Optimum heat treatment condition for PZT thin films prepared by Sol-Gel

1999 ◽  
Vol 232 (1) ◽  
pp. 65-70
Author(s):  
Ai-Li Ding ◽  
Wel-Gen Luo ◽  
Pingsun Qiu ◽  
Kwang Soo No
2012 ◽  
Vol 192-193 ◽  
pp. 556-561 ◽  
Author(s):  
Qiang Zhu ◽  
Stephen Midson ◽  
Chang Wei Ming ◽  
Helen V. Atkinson

Commercial semi-solid cast impellers are produced from Al-Si-Cu alloys heat treated to the T6 temper. The study described in this paper involved the identification of casting and heat treatment parameters to produce semi-solid processed turbocharger impellers from a silicon-free, higher strength 201 alloy. Casting parameters were identified which minimized hot tearing in the alloy 201 impellers. A series of heat treatment studies were performed to determine optimum heat treatment parameters. The T71 temper was identified as the preferred heat treatment condition to produce high strength as well as superior elongation. The results from mechanical property measurements conducted on the T71 heat treated impellers are reported. Optical and scanning electron microscopy (SEM) were also used to characterize the microstructure of alloy 201 impellers before and after heat treatment, and representative microstructures are presented.


2007 ◽  
Vol 280-283 ◽  
pp. 831-834 ◽  
Author(s):  
Lan Zhao ◽  
Dao Li Zhang ◽  
Gang Du ◽  
Jian Mei Xu ◽  
Dong Xiang Zhou

Antimony-doped tin oxide thin films have a range of technical applications as conductive coatings, and sol-gel processing seems to offer some advantages over other coating techniques. In this study, the sol was prepared by sol-gel approach from SnO2·H2O and SbCl3 in alcohol. It was found that the heat-treatment temperature and doping level have strong influences on the microstructure and composition of Sb: SnO2 films. The SnO2 crystals exist mainly as tetragonal rutile structure. The optimum heat-treatment temperature is about 450 ~ 500°C, and the film is composed with nanocrystals and nano-pores. Microstructure and the electrical behaviors of Sb-doped SnO2 thin films derived by sol-gel process were investigated.


1994 ◽  
Vol 361 ◽  
Author(s):  
Chang Jung Kim ◽  
Dae Sung Yoon ◽  
Joon Sung Lee ◽  
Chaun Gi Choi ◽  
Won Jong Lee ◽  
...  

ABSTRACTThe (100), (111) and randomly oriented PZT thin films were fabricated on Pt/Ti/Coming 7059 glass using sol-gel method. The thin films having different orientation were fabricated by different drying conditions for pyrolysis. The preferred orientations of the PZT thin films were observed using XRD, rocking curves, and pole figures. The microstructures were investigated using SEM. The hysteresis loops and capacitance-voltage characteristics of the films were investigated using a standardized ferroelectric test system. The dielectric constant and current-voltage characteristics of the films were investigated using an impedance analyzer and pA meter, respectively. The films oriented in a particular direction showed superior electrical characteristics to the randomly oriented films.


2007 ◽  
Vol 336-338 ◽  
pp. 505-508
Author(s):  
Cheol Jin Kim ◽  
In Sup Ahn ◽  
Kwon Koo Cho ◽  
Sung Gap Lee ◽  
Jun Ki Chung

LiNiO2 thin films for the application of cathode of the rechargeable battery were fabricated by Li ion diffusion on the surface oxidized NiO layer. Bi-axially textured Ni-tapes with 50 ~ 80 μm thickness were fabricated using cold rolling and annealing of Ni-rod prepared by cold isostatic pressing of Ni powder. Surface oxidation of Ni-tapes were conducted using tube furnace or line-focused infrared heater at 700 °C for 150 sec in flowing oxygen atmosphere, resulted in NiO layer with thickness of 400 and 800 μm, respectively. After Li was deposited on the NiO layer by thermal evaporation, LiNiO2 was formed by Li diffusion through the NiO layer during subsequent heat treatment using IR heater with various heat treatment conditions. IR-heating resulted in the smoother surface and finer grain size of NiO and LiNiO2 layer compared to the tube-furnace heating. The average grain size of LiNiO2 layer was 0.5~1 μm, which is much smaller than that of sol-gel processed LiNiO2. The reacted LiNiO2 region showed homogeneous composition throughout the thickness and did not show any noticeable defects frequently found in the solid state reacted LiNiO2, but crack and delamination between the reacted LiNiO2 and Ni occurred as the reaction time increased above 4hrs.


1997 ◽  
Vol 493 ◽  
Author(s):  
Seung-Hyun Kim ◽  
J. G. Hong ◽  
J. C. Gunter ◽  
H. Y. Lee ◽  
S. K. Streiffer ◽  
...  

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.


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