The size dependence of tin oxide atomic cluster nanowire field effect transistors
Fabrication and characterisation of transparent-gate field effect transistors using indium tin oxide
1996 ◽
Vol 143
(1)
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pp. 7-11
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2011 ◽
Vol 42
(1)
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pp. 1212-1214
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2011 ◽
Vol 208
(12)
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pp. 2920-2925
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2014 ◽
Vol 32
(1)
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pp. 011202
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2009 ◽
Vol 131
(31)
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pp. 10826-10827
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Keyword(s):
Keyword(s):
2011 ◽
Vol 3
(7)
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pp. 2522-2528
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