Electron transport models with diffusion gradient and electric field, using the maximum anisotropic approximation

Electron transport in vacuum-deposited a-Se films with thicknesses varying from 13 to 501 μm has been investigated by conventional time-of-flight (TOF) and interrupted field TOF experiments. To separate the influences of electric field and the thickness, all TOF experiments were performed at a constant electric field. It has been found that the electron mobility is relatively constant in thick films (L > 50 μm) and increases in thinner films (L < 50 μm) with decreasing thickness. On the other hand, the electron lifetime is relatively thickness independent in films with thickness L > 50 μm, but drops sharply in thin films when L < 50 μm. These observations can be explained based on the density of states model that includes three types of traps forming Gaussian-like distributions within the mobility gap as reported in Koughia et al. (J. Appl. Phys. 97, 033706 (2005)).

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Electron Transport Models and Precision Measurements With the Constant Voltage Conductivity Method

IEEE Transactions on Plasma Science ◽

10.1109/tps.2013.2288366 ◽

2013 ◽

Vol 41 (12) ◽

pp. 3565-3576 ◽

Cited By ~ 4

Author(s):

Justin Dekany ◽

John Robert Dennison ◽

Alec M. Sim ◽

Jerilyn Brunson

Keyword(s):

Electron Transport ◽

Precision Measurements ◽

Constant Voltage ◽

Conductivity Method ◽

Transport Models

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Advantages of Semiconductor Device Simulator Combining Electromagnetic and Electron Transport Models

VLSI Design ◽

10.1155/1998/85608 ◽

1998 ◽

Vol 8 (1-4) ◽

pp. 495-500

Author(s):

S. M. Sohel Imtiaz ◽

Samir M. El-Ghazaly ◽

Robert O. Grondin

Keyword(s):

Wave Propagation ◽

Electromagnetic Wave ◽

Electron Transport ◽

Electromagnetic Wave Propagation ◽

Semiconductor Device ◽

Static Model ◽

Large Signal ◽

Transport Models ◽

High Frequencies ◽

Electromagnetic Model

Physical simulation of semiconductor devices at high frequencies involves not only semiconductor transport issues but also electromagnetic wave propagation issues. In order to obtain the nonlinear and the large-signal characteristics of the semiconductor devices, an electromagnetic model should replace the traditional quasi-static model in the device simulator. In this paper, the advantages of a semiconductor device simulator combining an electromagnetic and an electron transport models are presented. This study is based on a semiconductor device simulator that couples a semiconductor model to the 3D time-domain solution of Maxwell's equations. The electromagnetic wave propagation effects on the millimeter-wave FETs are thoroughly analyzed. The use of the electromagnetic model over the conventional quasi-static model provides the actual device response at high frequencies. It also shows the nonlinear energy build-up along the device width whereas the quasi-static model provides a linear increase of energy. The combined model is capable of predicting the device nonlinearity and harmonic distortion of amplifier circuits at large signal.

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