Si-integrated ultrathin films of phase-pure Y3Fe5O12 (YIG) via novel two-step rapid thermal anneal

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.

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TEM characterization of WSix films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100171973 ◽

1994 ◽

Vol 52 ◽

pp. 848-849

Author(s):

V. C. Kannan ◽

S. M. Merchant ◽

R. B. Irwin ◽

A. K. Nanda ◽

M. Sundahl ◽

...

Keyword(s):

Integrated Circuits ◽

Vapor Deposition ◽

High Purity ◽

Physical Vapor Deposition ◽

Thermal Treatments ◽

Rapid Thermal Anneal ◽

Tungsten Silicide ◽

Tem Characterization ◽

Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

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Substrate templated synthesis of single-phase and uniform Zr-porphyrin-based metal–organic frameworks

Inorganic Chemistry Frontiers ◽

10.1039/c9qi01045a ◽

2020 ◽

Vol 7 (1) ◽

pp. 221-231

Author(s):

Seong Won Hong ◽

Ju Won Paik ◽

Dongju Seo ◽

Jae-Min Oh ◽

Young Kyu Jeong ◽

...

Keyword(s):

Chemical Bath Deposition ◽

Single Phase ◽

Metal Organic Frameworks ◽

Templated Synthesis ◽

Pore Structures ◽

Phase Pure ◽

Metal Organic ◽

Cbd Method

We successfully demonstrate that the chemical bath deposition (CBD) method is a versatile method for synthesizing phase-pure and uniform MOFs by controlling their nucleation stages and pore structures.

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Electrical Damage Due to Low Energy Plasma Processing of GaAs Structures

MRS Proceedings ◽

10.1557/proc-223-209 ◽

1991 ◽

Vol 223 ◽

Author(s):

Hans P. Zappe ◽

Gudrun Kaufel

Keyword(s):

Chemical Processes ◽

Low Energy ◽

Electrical Behavior ◽

Rapid Thermal Anneal ◽

High Temperature Anneal ◽

Significant Damage ◽

Low Energies ◽

Long Time ◽

Physical Plasma

ABSTRACTThe effect of numerous plasma reative ion etch and physical milling processes on the electrical behavior of GaAs bulk substrates has been investigated by means of electric microwave absorption. It was seen that plasma treatments at quite low energies may significantly affect the electrical quality of the etched semiconductor. Predominantly physical plasma etchants (Ar) were seen to create significant damage at very low energies. Chemical processes (involving Cl or F), while somewhat less pernicious, also gave rise to electrical substrate damage, the effect greater for hydrogenic ambients. Whereas rapid thermal anneal treatments tend to worsen the electrical integrity, some substrates respond positively to long-time high temperature anneal steps.

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Phase pure and well crystalline Cr2AlB2: A key precursor for two-dimensional CrB

Journal of Material Science and Technology ◽

10.1016/j.jmst.2019.03.031 ◽

2019 ◽

Vol 35 (8) ◽

pp. 1593-1600 ◽

Cited By ~ 15

Author(s):

Haiming Zhang ◽

Fu-Zhi Dai ◽

Huimin Xiang ◽

Xiaohui Wang ◽

Zhili Zhang ◽

...

Keyword(s):

Two Dimensional ◽

Phase Pure

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Calculation of stopping powers in ordered ultrathin films

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(89)90989-0 ◽

1989 ◽

Vol 40-41 ◽

pp. 321-323 ◽

Cited By ~ 3

Author(s):

S.B. Trickey ◽

D.E. Meltzer ◽

J.R. Sabin

Keyword(s):

Ultrathin Films

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Scanning Thermal Microscopy of Ultrathin Films: Numerical Studies Regarding Cantilever Displacement, Thermal Contact Areas, Heat Fluxes, and Heat Distribution

Nanomaterials ◽

10.3390/nano11020491 ◽

2021 ◽

Vol 11 (2) ◽

pp. 491

Author(s):

Christoph Metzke ◽

Fabian Kühnel ◽

Jonas Weber ◽

Günther Benstetter

Keyword(s):

Thermal Properties ◽

Ultrathin Films ◽

Hexagonal Boron Nitride ◽

Thermal Contact ◽

Heat Transfer Process ◽

Heat Propagation ◽

Heat Fluxes ◽

Detailed Knowledge ◽

Scanning Thermal Microscopy ◽

Thermal Microscopy

New micro- and nanoscale devices require electrically isolating materials with specific thermal properties. One option to characterize these thermal properties is the atomic force microscopy (AFM)-based scanning thermal microscopy (SThM) technique. It enables qualitative mapping of local thermal conductivities of ultrathin films. To fully understand and correctly interpret the results of practical SThM measurements, it is essential to have detailed knowledge about the heat transfer process between the probe and the sample. However, little can be found in the literature so far. Therefore, this work focuses on theoretical SThM studies of ultrathin films with anisotropic thermal properties such as hexagonal boron nitride (h-BN) and compares the results with a bulk silicon (Si) sample. Energy fluxes from the probe to the sample between 0.6 µW and 126.8 µW are found for different cases with a tip radius of approximately 300 nm. A present thermal interface resistance (TIR) between bulk Si and ultrathin h-BN on top can fully suppress a further heat penetration. The time until heat propagation within the sample is stationary is found to be below 1 µs, which may justify higher tip velocities in practical SThM investigations of up to 20 µms−1. It is also demonstrated that there is almost no influence of convection and radiation, whereas a possible TIR between probe and sample must be considered.

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