scholarly journals Электролюминесценция слоев Ta-=SUB=-2-=/SUB=-O-=SUB=-5-=/SUB=-, полученных методом молекулярного наслаивания

2020 ◽  
Vol 128 (2) ◽  
pp. 224
Author(s):  
А.П. Барабан ◽  
В.А. Дмитриев ◽  
В.Е. Дрозд ◽  
Ю.В. Петров ◽  
В.А. Прокофьев
Keyword(s):  
Electronic Structure ◽  
Spectral Region ◽  
Spectral Distribution ◽  
Luminescence Band ◽  
Surface Region ◽  
Atomic Layer ◽  
Molecular Layering ◽  
Near Surface ◽  
Layer Deposition ◽  
Ta2o5 Layer

Abstract. The work shows the possibility of using electroluminescence to study the structures of Si-Ta2O5 and Si-SiO2-Ta2O5 and to obtain the information about the electronic structure of the Ta2O5 layer and the properties of the SiO2-Ta2O5 boundary. A model of the electronic structure of the Ta2O5 layer obtained by molecular layering (atomic layer deposition) is proposed to explain the type of spectral distribution of luminescence regardless of the method of its excitation. It is shown that the formation of a Ta2O5 layer on the surface of thermally oxidized silicon is accompanied by transformation of the near-surface region of SiO2 and quenching of the luminescence band in the spectral region of 650 nm.

Variations in the electronic structure of the silicon near-surface region during implantation of phosphorus and boron ions

2007 ◽  
Vol 52 (8) ◽  
pp. 898-900 ◽  
Author(s):  
M. T. Normuradov ◽  
A. K. Tashatov ◽  
A. S. Rysbaev ◽  
Zh. B. Khuzhaniyazov ◽  
Yu. Yu. Yuldashev ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Surface Region ◽  
Near Surface ◽  
Boron Ions

scholarly journals In situ tuning of electronic structure of catalysts using controllable hydrogen spillover for enhanced selectivity

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Mi Xiong ◽  
Zhe Gao ◽  
Peng Zhao ◽  
Guofu Wang ◽  
Wenjun Yan ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Active Sites ◽  
Pt Nanoparticles ◽  
Atomic Layer ◽  
Hydrogen Spillover ◽  
General Strategy ◽  
Layer Deposition ◽  
Styrene Derivatives ◽  
Enhanced Selectivity

Abstract In situ tuning of the electronic structure of active sites is a long-standing challenge. Herein, we propose a strategy by controlling the hydrogen spillover distance to in situ tune the electronic structure. The strategy is demonstrated to be feasible with the assistance of CoOx/Al2O3/Pt catalysts prepared by atomic layer deposition in which CoOx and Pt nanoparticles are separated by hollow Al2O3 nanotubes. The strength of hydrogen spillover from Pt to CoOx can be precisely tailored by varying the Al2O3 thickness. Using CoOx/Al2O3 catalyzed styrene epoxidation as an example, the CoOx/Al2O3/Pt with 7 nm Al2O3 layer exhibits greatly enhanced selectivity (from 74.3% to 94.8%) when H2 is added. The enhanced selectivity is attributed to the introduction of controllable hydrogen spillover, resulting in the reduction of CoOx during the reaction. Our method is also effective for the epoxidation of styrene derivatives. We anticipate this method is a general strategy for other reactions.

DEPTH-RESOLVED SOFT X-RAY EMISSION SPECTROSCOPY OF Si-BASED MATERIALS

2002 ◽  
Vol 09 (01) ◽  
pp. 461-467 ◽  
Author(s):  
A. V. ZIMINA ◽  
A. S. SHULAKOV ◽  
S. EISEBITT ◽  
W. EBERHARDT
Keyword(s):  
Electronic Structure ◽  
Depth Resolution ◽  
Surface Region ◽  
Primary Electron ◽  
Depth Information ◽  
Near Surface ◽  
X Ray ◽  
Chemical Phase ◽  
Information Depth ◽  
Postimplantation Annealing

We discuss a soft X-ray emission (SXE) valence band (VB) spectroscopy method for the study of the electronic structure and chemical phase composition of solids in a near-surface region with depth resolution. The depth information is obtained by variation of the energy of the incident electron beam used to excite the SXE spectra. As the information depth can be varied from about 1 nm to 1 μm in silicon, this method is suitable for the investigation of materials of modern micro- and nanoelectronics. VB → core level (Si 2p or Al 2p) transitions in Si-based materials are used to demonstrate the technique. It was found that the contribution of the signal from the near-surface region (< 1.5 nm) can be substantial (up to 50%) when the primary electron energy does not exceed the Si L 2,3 threshold by more than 150 eV. The technique is applied to Al impurities in a Si matrix, produced by ion implantation. The electronic structure at the Al sites and depth distribution of the Al impurity change markedly after postimplantation annealing. The observed electronic structure after annealing is in agreement with electronic structure calculations for substitutional Al impurities in a crystalline Si lattice.

scholarly journals Learnings from an Open Science Effort: Virtual Project on the History of ALD

2018 ◽  
Author(s):  
Riikka Puurunen
Keyword(s):  
Atomic Layer ◽  
Open Science ◽  
Early History ◽  
Atomic Layer Epitaxy ◽  
Molecular Layering ◽  
Journal Articles ◽  
Layer Deposition ◽  
History Of ◽  
Virtual Project ◽  
Made In

This work summarizes learnings from an Open Science effort “Virtual project on the History of ALD” (VPHA), started in 2013 to clarify the early history of atomic layer deposition (ALD). ALD is a multi-tool of nanotechnology and has been e.g. enabler of the continuation of Moore’s law of transistor scaling. ALD has been developed historically through two independent routes: atomic layer epitaxy (ALE) and molecular layering (ML). Especially the details on ML have remained little known to a broader audience. In this contribution, learnings in VPHA are seen from the viewpoint of its voluntary coordinator (the author self) related to historical details of ALD as well as from an organizational viewpoint and some other viewpoints. Selected details related to ALD’s history not fully accurately described in three earlier review articles are pointed out. The work made in VPHA has resulted in journal articles, presentations and an exhibition, and VPHA has in part provided the foundation for granting the 2018 Millennium Technology Prize to Dr. Tuomo Suntola. At the time of writing this contribution, in July 2018, VPHA is still on-going, and more volunteers are welcome to join the effort.

scholarly journals The Study of Surfaces Using Ion Beams

1990 ◽  
Vol 43 (5) ◽  
pp. 601 ◽  
Author(s):  
DJ O'Connor ◽  
BV King ◽  
RJ MacDonald ◽  
YC Shen ◽  
Xu Chen
Keyword(s):  
Subsequent Development ◽  
Surface Region ◽  
Atomic Layer ◽  
Ion Beams ◽  
Specific Information ◽  
Ion Scattering ◽  
Near Surface ◽  
Methods Of Analysis ◽  
Wide Range ◽  
Compositional Information

The study of surfaces has progressed by the development of techniques which use different probing species in the form of electrons, ions and photons. Specialisation within the use of each probe has resulted in the subsequent development of methods of analysis tuned to obtain specific information about a surface. In this presentation the various uses of ion scattering spectrometry over a wide range of energies will be reviewed to illustrate how it has been successfully used to yield structural and compositional information of the surface atomic layer and the near surface region.

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