Edge defects inducing the asymmetric transverse domain walls created in Ni80Fe20 nanowires

Author(s):  
Duc-Quang HOANG ◽  
Xuan-Huu CAO

Abstract Polycrystalline permalloy nanowires with different widths were studied by means of a Lorentz microscope associated with micro-magnetic simulations. Each nanowire was designed to create a single head-to-head transverse domain wall. Edge defects at the long edges of those nanowires were incrementally controlled. Therein, a single pixel at different positions along the nanowire edges was removed. The horizontal nanowires were rotated with different angles, i.e. +/-5o, +/-10o, +/-30o and +/-45o, to produce a certain level of the edge roughness. Some curved nanowires with different widths were also designed, simulated and patterned. Lorentz images of those curved nanowires were recorded. The asymmetric levels of such created walls were measured and correlated to our wall phase diagram. The obtained results showed that the edge defects created along either side of a nanowire strongly induces the asymmetric level of a transverse domain wall.

Author(s):  
J.N. Chapman ◽  
P.E. Batson ◽  
E.M. Waddell ◽  
R.P. Ferrier

By far the most commonly used mode of Lorentz microscopy in the examination of ferromagnetic thin films is the Fresnel or defocus mode. Use of this mode in the conventional transmission electron microscope (CTEM) is straightforward and immediately reveals the existence of all domain walls present. However, if such quantitative information as the domain wall profile is required, the technique suffers from several disadvantages. These include the inability to directly observe fine image detail on the viewing screen because of the stringent illumination coherence requirements, the difficulty of accurately translating part of a photographic plate into quantitative electron intensity data, and, perhaps most severe, the difficulty of interpreting this data. One solution to the first-named problem is to use a CTEM equipped with a field emission gun (FEG) (Inoue, Harada and Yamamoto 1977) whilst a second is to use the equivalent mode of image formation in a scanning transmission electron microscope (STEM) (Chapman, Batson, Waddell, Ferrier and Craven 1977), a technique which largely overcomes the second-named problem as well.


Author(s):  
Wenwu Cao

Domain structures play a key role in determining the physical properties of ferroelectric materials. The formation of these ferroelectric domains and domain walls are determined by the intrinsic nonlinearity and the nonlocal coupling of the polarization. Analogous to soliton excitations, domain walls can have high mobility when the domain wall energy is high. The domain wall can be describes by a continuum theory owning to the long range nature of the dipole-dipole interactions in ferroelectrics. The simplest form for the Landau energy is the so called ϕ model which can be used to describe a second order phase transition from a cubic prototype,where Pi (i =1, 2, 3) are the components of polarization vector, α's are the linear and nonlinear dielectric constants. In order to take into account the nonlocal coupling, a gradient energy should be included, for cubic symmetry the gradient energy is given by,


1990 ◽  
Vol 111 (1) ◽  
pp. 111-115 ◽  
Author(s):  
A. A. Bulbich ◽  
P. E. Pumpjan
Keyword(s):  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
S. Ghara ◽  
K. Geirhos ◽  
L. Kuerten ◽  
P. Lunkenheimer ◽  
V. Tsurkan ◽  
...  

AbstractAtomically sharp domain walls in ferroelectrics are considered as an ideal platform to realize easy-to-reconfigure nanoelectronic building blocks, created, manipulated and erased by external fields. However, conductive domain walls have been exclusively observed in oxides, where domain wall mobility and conductivity is largely influenced by stoichiometry and defects. Here, we report on giant conductivity of domain walls in the non-oxide ferroelectric GaV4S8. We observe conductive domain walls forming in zig-zagging structures, that are composed of head-to-head and tail-to-tail domain wall segments alternating on the nanoscale. Remarkably, both types of segments possess high conductivity, unimaginable in oxide ferroelectrics. These effectively 2D domain walls, dominating the 3D conductance, can be mobilized by magnetic fields, triggering abrupt conductance changes as large as eight orders of magnitude. These unique properties demonstrate that non-oxide ferroelectrics can be the source of novel phenomena beyond the realm of oxide electronics.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Łukasz Frąckowiak ◽  
Feliks Stobiecki ◽  
Gabriel David Chaves-O’Flynn ◽  
Maciej Urbaniak ◽  
Marek Schmidt ◽  
...  

AbstractRecent results showed that the ferrimagnetic compensation point and other characteristic features of Tb/Co ferrimagnetic multilayers can be tailored by He+ ion bombardment. With appropriate choices of the He+ ion dose, we prepared two types of lattices composed of squares with either Tb or Co domination. The magnetization reversal of the first lattice is similar to that seen in ferromagnetic heterostructures consisting of areas with different switching fields. However, in the second lattice, the creation of domains without accompanying domain walls is possible. These domain patterns are particularly stable because they simultaneously lower the demagnetizing energy and the energy associated with the presence of domain walls (exchange and anisotropy). For both lattices, studies of magnetization reversal show that this process takes place by the propagation of the domain walls. If they are not present at the onset, the reversal starts from the nucleation of reversed domains and it is followed by domain wall propagation. The magnetization reversal process does not depend significantly on the relative sign of the effective magnetization in areas separated by domain walls.


2021 ◽  
Vol 2021 (3) ◽  
Author(s):  
Diego Delmastro ◽  
Jaume Gomis

Abstract 4d$$ \mathcal{N} $$ N = 1 super Yang-Mills (SYM) with simply connected gauge group G has h gapped vacua arising from the spontaneously broken discrete R-symmetry, where h is the dual Coxeter number of G. Therefore, the theory admits stable domain walls interpolating between any two vacua, but it is a nonperturbative problem to determine the low energy theory on the domain wall. We put forward an explicit answer to this question for all the domain walls for G = SU(N), Sp(N), Spin(N) and G2, and for the minimal domain wall connecting neighboring vacua for arbitrary G. We propose that the domain wall theories support specific nontrivial topological quantum field theories (TQFTs), which include the Chern-Simons theory proposed long ago by Acharya-Vafa for SU(N). We provide nontrivial evidence for our proposals by exactly matching renormalization group invariant partition functions twisted by global symmetries of SYM computed in the ultraviolet with those computed in our proposed infrared TQFTs. A crucial element in this matching is constructing the Hilbert space of spin TQFTs, that is, theories that depend on the spin structure of spacetime and admit fermionic states — a subject we delve into in some detail.


2015 ◽  
Vol 233-234 ◽  
pp. 55-59
Author(s):  
Marina Kirman ◽  
Artem Talantsev ◽  
Roman Morgunov

The magnetization dynamics of metal-organic crystals has been studied in low frequency AC magnetic field. Four modes of domain wall motion (Debye relaxation, creep, slide and over - barrier motion (switching)) were distinguished in [MnII(H(R/S)-pn)(H2O)] [MnIII(CN)6]⋅2H2O crystals. Debye relaxation and creep of the domain walls are sensitive to Peierls relief configuration controlled by crystal lattice chirality. Structural defects and periodical Peierls potential compete in the damping of the domain walls. Driving factor of this competition is ratio of the domain wall width to the crystal lattice parameter.


2018 ◽  
Vol 191 ◽  
pp. 08004
Author(s):  
A.D. Dolgov ◽  
S.I. Godunov ◽  
A.S. Rudenko

We study the evolution of thick domain walls in the expanding universe. We have found that the domain wall evolution crucially depends on the time-dependent parameter C(t) = 1/(H(t)δ0)2, where H(t) is the Hubble parameter and δ0 is the width of the wall in flat space-time. For C(t) > 2 the physical width of the wall, a(t)δ(t), tends with time to constant value δ0, which is microscopically small. Otherwise, when C(t) ≤ 2, the wall steadily expands and can grow up to a cosmologically large size.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Guidobeth Sáez ◽  
Pablo Díaz ◽  
Eduardo Cisternas ◽  
Eugenio E. Vogel ◽  
Juan Escrig

AbstractA long piece of magnetic material shaped as a central cylindrical wire (diameter $$d=50$$ d = 50 nm) with two wider coaxial cylindrical portions (diameter $$D=90$$ D = 90 nm and thickness $$t=100$$ t = 100 nm) defines a bimodulated nanowire. Micromagnetism is invoked to study the equilibrium energy of the system under the variations of the positions of the modulations along the wire. The system can be thought of as composed of five independent elements (3 segments and 2 modulations) leading to $$2^5=32$$ 2 5 = 32 possible different magnetic configurations, which will be later simplified to 4. We investigate the stability of the configurations depending on the positions of the modulations. The relative chirality of the modulations has negligible contributions to the energy and they have no effect on the stability of the stored configuration. However, the modulations are extremely important in pinning the domain walls that lead to consider each segment as independent from the rest. A phase diagram reporting the stability of the inscribed magnetic configurations is produced. The stability of the system was then tested under the action of external magnetic fields and it was found that more than 50 mT are necessary to alter the inscribed information. The main purpose of this paper is to find whether a prototype like this can be complemented to be used as a magnetic key or to store information in the form of firmware. Present results indicate that both possibilities are feasible.


2021 ◽  
Author(s):  
Jing Wang ◽  
Jing Ma ◽  
Houbing Huang ◽  
Ji Ma ◽  
Hasnain Jafri ◽  
...  

Abstract The electronic conductivities of ferroelectric domain walls have been extensively explored over the past decade for potential nanoelectronic applications. However, the realization of logic devices based on ferroelectric domain walls requires reliable and flexible control of the domain-wall configuration and conduction path. Here, we demonstrate electric-field-controlled stable and repeatable on-and-off switching of conductive domain walls within topologically confined vertex domains naturally formed in self-assembled ferroelectric nano-islands. Using a combination of piezoresponse force microscopy, conductive atomic force microscopy, and phase-field simulations, we show that on-off switching is accomplished through reversible transformations between charged and neutral domain walls via electric-field-controlled domain-wall reconfiguration. By analogy to logic processing, we propose programmable logic gates (such as NOT, OR, AND and their derivatives) and logic circuits (such as fan-out) based on reconfigurable conductive domain walls. Our work provides a potentially viable platform for programmable all-electric logic based on a ferroelectric domain-wall network with low energy consumption.


Sign in / Sign up

Export Citation Format

Share Document