Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

2010 ◽  
Vol 54 (4) ◽  
pp. 763-767 ◽  
Author(s):  
Hu Guang-Xi ◽  
Wang Ling-Li ◽  
Liu Ran ◽  
Tang Ting-Ao ◽  
Qiu Zhi-Jun
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Quantum Mechanical ◽  
Mechanical Study ◽  
Surrounding Gate ◽  
Quantum Mechanical Study

Analytic potential and charge model for III-V surrounding gate metal-oxide-semiconductor field-effect transistors

2012 ◽  
Vol 112 (8) ◽  
pp. 084512 ◽  
Author(s):  
E. G. Marin ◽  
F. G. Ruiz ◽  
I. M. Tienda-Luna ◽  
A. Godoy ◽  
P. Sánchez-Moreno ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Charge Model ◽  
Surrounding Gate ◽  
Analytic Potential

Comment on “New Current–Voltage Model for Surrounding-Gate Metal Oxide Semiconductor Field-Effect Transistors”

2006 ◽  
Vol 45 (7) ◽  
pp. 6057-6057 ◽  
Author(s):  
D. Jiménez ◽  
B. Iñíguez ◽  
J. Suñé ◽  
L. F. Marsal ◽  
J. Pallarès ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Current Voltage ◽  
Surrounding Gate
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