Simulations of side-wall profiles in reactive ion etching

AbstractThe gate length of GaAs MESFETs is required to be shorter for higher microwave frequency applications. The side-wall process using silicon nitride is one of the effective processes to fabricate short gate length GaAs MESFETs. The side-wall process consists of deposition and anisotropic etching of silicon nitride and delivers plasma induced damages on the channel layers of the devices. In this study, the effects of plasma induced damage on the channel layers of ion implanted GaAs MESFETs during reactive ion etching and plasma ashing processes have been investigated. The plasma induced damage was characterized by sheet resistance measurement, Xray photoelectron spectroscopy(XPS) and auger electron spectroscopy(AES) of different etched surfaces, compared with a chemically wet-etched reference surface. Also the effect of the plasma induced damage on the device performance was investigated. As a result, plasma ashing can deteriorate the plasma-induced damage by RIE.

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Surface Morphology of Silicon Waveguide after Reactive Ion Etching (RIE)

Coatings ◽

10.3390/coatings9080478 ◽

2019 ◽

Vol 9 (8) ◽

pp. 478

Author(s):

Yu Zheng ◽

Piaopiao Gao ◽

Lianqiong Jiang ◽

Xiaochao Kai ◽

Ji’an Duan

Keyword(s):

Electron Beam ◽

Reactive Ion Etching ◽

Side Wall ◽

Average Roughness ◽

Ion Etching ◽

Silicon Waveguide ◽

Wall Boundary ◽

Boundary Tracing ◽

Wall Profile ◽

Correlation Statistics

The side wall profile roughness of the silicon waveguide prepared by electron beam lithography and reactive ion etching is extracted by using the boundary tracing method. The maximum, minimum, and average roughness values are extracted from the side wall boundary, and the changes of the side wall boundary of waveguide after electron beam exposure and reactive ion etching were compared. The roughness variation of the waveguide side wall is similar with the same length. And roughness from the bottom of the waveguide etched region is measured directly by laser confocal microscope and roughness correlation statistics are also obtained.

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Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

10.21236/ada310955 ◽

1996 ◽

Author(s):

George F. McLane ◽

Paul Cooke ◽

Robert P. Moerkirk

Keyword(s):

Reactive Ion Etching ◽

Ion Etching

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Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

Semiconductors ◽

10.1134/s1063782620060111 ◽

2020 ◽

Vol 54 (6) ◽

pp. 672-676

Author(s):

L. K. Markov ◽

I. P. Smirnova ◽

M. V. Kukushkin ◽

A. S. Pavluchenko

Keyword(s):

Reactive Ion Etching ◽

Surface Profile ◽

Mixture Composition ◽

Gas Mixture ◽

Ion Etching

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Reactive ion etching of III-V compounds using C2H6/H2

Electronics Letters ◽

10.1049/el:19880543 ◽

1988 ◽

Vol 24 (13) ◽

pp. 798 ◽

Cited By ~ 28

Author(s):

T. Matsui ◽

H. Sugimoto ◽

T. Ohishi ◽

H. Ogata

Keyword(s):

Reactive Ion Etching ◽

Ion Etching

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GaInAsP/InP mass transport laser monolithically integrated with photodetector using reactive ion etching

Electronics Letters ◽

10.1049/el:19890639 ◽

1989 ◽

Vol 25 (15) ◽

pp. 954 ◽

Cited By ~ 10

Author(s):

T. Matsui ◽

H. Sugimoto ◽

K. Ohtsuka ◽

Y. Abe ◽

H. Ogata

Keyword(s):

Mass Transport ◽

Reactive Ion Etching ◽

Ion Etching ◽

Monolithically Integrated

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Reactive ion etching of GaAs and related materials for electro-optic and other devices

Vacuum ◽

10.1016/0042-207x(85)90374-4 ◽

1985 ◽

Vol 35 (10-11) ◽

pp. 504-506

Keyword(s):

Reactive Ion Etching ◽

Ion Etching ◽

Electro Optic

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An Assessment of Surface Treatments for Adhesion of Polyimide Thin Films

Polymers ◽

10.3390/polym13121955 ◽

2021 ◽

Vol 13 (12) ◽

pp. 1955

Author(s):

Marco Cen-Puc ◽

Andreas Schander ◽

Minerva G. Vargas Gleason ◽

Walter Lang

Keyword(s):

Flexible Electronics ◽

Oxygen Plasma ◽

Reactive Ion Etching ◽

Peel Test ◽

Scratch Test ◽

Peel Strength ◽

Surface Treatments ◽

Oxygen Plasma Treatment ◽

Polyimide Films ◽

Ion Etching

Polyimide films are currently of great interest for the development of flexible electronics and sensors. In order to ensure a proper integration with other materials and PI itself, some sort of surface modification is required. In this work, microwave oxygen plasma, reactive ion etching oxygen plasma, combination of KOH and HCl solutions, and polyethylenimine solution were used as surface treatments of PI films. Treatments were compared to find the best method to promote the adhesion between two polyimide films. The first selection of the treatment conditions for each method was based on changes in the contact angle with deionized water. Afterward, further qualitative (scratch test) and a quantitative adhesion assessment (peel test) were performed. Both scratch test and peel strength indicated that oxygen plasma treatment using reactive ion etching equipment is the most promising approach for promoting the adhesion between polyimide films.

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Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

Materials ◽

10.3390/ma14071595 ◽

2021 ◽

Vol 14 (7) ◽

pp. 1595

Author(s):

Nomin Lim ◽

Yeon Sik Choi ◽

Alexander Efremov ◽

Kwang-Ho Kwon

Keyword(s):

Gas Phase ◽

Photoelectron Spectroscopy ◽

Reactive Ion Etching ◽

Research Work ◽

Optical Emission ◽

Plasma Parameters ◽

Ion Etching ◽

Ar Plasma ◽

Ar Gas ◽

Etching Selectivity

This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etchant gas, it is interesting because of the liquid (at room temperature) nature and weaker environmental impact (lower global warming potential). The combination of several experimental techniques (double Langmuir probe, optical emission spectroscopy, X-ray photoelectron spectroscopy) allowed one (a) to compare performances of given gas systems in respect to the reactive-ion etching of Si and SiO2; and (b) to associate the features of corresponding etching kinetics with those for gas-phase plasma parameters. It was found that both gas systems exhibit (a) similar changes in ion energy flux and F atom flux with variations on input RF power and gas pressure; (b) quite close polymerization abilities; and (c) identical behaviors of Si and SiO2 etching rates, as determined by the neutral-flux-limited regime of ion-assisted chemical reaction. Principal features of C6F12O + Ar plasma are only lower absolute etching rates (mainly due to the lower density and flux of F atoms) as well as some limitations in SiO2/Si etching selectivity.

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