Hysteresis-free MoS2 metal semiconductor field-effect transistors with van der Waals Schottky junction

2021 ◽  
Vol 32 (13) ◽  
pp. 135201
Author(s):  
Da Wan ◽  
Qixia Wang ◽  
Hao Huang ◽  
Bei Jiang ◽  
Chen Chen ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Schottky Junction

Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure

ACS Nano ◽  
2018 ◽  
Vol 12 (7) ◽  
pp. 6700-6705 ◽  
Author(s):  
Mengwei Si ◽  
Pai-Ying Liao ◽  
Gang Qiu ◽  
Yuqin Duan ◽  
Peide D. Ye
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Van Der Waals Heterostructure

Tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures

2019 ◽  
Vol 21 (42) ◽  
pp. 23611-23619 ◽  
Author(s):  
Xinming Qin ◽  
Wei Hu ◽  
Jinlong Yang
Keyword(s):  
Electric Field ◽  
Field Effect ◽  
Ohmic Contacts ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Interlayer Coupling ◽  
Van Der Waals Heterostructures ◽  
Potential Applications

Electric field and interlayer coupling tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures have been predicted theoretically to expect potential applications in graphene-based field-effect transistors.

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