scholarly journals Solar Electricity and Recent Progress in Thin Film Photovoltaics

1984 ◽  
Vol 37 (4) ◽  
pp. 449
Author(s):  
D Haneman

Current methods of producing electricity from solar energy are summarized. The role of photovoltaics is described and the increasing importance of thin film technology. The photovoltaic industry is doing well over $108 worth of business in 1984 with a growth rate of about 50 % p.a. Already over 15 % of the output is in the form of thin films, practically all as amorphous hydrogenated silicon. A number of other thin film systems are being actively explored, most of them semiconductor heterojunctions, including CdS: Cu2S and CuInSe2 : CdS. The problems of durability and cost effective production are yielding under major research and development efforts on thin semiconductor films and interfaces.

1996 ◽  
Vol 43 (9) ◽  
pp. 1592-1601 ◽  
Author(s):  
S.J. Bijlsma ◽  
H. van Kranenburg ◽  
K.J.B.M. Nieuwesteeg ◽  
M.G. Pitt ◽  
J.F. Verweij

2014 ◽  
Vol 7 (6) ◽  
pp. 1810-1818 ◽  
Author(s):  
C. J. M. Emmott ◽  
N. J. Ekins-Daukes ◽  
J. Nelson

We assess the net carbon emissions during a transition to photovoltaic power generation, comparing established and emerging thin-film PV technologies.


1996 ◽  
Vol 452 ◽  
Author(s):  
U. Klement ◽  
D. Horst ◽  
F. Ernst

AbstractThe objective of this work is to find a material to replace amorphous hydrogenated silicon used as photosensitive part in the “retina” of an “electronic eye”. For that reason, ZnS, ZnSe, CdS and CdSe were chosen for investigations. Thin films, prepared by chemical vapour deposition, were characterized by transmission electron microscopy. The observed microstructures were correlated with the optoelectronic properties of these materials. CdSe was found to be the most promising material for our application. Hence, the influence of a dielectric interlayer and the effects of additional annealing treatments were analyzed for CdSe and will be discussed with respect to the optimization of the material.


1986 ◽  
Vol 70 ◽  
Author(s):  
M. A. Parker ◽  
K. A. Conrad ◽  
E. A. Schiff

ABSTRACTThe role of the neutral dangling bond defect upon photocarrier processes in undoped amorphous hydrogenated silicon (a-Si:H) is discussed. The evidence that the dangling bond is a simple recombination center is reviewed, and it is shown that this model does not account for photocurrent response time measurements. Experimental data pertinent to the role of electrical contacts upon response time measurements are presented, and it is concluded that contact effects do not account for response-time measurements. The possibility that the dangling bond is primarily an electron trap is discussed.


Sign in / Sign up

Export Citation Format

Share Document