽  
T. Hayashi

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.


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