High Quality A1N with a Thin Interlayer Grown on a Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy
2010 ◽
Vol 27
(6)
◽
pp. 068101
◽
Keyword(s):
Keyword(s):
2000 ◽
Vol 5
(S1)
◽
pp. 689-695
◽
2003 ◽
Vol 0
(7)
◽
pp. 2790-2793
◽
1992 ◽
Vol 7
(1A)
◽
pp. A249-A254
◽
THE STUDY OF Pd SCHOTTKY CONTACT ON POROUS GaN FOR UV METAL–SEMICONDUCTOR–METAL (MSM) PHOTODETECTORS
2007 ◽
Vol 16
(04)
◽
pp. 497-503
◽
2015 ◽
Vol 15
(5)
◽
pp. 2144-2150
◽