Measurement-based extrapolation of spectral responsivity by using a low-NEP pyroelectric detector

2021 ◽  
Author(s):  
Seongchong Park ◽  
Dong-Hoon Lee ◽  
Kee Suk Hong
Keyword(s):  
Spectral Response ◽  
Previous Method ◽  
Pyroelectric Detector ◽  
Spectral Responsivity ◽  
Current Output ◽  
Experimental Procedure ◽  
Trap Detector ◽  
Minimum Uncertainty ◽  
Lock In ◽  
Dc Current

Abstract In case the primary realization of the spectral responsivity scale is not conducted at all target wavelengths but at only a small part of them, one needs to extrapolate values at the specific wavelengths to an extended range. In this work, we present a fully experimental procedure to extrapolate a single value of spectral responsivity at 633 nm into the whole working wavelength range (250 – 1100) nm of Si photodiodes. It is based on spectral responsivity comparison between a Si trap detector and a low-NEP pyroelectric detector of nearly flat spectral response. For this purpose, we developed a setup specialized to compare a Si-trap detector of dc-current output with a pyroelectric detector of ac-voltage output by using a modulated probing light source and a monitoring technique. To keep the probing light chopped even for the dc-photocurrent readout, we adopted a low chopping frequency of 4 Hz and a triggered readout for the Si-trap detector, which leads to a speedy comparison between the Si-trap detector and the pyroelectric detector. For the reference pyroelectric detector, we characterized the spectral absorptivity of the black-coating and the nonlinearity of the lock-in amplifier readout. Compiling all the required information, the spectral responsivity of the Si trap detector could be measured with the minimum uncertainty of 0.3 % (k = 2), which was validated by comparing with that of our previous method based on a numerical extrapolation.

Current Induced Spin Injection in Si-MOSFET

2012 ◽  
Vol 190 ◽  
pp. 129-132
Author(s):  
I. Shlimak ◽  
A. Butenko ◽  
D.I. Golosov ◽  
K.J. Friedland ◽  
S.V. Kravchenko
Keyword(s):  
Magnetic Fields ◽  
Spin Injection ◽  
Dynamic Resistance ◽  
Experimental Scheme ◽  
Ac Current ◽  
Sample Resistance ◽  
Pass Through ◽  
Lock In ◽  
Dc Current ◽  
Parallel Magnetic Fields

Longitudinal resistivity in strong parallel magnetic fields up to B = 14 Tesla was measured in Si-MOSFET with a narrow slot (90nm) in the upper metallic gate that allows to apply different gate voltage across the slot and, therefore, to control the electron density n1 and n2 in two parts of the sample independently. The experimental scheme allows us to pass through the source-drain channel relatively large DC current (IDC), while the dynamic resistance was measured using a standard lock-in technique with small AC current. It was shown that the sample resistance is asymmetric with respect to the direction of DC current. The asymmetry increases with increase of magnetic field, DC current, and difference between n1 and n2. Results are interpreted in terms of a current-induced spin accumulation or depletion near the slot, as described by a spin drift-diffusion equation. The effect on the sample resistance is due to the positive magnetoresistance of Si-MOSFETs in parallel magnetic fields.

scholarly journals Optical power scale realization using the predictable quantum efficient detector

2022 ◽  
Vol 2149 (1) ◽  
pp. 012006
Author(s):  
Kinza Maham ◽  
Petri Kärhä ◽  
Farshid Manoocheri ◽  
Erkki Ikonen
Keyword(s):  
Laser Power ◽  
Primary Standard ◽  
Optical Power ◽  
Spectral Responsivity ◽  
Expanded Uncertainty ◽  
Working Standard ◽  
Cryogenic Radiometer ◽  
Trap Detector ◽  
Measurement Results ◽  
Power Scale

Abstract We report realization of scales for optical power of lasers and spectral responsivity of laser power detectors based on a predictable quantum efficient detector (PQED) over the spectral range of 400 nm–800 nm. The PQED is characterized and used to measure optical power of a laser that is further used in calibration of the responsivities of a working standard trap detector at four distinct laser lines, with an expanded uncertainty of about 0.05%. We present a comparison of responsivities calibrated against the PQED at Aalto and the cryogenic radiometer at RISE, Sweden. The measurement results support the concept that the PQED can be used as a primary standard of optical power.

scholarly journals Uniformity and Performance Characterization of GaN p-i-n Photodetectors Fabricated from 3-Inch Epitaxy

1999 ◽  
Vol 4 (S1) ◽  
pp. 805-810
Author(s):  
R. Hickman ◽  
J. J. Klaassen ◽  
J. M. Van Hove ◽  
A. M. Wowchak ◽  
C. Polley ◽  
...  
Keyword(s):  
Spectral Response ◽  
Large Diameter ◽  
Nitrogen Plasma ◽  
Spectral Responsivity ◽  
Large Area ◽  
Shunt Resistance ◽  
Group Iii ◽  
Sapphire Substrates ◽  
And Performance ◽  
Group Iii Nitride

Gallium nitride wafer epitaxy on large diameter substrates is critical for the future fabrication of large area UV linear or 2D imaging arrays, as well as for the economical production of other GaN-based devices. Typical group III-nitride deposition is now performed on 2-inch diameter or smaller sapphire substrates. Reported here are visible blind, UV GaN p-i-n photodetectors which have been fabricated on 3-inch diameter (0001) sapphire substrates by RF atomic nitrogen plasma MBE. The uniformity across the wafer of spectral responsivity and shunt resistance (R0) for the p-i-n photodetectors has been characterized. Spectral responsivity and 1/f noise as a function of temperature exceeding 250°C will be presented for the GaN p-i-n photodetectors. Spectral response with >0.17 A/W at peak wavelength and having 4-6 orders of magnitude visible rejection has been achieved. 1/f noise typically less than 10−14 A/Hz1/2 at room temperature also has been achieved with GaN p-i-n photodiodes. The results have been correlated with proposed models for dark current and 1/f noise in GaN diodes.

Absolute spectral responsivity of silicon trap detector based on absolute cryogenic radiometer

2015 ◽  
Author(s):  
Xueshun Shi ◽  
Changming Liu ◽  
Yulong Liu ◽  
Lechen Yang ◽  
Kun Zhao ◽  
...  
Keyword(s):  
Spectral Responsivity ◽  
Cryogenic Radiometer ◽  
Trap Detector

Spectral responsivity measurement of photovoltaic detectors by comparison with a pyroelectric detector on individual nano-second laser pulses

Metrologia ◽  
2017 ◽  
Vol 54 (3) ◽  
pp. 355-364
Author(s):  
Kee-Suk Hong ◽  
Seongchong Park ◽  
Jisoo Hwang ◽  
Errol Atkinson ◽  
Peter Manson ◽  
...  
Keyword(s):  
Laser Pulses ◽  
Pyroelectric Detector ◽  
Spectral Responsivity ◽  
Photovoltaic Detectors

Thin Film Reflectance Model for Trap Detector

2021 ◽  
Author(s):  
Brian H.T. Lee ◽  
◽  
Brenda H.S. Lam ◽  
C.M. Tsui
Keyword(s):  
Thin Film ◽  
Spectral Reflectance ◽  
Internal Quantum Efficiency ◽  
Oxide Thickness ◽  
Thickness Variation ◽  
Spectral Responsivity ◽  
Silicon Photodiode ◽  
Measurement Models ◽  
Trap Detector ◽  
Reflectance Model

The physical model of the spectral responsivity of trap detector consists of multiple parameters such as the internal quantum efficiency and the spectral reflectance. In some measurement models, the spectral reflectance of the trap detector is approximated by fitting a wavelength dependence equation which does not consider the effect of the oxide thickness of the silicon photodiode. To analyse the uncertainty due to the oxide thickness variation, a thin film reflectance model is set up in the Standards and Calibration Laboratory (SCL) for the evaluation of the spectral reflectance of the trap detectors. The model is based on the Fresnel coefficients of a 3-layer thin film structure which consists of air and a thin film oxide layer on a silicon substrate. The reflectance model was implemented as user-defined functions to calculate the spectral reflectance at different oxide thickness. It was also integrated with the SCL’s MCM program to evaluate the uncertainty of the spectral responsivity of trap detectors.

scholarly journals Band gap Measurement of P – type Monocrystalline Silicon Wafer

2018 ◽  
Vol 53 (3) ◽  
pp. 179-184
Author(s):  
G Hashmi ◽  
MK Basher ◽  
M Hoq ◽  
MH Rahman
Keyword(s):  
Band Gap ◽  
Silicon Wafer ◽  
Spectral Response ◽  
Monocrystalline Silicon ◽  
Experimental Result ◽  
Einstein Relation ◽  
Response Measurement ◽  
Gap Measurement ◽  
P Type ◽  
Lock In

Band gap of P-type monocrystalline silicon wafer has been measured using spectral response measurement system. To see the spectral response a SR510 lock in amplifier, SR540 optical chopper, monochromator (400nm-1200nm), optical detector and lab view software has been used. From spectral response of polished P-type monocrystalline silicon wafer absorption, reflection and transmission has been respectively seen from 400nm-550nm, 550nm-1050nm and 1050-1200nm. Assuming band gap of silicon is (1.12eV), this result has been theoretically verified using Planck–Einstein relation. Moreover, theoretical band gap of silicon has been calculated (1.127362 eV). The band gap measurement process uses partial concept of Tauc’s downhill negative slop and Planck–Einstein relation. Experimental result shows that, the band gap of silicon is 1.127907 eV.Bangladesh J. Sci. Ind. Res.53(3), 179-184, 2018

Measurement of low light flux

2017 ◽  
Author(s):  
A. G. Wright
Keyword(s):  
Time Allocation ◽  
Photon Counting ◽  
Light Flux ◽  
Optimal Time ◽  
Signal Recovery ◽  
Noise Power ◽  
Low Light ◽  
Background Measurement ◽  
Lock In ◽  
Dc Current

There are three experimental methods for quantifying the flux of light incident on a photocathode: counting the anode output pulses initiated by photoelectrons—known as photon counting; measuring the DC current flowing at the anode—referred to as analogue detection, or charge integration; and determining the rms noise in the anode current—known as shot noise power detection. The statistical performances of the three methods, based on weighting factors, are compared, revealing the theoretical superiority of the photon-counting method. Optimal time allocation between signal and background measurement is derived for photon counting. An amplifier discriminator is the simplest and preferred instrumentation for photon counting, but setting the optimal counting threshold is ultimately a matter of judgement. This is because the plateau has a different slope for signal, background, and afterpulses. Rudiments of signal recovery instrumentation covering boxcar integrators, lock-in detection, and synchronous signal averaging are given.

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