Grain-scale strain mapping for analysis of slip activity in polycrystalline B2 RuAl

Ti3Al is an ordered intermetallic compound having the DO19-type superlattice structure. The compound exhibits very limited ductility in tension below 700°C because of a pronounced planarity of slip and the absence of a sufficient number of independent slip systems. Significant differences in slip behavior in the compound as a result of differences in strain rate and mode of deformation are reported here.Figure 1 is a comparison of dislocation substructures in polycrystalline Ti3Al specimens deformed in tension, creep, and fatigue. Slip activity on both the basal and prism planes is observed for each mode of deformation. The dominant slip vector in unidirectional deformation is the a-type (b) = <1120>) (Fig. la). The dislocations are straight, occur for the most part in a screw orientation, and are arranged in planar bands. In contrast, the dislocation distribution in specimens crept at 700°C (Fig. lb) is characterized by a much reduced planarity of slip, a tangled dislocation arrangement instead of planar bands, and an increased incidence of nonbasal slip vectors.

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Atomic Strain Mapping of Late‐Transition Metal High‐Index Facets Nanoparticle for Electrocatalysis

Angewandte Chemie ◽

10.1002/ange.202110636 ◽

2021 ◽

Author(s):

Bolong Huang

Keyword(s):

Transition Metal ◽

High Index ◽

Late Transition Metal ◽

Strain Mapping ◽

Late Transition

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Strain Mapping Using EBSD Cross Correlation and Raman Methods

Microscopy and Microanalysis ◽

10.1017/s1431927618005299 ◽

2018 ◽

Vol 24 (S1) ◽

pp. 960-961

Author(s):

M.D. Vaudin ◽

AJ Gayle ◽

L.H. Friedman ◽

R.F. Cook

Keyword(s):

Cross Correlation ◽

Strain Mapping

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3-D High-Density Strain Mapping Procedure Based on High-Resolution CT

Materials Science Forum ◽

10.4028/www.scientific.net/msf.539-543.2377 ◽

2007 ◽

Vol 539-543 ◽

pp. 2377-2382 ◽

Cited By ~ 1

Author(s):

Masakazu Kobayashi ◽

Hiroyuki Toda ◽

Tomomi Ohgaki ◽

Kentaro Uesugi ◽

David S. Wilkinson ◽

...

Keyword(s):

High Resolution ◽

Local Strain ◽

High Ratio ◽

High Density ◽

Strain Mapping ◽

Mapping Procedure ◽

Model Method ◽

Model Sample ◽

Alumina Particles ◽

X Ray Computed

A tracking procedure for the high-resolution X-ray computed tomography (CT) has been developed in order to measure 3-D local strain within a deforming material in high-density. A dispersion-strengthened copper alloy model sample with alumina particles, which contains micropores, was visualized by the synchrotron radiation CT. The pores observed in reconstructed CT volumes were used as tracking markers. The developed tracking method using a set of matching parameters, which classifies matched, pended and rejected markers, exhibited high ratio of success tracking. Furthermore, the ratio was improved by applying the spring model method, which is one of the particle image velocity (PIV) methods utilized in the field of the fluid mechanics, to the pended markers. The method based on the image analysis of CT imaging volumes provides us 3-D high-density strain mapping.

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Strain Mapping in a Graphene Monolayer Nanocomposite

ACS Nano ◽

10.1021/nn2002079 ◽

2011 ◽

Vol 5 (4) ◽

pp. 3079-3084 ◽

Cited By ~ 108

Author(s):

Robert J. Young ◽

Lei Gong ◽

Ian A. Kinloch ◽

Ibtsam Riaz ◽

Rashed Jalil ◽

...

Keyword(s):

Graphene Monolayer ◽

Strain Mapping

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Designing a standard for strain mapping: HR-EBSD analysis of SiGe thin film structures on Si

Ultramicroscopy ◽

10.1016/j.ultramic.2014.09.007 ◽

2015 ◽

Vol 148 ◽

pp. 94-104 ◽

Cited By ~ 19

Author(s):

M.D. Vaudin ◽

W.A. Osborn ◽

L.H. Friedman ◽

J.M. Gorham ◽

V. Vartanian ◽

...

Keyword(s):

Thin Film ◽

Ebsd Analysis ◽

Strain Mapping

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Error Quantification in Strain Mapping Methods

Microscopy and Microanalysis ◽

10.1017/s1431927607070407 ◽

2007 ◽

Vol 13 (5) ◽

pp. 320-328 ◽

Cited By ~ 16

Author(s):

Elisa Guerrero ◽

Pedro Galindo ◽

Andrés Yáñez ◽

Teresa Ben ◽

Sergio I. Molina

Keyword(s):

Electron Microscopy ◽

Geometric Phase ◽

Step Response ◽

Strain Mapping ◽

Error Quantification ◽

Transmission Electron ◽

Mapping Techniques ◽

Microscopy Images ◽

Real State

In this article a method for determining errors of the strain values when applying strain mapping techniques has been devised. This methodology starts with the generation of a thickness/defocus series of simulated high-resolution transmission electron microscopy images of InAsxP1−x/InP heterostructures and the application of geometric phase. To obtain optimal defocusing conditions, a comparison of different defocus values is carried out by the calculation of the strain profile standard deviations among different specimen thicknesses. Finally, based on the analogy of real state strain to a step response, a characterization of strain mapping error near an interface is proposed.

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