scholarly journals The Study of Surfaces Using Ion Beams

1990 ◽  
Vol 43 (5) ◽  
pp. 601 ◽  
Author(s):  
DJ O'Connor ◽  
BV King ◽  
RJ MacDonald ◽  
YC Shen ◽  
Xu Chen
Keyword(s):  
Subsequent Development ◽  
Surface Region ◽  
Atomic Layer ◽  
Ion Beams ◽  
Specific Information ◽  
Ion Scattering ◽  
Near Surface ◽  
Methods Of Analysis ◽  
Wide Range ◽  
Compositional Information

The study of surfaces has progressed by the development of techniques which use different probing species in the form of electrons, ions and photons. Specialisation within the use of each probe has resulted in the subsequent development of methods of analysis tuned to obtain specific information about a surface. In this presentation the various uses of ion scattering spectrometry over a wide range of energies will be reviewed to illustrate how it has been successfully used to yield structural and compositional information of the surface atomic layer and the near surface region.

Fundamentals of X-ray Spectrometric Analysis Using Low-Energy Electron Excitation

1990 ◽  
Vol 34 ◽  
pp. 105-121 ◽  
Author(s):  
K. J. Romand ◽  
F. Gaillard ◽  
M. Charbonnier ◽  
D. S. Urch
Keyword(s):  
Analytical Techniques ◽  
Atomic Layer ◽  
Mean Free Path ◽  
Electron Excitation ◽  
Spectrometric Analysis ◽  
Ion Scattering ◽  
X Ray ◽  
Secondary Ions ◽  
Information Depth ◽  
Wide Range

In the field of material analysis and characterization interest has considerably shifted over the last few decades from bulk to surface and very thin film problems. At the present state a wide range of surface analytical techniques - such as x-ray photoelectron (XPS), Auger electron (AES), secondary ion mass (SIMS), ion scattering (ISS) spectroscopies - have become available but every one of them exhibits specific analytical features and information content. Within the context of this paper the main parameter to be considered is the information depth i.e the layer thickness from which the majority of information-bearing particles escape and hence are detected. For XPS and AES, this parameter is associated with the mean-free path of photoelectrans or Auger electrons and typically is in the range from 0.5 to 4 nm. In SIMS the ejected secondary ions are emitted from the outer 2 or 3 atomic layers (i.e. from about 1 nm) while the single-collision binary process occuring in ISS is restricted to atoms from the top most atomic layer (0.2-0.3 nm).

scholarly journals Электролюминесценция слоев Ta-=SUB=-2-=/SUB=-O-=SUB=-5-=/SUB=-, полученных методом молекулярного наслаивания

2020 ◽  
Vol 128 (2) ◽  
pp. 224
Author(s):  
А.П. Барабан ◽  
В.А. Дмитриев ◽  
В.Е. Дрозд ◽  
Ю.В. Петров ◽  
В.А. Прокофьев
Keyword(s):  
Electronic Structure ◽  
Spectral Region ◽  
Spectral Distribution ◽  
Luminescence Band ◽  
Surface Region ◽  
Atomic Layer ◽  
Molecular Layering ◽  
Near Surface ◽  
Layer Deposition ◽  
Ta2o5 Layer

Abstract. The work shows the possibility of using electroluminescence to study the structures of Si-Ta2O5 and Si-SiO2-Ta2O5 and to obtain the information about the electronic structure of the Ta2O5 layer and the properties of the SiO2-Ta2O5 boundary. A model of the electronic structure of the Ta2O5 layer obtained by molecular layering (atomic layer deposition) is proposed to explain the type of spectral distribution of luminescence regardless of the method of its excitation. It is shown that the formation of a Ta2O5 layer on the surface of thermally oxidized silicon is accompanied by transformation of the near-surface region of SiO2 and quenching of the luminescence band in the spectral region of 650 nm.

Using Ion Beams to Modify Nanocrystalline Composites: Co Nanoparticles in Sapphire

2001 ◽  
Vol 703 ◽  
Author(s):  
A. Meldrum ◽  
K.S. Beaty ◽  
M. Lam ◽  
C.W. White ◽  
R.A. Zuhr ◽  
...  
Keyword(s):  
Surface Region ◽  
Amorphous Layer ◽  
Ion Beams ◽  
Near Surface ◽  
Nanocrystalline Composites ◽  
Transmission Electron ◽  
Co Nanoparticles ◽  
20 Nm ◽  
And Control ◽  
Single Crystal Sapphire

ABSTRACTIon implantation and thermal processing were used to create a layer of Co nanoclusters embedded in the near-surface region of single-crystal sapphire. The Co nanoparticles ranged in size from 2-20 nm and were crystallographically aligned with the host sapphire. Specimens were irradiated with Xe and Pt ions, and the microstructural evolution of the nanoclusters was investigated by transmission electron microscopy. With increasing Pt or Xe ion dose, the Co nanoparticles lost their initially excellent faceting, although they remained crystalline. The host Al2O3 became amorphous and the resulting microstructure consisted of a buried amorphous layer containing the still-crystalline Co nanoparticles. EDS mapping and electron diffraction were used to determine the distribution of the implanted species, and the magnetic properties of the composite were measured with a SQUID magnetometer. The results show that ion beams can be applied to modify and control the properties of ferromagnetic nanocomposites, and, combined with lithographic techniques, will find applications in exercising fine-scale spatial control over the properties of magnetic materials.

Ion Beam Processing

MRS Bulletin ◽  
1987 ◽  
Vol 12 (2) ◽  
pp. 18-21
Author(s):  
C.W. White
Keyword(s):  
Ion Implantation ◽  
Large Scale ◽  
Wide Spectrum ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Surface Region ◽  
Ion Beams ◽  
Group V ◽  
Near Surface ◽  
Research Activities

Ion beams are used extensively in materials research for processing and synthesis as well as for characterization. In the last few years, enormous advances have been made regarding the use of ion beams for processing or synthesis, and this issue of the MRS BULLETIN will review some of those advances. (The use of ion beams for materials characterization will be the subject of a future issue of the BULLETIN.) The areas covered in this issue are ion implantation, ion beam mixing, ion-assisted deposition, and direct ion beam deposition. For each area, recognized experts in the field prepared overview articles that should be very interesting to those who are not active in the field, and that should be useful to other experts in the field.The first large-scale use of ion beams for materials modification took place in the semiconductor industry more than 20 years ago when ion implantation began to be used to dope the near-surface region of silicon with Group III or Group V dopants. The use of ion implantation in the semiconductor industry has undergone explosive growth, and today almost all electronic devices are fabricated utilizing at lest one ion implantation step.In addition to the semiconductor area, research is being carried out using ion implantation in a multitude of other areas which include ceramics, metals and alloys, insulators, etc. The article on “Ion Implantation” by S.T. Picraux and P.S. Peercy provides an excellent overview of current research activities involving ion implantation of a wide spectrum of materials.

scholarly journals Ion Scattering Spectrometry

1980 ◽  
Vol 33 (5) ◽  
pp. 843 ◽  
Author(s):  
RJ MacDonald
Keyword(s):  
Interatomic Potential ◽  
Photon Emission ◽  
Target Surface ◽  
Surface Region ◽  
Crystallographic Structure ◽  
Ion Scattering ◽  
Near Surface ◽  
Double Collision ◽  
Neutralization Factor

The scattering of ions from the surface and near surface region is a common method of analyzing solid surfaces. The basic principles of ion scattering spectrometry are reviewed with emphasis on those factors which affect the interpretation of the scattering measurements. In particular we emphasize the role of the interatomic potential and the neutralization factor involved in ion-surface scattering. Several aspects of ion scattering spectrometry are then outlined, including its application to studies of the composition and crystallographic structure of surfaces. Some factors of ion scattering spectrometry peculiar to surfaces are mentioned, e.g. the sequential 'double' collision event. The use of photon emission studies as a means of inferring something of the neutralization processes involved is briefly outlined, emphasizing the study of polarized emission from scattered ions at glancing incidence to the target surface.

SURFACE AND INTERFACE INVESTIGATION OF NANOMETRIC DIELECTRIC FILMS ON Si AND ON SiC

2002 ◽  
Vol 09 (01) ◽  
pp. 393-399 ◽  
Author(s):  
E. B. O. DA ROSA ◽  
C. KRUG ◽  
C. RADTKE ◽  
R. P. PEZZI ◽  
L. MIOTTI ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Surface Region ◽  
Oxidation Products ◽  
Dielectric Films ◽  
Ion Scattering ◽  
Initial Oxidation ◽  
Near Surface ◽  
Surface And Interface ◽  
Low Energy Ion Scattering

Dielectric films on Si or SiC were investigated using angle-resolved X-ray photoelectron spectroscopy (ARXPS) and ion beam analysis techniques, namely high and low energy ion scattering (RBS and LEIS) and narrow nuclear resonance profiling (NRP) combined with isotopic substitution. For the Si substrate, attention was focused on the thermal stability of materials candidate to replacing SiO 2 in Si-based microelectronic devices (so-called "high-k dielectrics"): Al 2 O 3, ZrSi x O y, ZrAl x O y, HfSi x O y, and GdSi x O y. Mobility of different atomic species — especially Si and O — was observed at both the surface of the films and the interface with Si. Such atomic transport may have serious consequences concerning application of these materials in the microelectronics industry. For the SiC substrate, attention was focused on the initial stages of thermal oxidation in O 2, seeking an understanding of its poorer electrical quality as compared to SiO 2– Si . It was found that the initial oxidation products are silicon oxycarbides ( SiC x O y), while for longer oxidation times a mixture of SiC x O y and SiO2 is formed in the near surface region of the growing film. The composition of the near surface region of such thin films is very similar to that reported in previous investigations for the near interface region when thicker oxides films are grown on SiC.

scholarly journals Физические основы формирования гетероваризонной структуры на основе кремния

2021 ◽  
Vol 91 (11) ◽  
pp. 1678
Author(s):  
М.К. Бахадирханов ◽  
С.Б. Исамов
Keyword(s):  
Crystal Structure ◽  
Solar Spectrum ◽  
Surface States ◽  
Surface Region ◽  
Ir Radiation ◽  
Near Surface ◽  
Fundamental Parameters ◽  
Wide Range ◽  
Absorption Of Light ◽  
Unit Cells

With the formation of binary unit cells based on the AII and BVI, AIII, and BV elements, a heterovarizonic structure was obtained in the near-surface region of silicon, without destroying the crystal structure, without surface states with a thickness of about 5 μm. The resulting heterovarizonic structure has special fundamental parameters that ensure the absorption of light in a wide range of the solar spectrum from UV to IR radiation with λ = 0.1-3 μm, i.e., it covers the entire solar spectrum.

Surface Disordering and Nitrogen Loss in GaN under Ion Bombardment

2000 ◽  
Vol 622 ◽  
Author(s):  
S.O. Kucheyev ◽  
J.S. Williams ◽  
C. Jagadish ◽  
J. Zou ◽  
M. Toth ◽  
...  
Keyword(s):  
Nitrogen Loss ◽  
Surface Region ◽  
Ion Bombardment ◽  
High Dose ◽  
Near Surface ◽  
Lattice Disorder ◽  
Transmission Electron ◽  
Cathodoluminescence Spectroscopy ◽  
Wide Range ◽  
Strong Surface

ABSTRACTThe damage build-up and amorphization behavior in wurtzite GaN films under a wide range of implant conditions are studied by Rutherford backscattering / channeling spectrometry, transmission electron microscopy, and cathodoluminescence spectroscopy. A strong surface peak of lattice disorder, in addition to the expected damage peak in the region of the maximum of nuclear energy loss, has been observed for all implant conditions of this study. Capping of GaN with SiOx and SixNy layers prior to implantation does not eliminate surface disordering. This may suggest that nitrogen loss is not the main reason for the observed enhanced surface disorder, but, rather, the GaN surface acts as a strong sink for migrating point defects. However, pronounced loss of N during ion bombardment is observed for high dose implantation when the near-surface region is amorphized. Moreover, after amorphization, annealing at temperatures above about 400°C leads to complete decomposition of the near-surface layer.

A Study of the Decomposition of GaN during Annealing over a Wide Range of Temperatures

2002 ◽  
Vol 743 ◽  
Author(s):  
M. A. Rana ◽  
H. W. Choi ◽  
M. B. H. Breese ◽  
T. Osipowicz ◽  
S. J. Chua ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapor ◽  
Depth Resolution ◽  
Surface Region ◽  
Organic Chemical ◽  
Near Surface ◽  
Wide Range ◽  
Metal Organic ◽  
Amorphous Surface ◽  
Nitride Layers

ABSTRACTAnnealing experiments were carried out on gallium nitride layers, which were grown on sapphire through Metal Organic Chemical Vapor Deposition (MOCVD). Rutherford Backscattering Spectrometry (RBS) was performed on as-grown and annealed GaN samples using a 2 MeV proton beam to study the stoichiometric changes in the near-surface region (750 nm) with depth resolution better than 50 nm. No decomposition was measured for temperatures o up to 800 °C. Decomposition in the near-surface region increased rapidly with a further increase o of temperature, resulting in a near-amorphous surface-region for annealing at 1100 °C. The depth profiles of nitrogen and incorporated oxygen in the decomposed GaN are extracted from the nanoscale RBS data for different annealing temperatures. The surface roughness of the GaN layers observed by atomic force microscopy (AFM) is consistent with RBS decomposition measurements. We describe the range of annealing conditions under which negligible decomposition of GaN is observed, which is important in assessing optimal thermal processing conditions of GaN for both conventional and nanoscale optoelectronic devices.

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