On the role of the substrate position in the CO2 laser CVD of amorphous hydrogenated silicon

ABSTRACTThe role of the neutral dangling bond defect upon photocarrier processes in undoped amorphous hydrogenated silicon (a-Si:H) is discussed. The evidence that the dangling bond is a simple recombination center is reviewed, and it is shown that this model does not account for photocurrent response time measurements. Experimental data pertinent to the role of electrical contacts upon response time measurements are presented, and it is concluded that contact effects do not account for response-time measurements. The possibility that the dangling bond is primarily an electron trap is discussed.

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Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1626642 ◽

2004 ◽

Vol 22 (1) ◽

pp. 53-60 ◽

Cited By ~ 167

Author(s):

T. E. F. M. Standaert ◽

C. Hedlund ◽

E. A. Joseph ◽

G. S. Oehrlein ◽

T. J. Dalton

Keyword(s):

Silicon Carbide ◽

Silicon Nitride ◽

Silicon Dioxide ◽

Film Formation ◽

Hydrogenated Silicon ◽

Amorphous Hydrogenated Silicon ◽

Silicon Silicon ◽

Fluorocarbon Film

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Solar Electricity and Recent Progress in Thin Film Photovoltaics

Australian Journal of Physics ◽

10.1071/ph840449 ◽

1984 ◽

Vol 37 (4) ◽

pp. 449

Author(s):

D Haneman

Keyword(s):

Thin Film ◽

Cost Effective ◽

Semiconductor Films ◽

Major Research ◽

Hydrogenated Silicon ◽

Amorphous Hydrogenated Silicon ◽

Thin Semiconductor ◽

Thin Film Photovoltaics ◽

Solar Electricity

Current methods of producing electricity from solar energy are summarized. The role of photovoltaics is described and the increasing importance of thin film technology. The photovoltaic industry is doing well over $108 worth of business in 1984 with a growth rate of about 50 % p.a. Already over 15 % of the output is in the form of thin films, practically all as amorphous hydrogenated silicon. A number of other thin film systems are being actively explored, most of them semiconductor heterojunctions, including CdS: Cu2S and CuInSe2 : CdS. The problems of durability and cost effective production are yielding under major research and development efforts on thin semiconductor films and interfaces.

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Deposition of Amorphous Hydrogenated Silicon Films by VUV Laser CVD: Influence of Substrate Temperature

MRS Proceedings ◽

10.1557/proc-377-93 ◽

1995 ◽

Vol 377 ◽

Author(s):

H. Karstens ◽

P. Hess

Keyword(s):

Substrate Temperature ◽

Dark Conductivity ◽

Band Gap Energy ◽

Poor Quality ◽

Buffer Gas ◽

Hydrogenated Silicon ◽

Amorphous Hydrogenated Silicon ◽

Influence Of Substrate ◽

Parallel Configuration ◽

Laser Cvd

ABSTRACTAmorphous hydrogenated silicon (a-Si:H) films were deposited from disilane at substrate temperatures between 180 and 390 °C using a F2-laser (157 nm) in a parallel configuration. Material properties such as hydrogen content, SiH and SiH2 group concentration, photo-and dark conductivity, band-gap energy and the Urbach parameter were determined as a function of the deposition temperature. The material with the best optical and electronical properties was found for a substrate temperature of 260 °C. Using argon as the buffer gas instead of helium results in films of poor quality.

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