Electronic structure and scanning tunnelling microscope images of missing-atom defects on and surfaces

1997 ◽  
Vol 9 (18) ◽  
pp. 3671-3686 ◽  
Author(s):  
J C Caulfield ◽  
A J Fisher
Nanoscale ◽  
2021 ◽  
Author(s):  
Tuhin Shuvra Basu ◽  
Simon Diesch ◽  
Ryoma Hayakawa ◽  
Yutaka Wakayama ◽  
Elke Scheer

We examined the modified electronic structure and single-carrier transport of individual hybrid core–shell metal–semiconductor Au-ZnS quantum dots using a scanning tunnelling microscope.


1989 ◽  
Vol 159 ◽  
Author(s):  
John D. Todd ◽  
John B. Pethica

ABSTRACTScanning tunnelling microscope images of layered materials in a non-uhv environment exhibit various anomalous phenomena, including enhanced corrugation heights, periodicity over large areas and a marked absence of point defects. We have modified a precision indentation device to allow STM rastering of a tip across a surface, while simultaneously monitoring mechanical contact. Images we have obtained from this apparatus on an HOPG sample exhibit atomic scale resolution with contact areas much larger than a single atom. Contrast in the image results from periodic conductance fluctuations as the layers of the sample undergo shear in the region of the tip. We provide a model for this process, which explains a variety of curious, and otherwise unrelated phenomena occurring during STM imaging of these materials.


Nanoscale ◽  
2021 ◽  
Author(s):  
Maxwell T West ◽  
Muhammad Usman

Theoretical understanding of scanning tunnelling microscope (STM) measurements involve electronic structure details of the STM tip and the sample being measured. Conventionally, the focus has been on the accuracy of...


Nanoscale ◽  
2017 ◽  
Vol 9 (43) ◽  
pp. 17013-17019 ◽  
Author(s):  
Muhammad Usman ◽  
Benoit Voisin ◽  
Joe Salfi ◽  
Sven Rogge ◽  
Lloyd C. L. Hollenberg

High-precision physics modeling at the atomic scale indicates potential for direct observation of central-cell-effects in scanning tunnelling microscope images of single dopant wave functions.


Author(s):  
W.K. Lo ◽  
J.C.H. Spence

An improved design for a combination Scanning Tunnelling Microscope/TEM specimen holder is presented. It is based on earlier versions which have been used to test the usefulness of such a device. As with the earlier versions, this holder is meant to replace the standard double-tilt specimen holder of an unmodified Philips 400T TEM. It allows the sample to be imaged simultaneously by both the STM and the TEM when the TEM is operated in the reflection mode (see figure 1).The resolution of a STM is determined by its tip radii as well as its stability. This places strict limitations on the mechanical stability of the tip with respect to the sample. In this STM the piezoelectric tube scanner is rigidly mounted inside the endcap of the STM holder. The tip coarse approach to the sample (z-direction) is provided by an Inchworm which is located outside the TEM vacuum.


2018 ◽  
Author(s):  
Gaolei Zhan ◽  
Younes Makoudi ◽  
Judicael Jeannoutot ◽  
Simon Lamare ◽  
Michel Féron ◽  
...  

Over the past decade, on-surface fabrication of organic nanostructures has been widely investigated for the development of molecular electronic devices, nanomachines, and new materials. Here, we introduce a new strategy to obtain alkyl oligomers in a controlled manner using on-surface radical oligomerisations that are triggered by the electrons/holes between the sample surface and the tip of a scanning tunnelling microscope. The resulting radical-mediated mechanism is substantiated by a detailed theoretical study. This electron transfer event only occurs when <i>V</i><sub>s</sub> < -3 V or <i>V</i><sub>s</sub> > + 3 V and allows access to reactive radical species under exceptionally mild conditions. This transfer can effectively ‘switch on’ a sequence leading to formation of oligomers of defined size distribution due to the on-surface confinement of reactive species. Our approach enables new ways to initiate and control radical oligomerisations with tunnelling electrons, leading to molecularly precise nanofabrication.


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