Determination of the energy band diagram for a-Si1-xYx:H/c-Si (Y = C or Ge) heterojunctions: Analysis of transport properties

1991 ◽  
Vol 64 (6) ◽  
pp. 723-739 ◽  
Author(s):  
By M. Cuniot ◽  
N. Lequeux
2021 ◽  
Vol 51 (1) ◽  
Author(s):  
Rafał Antoni Bogaczewicz ◽  
Ewa Popko ◽  
Katarzyna Renata Gwóźdź

Recently it has been found that the heterostructures of n-ZnO/p-Si are promising photovoltaic alternatives to silicon homojunctions. It is well known that the energy band diagram of a heterostructure is crucial for the understanding of its operation. This paper analyzes the ZnO/p-Si heterostructure band by using free AMPS-1D computer program simulations. The obtained numerical results are compared with theoretical calculations based on the depletion region approximation model and the Poisson’s equation for electric potential. The results of the simulation are also compared with the experimental C-V characteristics of the test n-ZnO/p-Si heterostructure. The simulated C-V characteristics is qualitatively consistent with the experimental C-V curve, which confirms the correctness of the determined band diagram of the n-ZnO/p-Si heterostructure.


2011 ◽  
Vol 8 (2) ◽  
pp. 581-587
Author(s):  
Baghdad Science Journal

Crystalline In2O3 Thin films have been prepared by flash evaporation. We have studied the crystal structure of as deposited at 303K and annealed at 523K using X-ray diffraction. The Hall Effect measurements confirmed that electrons were predominant charges in the conduction process (i.e n-type).It is found that the absorption coefficient of the prepared films decreases with increasing Ta. The d.c conductivity study showed that the conductivity increase with increasing Ta , whereas the activation energy decreases with increasing Ta. Also we study the barrier tunneling diode for In2O3/Si heterostructure grown by Flash evaporation technique. (capacitance-voltage C-V) spectroscopy measurements were performed at 303 K and at the annealing temperature 523K. The built in voltage has been determined and it depends strongly on the annealing process of the heterojunction. From all above measurements we assumed an energy band diagram for In2O3 /Si(P-type) heterojunction.


2020 ◽  
Vol 44 (29) ◽  
pp. 12473-12485 ◽  
Author(s):  
Veena Mounasamy ◽  
Ganesh Kumar Mani ◽  
Dhivya Ponnusamy ◽  
Kazuyoshi Tsuchiya ◽  
P. R. Reshma ◽  
...  

An energy band diagram of the V2O5–CdO thin film and illustration of the methane (CH4) gas sensing mechanism with band bending.


2019 ◽  
Vol 34 (12) ◽  
pp. 125007 ◽  
Author(s):  
B R Borodin ◽  
F A Benimetskiy ◽  
M S Dunaevskiy ◽  
V A Sharov ◽  
A N Smirnov ◽  
...  

2020 ◽  
pp. 412719
Author(s):  
Sharifah Nurain Syed Nasir ◽  
Nurul Aida Mohamed ◽  
Mohamad Azri Tukimon ◽  
Mohamad Firdaus Mohamad Noh ◽  
Nurul Affiqah Arzaee ◽  
...  

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