scholarly journals Unveiling a critical thickness in photocatalytic TiO2 thin films grown by plasma-enhanced chemical vapor deposition using real time in situ spectroscopic ellipsometry

2021 ◽  
Vol 54 (44) ◽  
pp. 445303
Author(s):  
W Ravisy ◽  
M Richard-Plouet ◽  
B Dey ◽  
S Bulou ◽  
P Choquet ◽  
...  
1999 ◽  
Vol 38 (Part 2, No. 6A/B) ◽  
pp. L632-L635 ◽  
Author(s):  
Shuu'ichirou Yamamoto ◽  
Satoshi Sugai ◽  
Yasunari Matsukawa ◽  
Akio Sengoku ◽  
Hiroshi Tobisaka ◽  
...  

2017 ◽  
Vol 23 (S1) ◽  
pp. 1716-1717 ◽  
Author(s):  
Kimberly Dick Thelander ◽  
L. Reine Wallenberg ◽  
Axel R. Persson ◽  
Marcus Tornberg ◽  
Daniel Jacobsson ◽  
...  

1991 ◽  
Vol 6 (9) ◽  
pp. 1913-1918 ◽  
Author(s):  
Jiong-Ping Lu ◽  
Rishi Raj

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.


2006 ◽  
Vol 500 (1-2) ◽  
pp. 19-26 ◽  
Author(s):  
F. Gracia ◽  
F. Yubero ◽  
J.P. Holgado ◽  
J.P. Espinos ◽  
A.R. Gonzalez-Elipe ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document