Oxygen diffusion in thin films studied from isothermal electric resistivity measurements

1998 ◽  
Vol 11 (8) ◽  
pp. 744-750 ◽  
Author(s):  
S Kittelberger ◽  
O M Stoll ◽  
R P Huebener
Keyword(s):  
Thin Films ◽  
Oxygen Diffusion ◽  
Electric Resistivity ◽  
Resistivity Measurements

Structural, optical and electrical properties of thermal evaporated nano sized In2Te3 thin films

2018 ◽  
Vol 1 (1) ◽  
pp. 21-25
Author(s):  
R Revathi ◽  
R Karunathan
Keyword(s):  
Thin Films ◽  
Negative Temperature Coefficient ◽  
Thermal Evaporation ◽  
Structural Parameters ◽  
Negative Temperature ◽  
Resistivity Measurements ◽  
Allowed Transition ◽  
Evaporation Technique ◽  
Indium Telluride ◽  
Made In

Indium Telluride thin films were prepared by thermal evaporation technique. Films were annealed at 573K under vacuum for an hour. Both as-deposited and annealed films were used for characterization. The structural parameters were discussed on the basis of annealing effect for a film of thickness 1500 Å. Optical analysis was carried out on films of different thicknesses for both as - deposited and annealed samples. Both the as- deposited and annealed films exhibit direct and allowed transition. Electrical resistivity measurements were made in the temperature range of 303-473 K using Four-probe method. The calculated resistivity value is of the order of 10-6 ohm meter. The activation energy value decreases with increasing film thickness. The negative temperature coefficient indicates the semiconducting nature of the film.

scholarly journals Reactive Sputtering of Magnesium Hydride Thin Films for Photovoltaic Applications

2009 ◽  
Vol 1210 ◽  
Author(s):  
Charlotte Platzer-Björkman ◽  
Trygve Mongstad ◽  
Smagul Zh. Karazhanov ◽  
Jan-Petter Maehlen ◽  
Erik Stensrud Marstein ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Passivation ◽  
Hydrogen Plasma ◽  
Reactive Sputtering ◽  
X Ray Diffraction ◽  
High Hydrogen ◽  
Hydrogen Flow ◽  
Resistivity Measurements ◽  
Photovoltaic Applications ◽  
Silicon Surface Passivation

AbstractDeposition of MgHx (MgH2 + Mg) thin films is performed using RF reactive sputtering in argon-hydrogen plasma. Films are characterized using x-ray diffraction (XRD), scanning electron microscopy, optical and resistivity measurements. Formation of crystalline MgH2 is confirmed by XRD, but the formation of some metallic Mg in the films could not be avoided. Increased H/Mg ratio by deposition at high hydrogen flow or high total pressure gives films that oxidize within days or weeks. Deposition at elevated substrate temperature results in improved crystallinity and stability. Initial studies of MgHx for silicon surface passivation are presented.

Room-temperature oxygen diffusion in a-axis normal YBa2Cu3Ox thin films

1995 ◽  
Vol 249 (3-4) ◽  
pp. 289-292 ◽  
Author(s):  
B. Pashmakov ◽  
K. Zhang ◽  
H.M. Jaeger ◽  
P. Tiwari ◽  
X.D. Wu
Keyword(s):  
Thin Films ◽  
Oxygen Diffusion ◽  
Room Temperature

Thermal annealing induced multiple phase in V/V2O5 alternating multilayer structure

2016 ◽  
Vol 30 (27) ◽  
pp. 1650210 ◽  
Author(s):  
B. Ilahi ◽  
M. Abdel-Rahman ◽  
Z. Zaaboub ◽  
M. F. Zia ◽  
M. Alduraibi ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Oxygen Diffusion ◽  
Multilayer Structure ◽  
Room Temperature ◽  
Optical And Electrical Properties ◽  
Film Resistance ◽  
Dc Magnetron Sputtering ◽  
Temperature Coefficient Of Resistance ◽  
Multiple Phase

In this paper, we report on microstructural, optical and electrical properties of alternating multilayer of vanadium pentoxide (V2O5), 25 nm, and vanadium (V), 5 nm, thin films deposited at room temperature by radio frequency (RF) and DC magnetron sputtering, respectively. Raman and photoluminescence (PL) spectroscopy have been employed to investigate the effects of thermal annealing for 20, 30 and 40 min at 400[Formula: see text]C in Nitrogen (N2) atmosphere on the multiple phase formation and its impact on the film resistance and temperature coefficient of resistance (TCR). We demonstrate that the oxygen free annealing environment allows the formation of multiple phases including V2O5, V6O[Formula: see text] and VO2 through oxygen diffusion and consequent deficiency in V2O5 layer.

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